Massachusetts Institute of Technology

Dartmouth College

Other

Solar-tectic LLC

Laxense Inc.

Jifeng Liu

Lionel Cooper Kimerling

Xiaoxin Wang

Jurgen Michel

Dong Pan

Zhiyuan Wang

Eric R Fossum

Kazumi Wada

Donghwan Ahn

Jonathan T Bessette

Douglas D Cannon

Rodolfo E Camacho-Aguilera

Yan Cai

Yasuhiko Ishikawa

Troy O McBride

Praveen Chaudhari

Jiaju Ma

Juejun Hu

Chee Wei Wong

Tian Gu

Xiaochen Sun

John A Yasaitis

Joel Stettenheim

Xia Zhou

Shudong Jiang

Sajan Saini

James F McMillan

Oliver J Brambles

Eldred Lee

Charles J Carver, Jr

Can Xu

Nicholas R Shade

Michael D Sockin

Andrew Wong

A selectively-absorbing material includes a silicone polymer and transition-metal oxide nanoparticles dispersed therein. Each of the transition-metal oxide nanoparticles includes manganese. A solar receiver includes (i) a metal substrate including an etched surface having a microroughness between 0.05 micrometers and two micrometers; (ii) a polymer matrix disposed on the etched surface; and (iii) transition-metal oxide nanoparticles dispersed within the polymer matrix. A method for producing transition-metal oxide nanoparticles includes recrystallizing a plurality of two-element nanoparticles at a temperature between 300 and 700° C. The plurality of two-element nanoparticles includes at least two of (i) copper oxide nanoparticles, (ii) manganese oxide nanoparticles, and (iii) iron oxide nanoparticles. A method for fabricating a selective-absorber includes etching a top surface of a metal substrate; depositing a polymer-matrix composite on the etched top surface; and interdiffusing the polymer-matrix composite and the metal substrate. The polymer-matrix composite includes transition-metal oxide nanoparticles dispersed therein.

Solar receiver, selectively absorbing material, and associated fabrication methods

A phosphor excitable by X-ray and blue-light emits light in the near-infrared (NIR-II, 1000-1700 nanometers) forms nanoparticles less than 200 nanometers diameter. The nanoparticles are tagged by coating with silica, then conjugating with polyethylene glycol (PEG) and tissue-selective compounds such as antibodies, nucleic acid chains, and other ligands. In embodiments, we administer the tagged nanoparticles to a subject, then localize the nanoparticles, and thus antigen-bearing tissues, by irradiating the subject with X-ray or other radiation beams while imaging near infrared light emitted from the subject. The nanoparticles are made by mixing 1-50 micron calcium oxide and germanium oxide powders with dilute nitric acid, adding chromium (III) nitrate at a ratio to germanium between 0.001 and 0.1, adding tartaric acid solution with molar ratio to metal ions between 1˜10, and adjusting pH to 0.1-4 with nitric acid, then later heating to form a sol, oven drying, and calcinating the sol.

Medical imaging technique using X-ray to near-infrared downconverting nanopowder

A speckle-suppressing lighting system includes an optical waveguide, a first solid-state light source, a second solid-state light source, and a diffuser. The optical waveguide has a proximal end and a distal end. At least part of the diffuser is between the proximal end and the distal end. The first solid-state light source is optically coupled to the optical waveguide near the proximal end, and emits a first light beam that propagates toward the distal end and has a first center wavelength. The second solid-state light source is optically coupled to the optical waveguide near the proximal end, and emits a second light beam that propagates toward the distal end and has a second center wavelength differing from the first center wavelength. The diffuser diffuses the first light beam and the second light beam.

Speckle-suppressing lighting system

Disclosed are infrared (IR) light detectors. The detectors operate by generating hot electrons in a metallic absorber layer on photon absorption, the electrons being transported through an energy barrier of an insulating layer to a metal or semiconductor conductive layer. The energy barrier is set to bar response to wavelengths longer than a maximum wavelength. Particular embodiments also have a pattern of metallic shapes above the metallic absorber layer that act to increase photon absorption while reflecting photons of short wavelengths; these particular embodiments have a band-pass response.

Nanophotonic hot-electron devices for infrared light detection

Some embodiments of the present disclosure provide a semiconductor-based photon-counting sensor comprising a metal-insulator-semiconductor internal photoemission (e.g., thermionic-emission) detector formed on and/or in a first surface of a semiconductor substrate, and at least one jot formed on and/or in a second side of a semiconductor substrate. The at least one MIS photoemission detector and the at least one jot are configured such that a photocarrier generated in response to a photon incident on the MIS thermionic-emission detector is readout by the at least one jot.

