Samsung Electronics Co., Ltd.

Jieon Yoon

Jinbum Kim

Choeun Lee

Kwan Heum Lee

Seokhoon Kim

Sujin Jung

Gyeom Kim

Nam-Kyu Kim

Donghun Lee

Bonyoung Koo

Dong Chan Suh

Byeongchan Lee

Jeongho Yoo

Jaeyoung Park

A method of fabricating a semiconductor device is provided as follows. A source/drain pattern is formed on a substrate. The source/drain pattern contains silicon atoms and germanium atoms. At least one germanium atom is removed from the germanium atoms of the source/drain pattern.

Semiconductor devices and methods of fabricating the same

Provided is a method of fabricating a semiconductor device. The method includes forming a gate pattern on a semiconductor substrate, injecting amorphization elements into the semiconductor substrate to form an amorphous portion at a side of the gate pattern, removing the amorphous portion to form a recess region, and forming a source/drain pattern in the recess region. When the recess region is formed, an etch rate of the amorphous portion is substantially the same in two different directions (e.g., &#x3c;111&#x3e; and any other direction) of the semiconductor substrate.

Methods of fabricating a semiconductor device

Growing community of inventors

Hwaseong-si, South Korea

Jieon Yoon