Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Jiezhi Chen

Takao Marukame

Yuichiro Mitani

Yuuichiro Mitani

Yusuke Higashi

Tetsufumi Tanamoto

Yoshifumi Nishi

Kazuya Matsuzawa

Takahiro Kurita

Hiroyuki Nagashima

Atsuhiro Kinoshita

Reika Ichihara

Yuki Sasaki

Kazunori Kanebako

Katsuki Matsudera

Kuniharu Takahashi

According to an embodiment, a memory system includes a memory and a computation unit. Into the memory, data are written. The memory stores therein multiple check matrices. Each of the check matrices is associated with the number of errors in the written data. The computation unit is configured to perform a first error correction on the written data by selectively using, from among the check matrices, a check matrix associated with the number of errors recognized in the written data.

Memory system, error correction device, and error correction method

An arithmetic control device according to an embodiment controls arithmetic operations using a memory chip. The memory chip includes a memory cell array and a controller. The memory cell array includes a plurality of memory cells. The controller is configured to control access to the memory cell array. The arithmetic control device includes a first writing unit and a first reading unit. The first writing unit requests the controller to write a first value to a second cell near a first cell of the memory cell array. The first reading unit requests the controller to read a second value from the first cell after the first value is written to the second cell.

Arithmetic control device, memory system including the same, information processing device, and arithmetic control method

An individual identification device () according to embodiments may identify a storage device () including one or more memory chips (). The device comprises a first storage (), a region allocator (), and a hardware fingerprint generator (). The first storage may be configured to store write data. The region allocator may be configured to write the write data in a specific region in each memory chip. The hardware fingerprint generator may be configured to generate hardware fingerprint data based on mismatch bits between the write data and read data read out from the specific region in each memory chip.

Individual identification device, storage device, individual identification system, method of individual identification, and program product

According to an embodiment, an information processing system includes a time constant processor and a pattern generator. The time constant processor binarizes values indicating a plurality of unit circuits each including a gate insulating film on the basis of a time to emission indicating a time from when a defect in the gate insulating film captures a carrier in a channel current caused to flow by application of a gate voltage to the unit circuits to when the defect emits the carrier. The pattern generator generates a pattern unique to the unit circuits using the values indicating the respective unit circuits binarized by the time constant processor.

Information processing system and semiconductor device

According to an embodiment, a semiconductor device includes an error corrector, a read controller, and a majority processor. The error corrector is configured to perform error correction on data read from a storage, and output the number of errors contained in the data when errors cannot be corrected by the error correction. The read controller is configured to read pieces of data from a first address in the storage according to respective read conditions, select, from the read conditions, a read condition corresponding to a smallest of the numbers of errors obtained by the error correction performed on the pieces of data corresponding to the respective read conditions, and perform reading from the first address multiple times according to the selected read condition. The majority processor is configured to perform a majority process between a plurality of pieces of data obtained by the multiple times of reading.

Semiconductor device and reading method

According to an embodiment, a memory system includes first wiring lines; second wiring lines; third wiring lines; fourth wiring lines; and first and second storages. The first storage includes first memory cells arranged at intersections of the first wiring lines and the second wiring lines. Each of the third wiring lines is connected to any one of the first wiring lines. Each of the fourth wiring lines is pre-associated with a logical address specified by a host apparatus. The second storage includes second memory cells arranged at intersections of the third wiring lines and the fourth wiring lines. A resistance state of each of the second memory cells is set to a first resistance state or a second resistance state where a resistance value is lower than that in the first resistance state, according to a correspondence relationship between the logical address and the first wiring line.

Memory system

A memory system according to an embodiment may have an integration unit and a prediction unit. The integration unit may detect substrate current flowing through a substrate of a non-volatile memory when the non-volatile memory with a memory cell which has binary or multivalued being the binary or more is written/erased. The integration unit may records an integration value of the detected substrate current into a storage. The prediction unit may predict a lifetime of the non-volatile memory based on the integration value which is recorded on the storage.

Memory system, control system and method of predicting lifetime

A non-volatile variable resistive element according to an embodiment comprises a first electrode including a first metal, a second electrode including a second metal, a third electrode placed opposite to the first and second electrodes, and a variable resistive layer placed between the first and second electrodes and the third electrode, a resistance of the variable resistive layer reducing when at least either one of the first metal and the second metal is diffused into the variable resistive layer and the resistance of the variable resistive layer rising when at least either one of the first metal and the second metal diffused into the variable resistive layer is collected by the first electrode or the second electrode.

Non-volatile variable resistive element, controlling device and storage device

A memory system according to embodiments comprises a memory chip that includes a memory cell array having a plurality of memory cells, a first writing unit that writes first data in a first memory cell in the memory cell array, and a second writing unit that writes second data in a second memory cell which is adjacent to the first memory cell. The second data is used in adjusting a threshold value of the first memory cell.

Memory system and control method

According to an embodiment, a semiconductor storage device includes a first storage unit, a read control unit, a second storage unit, and a write control unit. The first storage unit is configured to store data supplied from a host device. The read control unit is configured to perform control of reading the data in accordance with a read request. The second storage unit is configured to store a logical address used for reading the data from the first storage unit by the read control unit. The write control unit is configured to perform control of adding the stored logical address to the data and write the resulting data into the first storage unit in a case where a size of the data requested to be written into the first storage unit by the host device is smaller than a threshold.

Semiconductor storage device for handling write to nonvolatile memories with data smaller than a threshold

According to an embodiment, an error correction device includes first calculators, second calculators, estimators, and an inverter. Each first calculator calculates a first message representing a probability that 1-bit data that is input in a corresponding variable node is 1. Each second calculator calculates a second message representing a probability that a value of the data input to the variable node is 1 for each of two or more variable nodes connected to the check node by using the first messages of the variable nodes connected to the check node. Each estimator estimates a true value of the data input to the variable node to generate an estimated value by using the first and second messages. The inverter inverts the estimated value associated with at least one of the variable nodes with a probability higher than 0 and lower than 1.

Growing community of inventors

Kanagawa, Japan

Jiezhi Chen