Toshiba Memory Corporation

Toshiba Memory Cororation

Jieyun Zhou

Kosuke Hatsuda

Yoshiaki Osada

Yorinobu Fujino

Shinichiro Shiratake

According to one embodiment, a memory device includes a preamplifier configured to execute a first read in which a first current relating to a memory cell is passed through a first path and a second current relating to the first current is passed through a second path, to generate a first voltage, to write first data to the memory cell; and to execute a second read in which a third current relating to the memory cell with the first data written thereto is passed through the first path and a fourth current relating to the third current is passed through the second path, to generate a second voltage; and a sense amplifier configured to determine data stored in the memory cell during execution of the first read based on the first voltage and the second voltage.

Memory device

According to one embodiment, a semiconductor device includes a variable resistance circuit having first and second resistance elements connected in series, first and second switch elements connected in parallel with the first resistance element, and third and fourth switch elements connected in parallel with the second resistance element. In a case where the first resistance element is short-circuited, and the second resistance element is not short-circuited, one of the first and second switch elements is turned ON. In a case where the second resistance element is short-circuited, and the first resistance element is not short-circuited, one of the third and fourth switch elements is turned ON. In a case where the first and second resistance elements are short-circuited, the first to fourth switch elements are turned ON.

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Fujisawa Kanagawa, Japan

Jieyun Zhou