UV/VIS/IR backside-illuminated photon-counting sensor

In a method for electrically doping a semiconducting material, a layer of germanium is formed having a germanium layer thickness, while in situ incorporating phosphorus dopant atoms at a concentration of at least about 5&#xd7;10cmthrough the thickness of the germanium layer during formation of the germanium layer. Additional phosphorus dopant atoms are ex situ incorporated through the thickness of the germanium layer, after formation of the germanium layer, to produce through the germanium layer thickness a total phosphorus dopant concentration of at least about 2&#xd7;10cm.

Method for high-concentration doping of germanium with phosphorous

An optical interconnect system has first and second waveguides each with wedge-shaped cross-section at a first end, disposed over an optical modulator. The optical modulator is a surface-plasmon multi quantum well (SP-MQW) modulator, the first waveguide an input waveguide and the second waveguide configured an output waveguide. In embodiments the SP-MQW modulator has multiple semiconductor layers disposed atop a lower metal layer between 10 and 300 nanometers thick and configured such that incident light is reflected at the lower metal layer unless a voltage is applied to the semiconductor layers, when incident light is coupled into a surface plasmon mode in the lower metal layer.

Method and apparatus of surface-incident, plasmon-enhanced multiple quantum well modulators and optical coupling thereon

A transparent conductive oxide (TCO) material includes a metal-rich metal oxide having an average formula (M1, M2 . . . Mn)O, where M1, M2 and Mn are the same metal or different metals and a molar ratio of y:x is selected from a range of 0.1 to 20. A method of making a metal-rich metal oxide material includes co-depositing a metal and a stoichiometric metal oxide and annealing the deposited material above 100&#xb0; C. In an embodiment, a thin-film solar cell, includes an electrode, a transparent conductive oxide (TCO) disposed on the electrode, a solar absorbing layer disposed on the TCO, and a metal-rich metal oxide disposed on the solar absorbing layer. A method of fabricating a thin-film solar cell is also disclosed.

Multifunctional nanostructured metal-rich metal oxides

In a method of forming a photonic device, a first silicon electrode is formed, and then a germanium active layer is formed on the first silicon electrode while including n-type dopant atoms in the germanium layer, during formation of the layer, to produce a background electrical dopant concentration that is greater than an intrinsic dopant concentration of germanium. A second silicon electrode is then formed on a surface of the germanium active layer. The formed germanium active layer is doped with additional dopant for supporting an electrically-pumped guided mode as a laser gain medium with an electrically-activated n-type electrical dopant concentration that is greater than the background dopant concentration to overcome electrical losses of the photonic device.

High-concentration active doping in semiconductors and semiconductor devices produced by such doping

A tubular heat-absorbing element partly enclosed in an insulating layer or jacket, has absorbing surface that is accessible to solar radiation. The thermal insulation is designed to provide entry to solar radiation by way of a cavity. The absorbing surface can be substantially planar.

Cavity receivers for parabolic solar troughs

A method for forming single crystal or large-crystal-grain thin-film layers deposits a thin-film amorphous, nanocrystalline, microcrystalline, or polycrystalline layer, and laser-heats a seed spot having size on the order of a critical nucleation size of the thin-film layer. The single-crystal seed spot is extended into a single-crystal seed line by laser-heating one or more crystallization zones adjacent to the seed spot and drawing the zone across the thin-film layer. The single-crystal seed line is extended across the thin-film material layer into a single-crystal layer by laser-heating an adjacent linear crystallization zone and drawing the crystallization zone across the thin-film layer. Photovoltaic cells may be formed in or on the single-crystal layer. Tandem photovoltaic devices may be formed using one or several iterations of the method. The method may also be used to form single-crystal semiconductor thin-film transistors, such as for display devices, or to form single-crystal superconductor layers.

Method of forming single-crystal semiconductor layers and photovaltaic cell thereon

Inexpensive semiconductors are produced by depositing a single crystal or large grained silicon on an inexpensive substrate. These semiconductors are produced at low enough temperatures such as temperatures below the melting point of glass. Semiconductors produced are suitable for semiconductor devices such as photovoltaics or displays.

Method of growing heteroepitaxial single crystal or large grained semiconductor films on glass substrates and devices thereon

A light emitting device is provided that includes at least one first semiconductor material layers and at least one second semiconductor material layers. At least one near-direct band gap material layers are positioned between the at least one first semiconductor layers and the at least one second semiconductor material layers. The at least one first semiconductor layers and the at least one second material layers have a larger band gap than the at least one near-direct band gap material layers. The at least one near-direct band gap material layers have an energy difference between the direct and indirect band gaps of less than 0.5 eV.

Engineering emission wavelengths in laser and light emitting devices

Growing community of inventors

Hanover, NH, United States of America

Jifeng Liu