Semiconductor Manufacturing International (shanghai) Corporation

Huawei Technologies Co., Limited

Honor Device Co., Ltd.

Jieguang Huo

Jianping Yang

Yuanyou Li

Chunyan Xin

Wei Luo

Rongyue Xu

Yanyong Wang

Jun Wu

Herb He Huang

Hong Iris Zhu

Cheng Du

Congchao Zhu

Huanhuan Ao

Chunyun Xin

A multi-channel video recording method comprises: starting, by an electronic device, a camera; acquiring images by using a first camera lens and a second camera lens in a plurality of camera lenses; displaying a preview interface, where the preview interface includes a first image and a second image; the first image is an image acquired by the first camera lens, the second image is from the second camera lens, and the second image corresponds to a central area of an image acquired by the second camera lens; and the first image is located in a first area in the preview interface, and the second image is located in a second area in the preview interface; starting video recording after detecting a video recording instruction operation of a user; and displaying a shooting screen, where the shooting screen includes the first area and the second area.

Multi-channel video recording method and device

A recording frame rate control method includes a mobile terminal starts video recording and collects N video frames of a photographing scenario at a first frame rate. The mobile terminal determines light intensity in the photographing scenario based on the N video frames, and adjusts a recording frame rate of the mobile terminal based on the light intensity in the photographing scenario.

Recording frame rate control method and related apparatus

This application provides a photographing method and an electronic device, and relates to the field of terminal technologies, to ensure stabilization performance existing during photographing in a zoom scenario, and improve definition of a photographing image. The method includes: obtaining a first photographing image through a first camera; determining a first crop ratio of the first photographing image based on a first zoom ratio of the first photographing image; cropping the first photographing image based on the first crop ratio; obtaining a second photographing image through the first camera in response to a first zoom operation; and cropping the second photographing image based on the second crop ratio; wherein the second crop ratio is greater than the first crop ratio, and a stabilization angle of the second photographing image is a product of the FOV of the first camera and the second crop ratio.

Photographing method and electronic device

A method includes obtaining a first image of a to-be-photographed object based on an input received by way of a user interface, the first image being obtained using a terminal having a lens in a first position. The method also includes detecting a moir&#xe9; pattern on the first image. The method further includes automatically moving the lens from the first position to a second position on a plane perpendicular to an optical axis of the lens. The method additionally includes obtaining at least one second image of the to-be-photographed object one or more of with the lens in the second position or between the first position and the second position. The method also includes restoring a detected moir&#xe9; pattern region of the first image based on the at least one second image to generate a restored image. The method further includes outputting the restored image to a display.

Image photographing method applied to terminal, and terminal device

An image sensor includes an array of photo-sensing regions formed in a semiconductor substrate, a dielectric layer over the array of photo-sensing regions, and an array of microlenses formed in the dielectric layer. Each of the microlenses is center-aligned over one of the photo-sensing regions and has a truncated plano-convex shape. The microlenses have an index of refraction that is higher than the dielectric layer's refraction index. Each of the microlenses has a smooth circular top, a flat circular bottom, and a curved circumferential side convex towards the semiconductor substrate.

Method and system of embedded microlens

A method for fabricating CMOS image sensor device includes providing a P-type semiconductor substrate. The semiconductor substrate includes a surface region. The method includes forming a first dielectric layer having a first thickness overlying a first region of the semiconductor substrate. The method includes providing an N type impurity region in a portion of the semiconductor substrate underneath the first dielectric layer to cause formation of a photodiode device region characterized by at least the N type impurity region and the P type substrate. A second dielectric layer having a second thickness is formed in a second region of the surface region. The second dielectric layer is formed within a portion of the first region within the first thickness of the first dielectric layer. The method includes forming a polysilicon gate layer overlying at least the second region to form a contact member coupled to the second region.

Method of interconnect for image sensor

A method of forming a CMOS image sensor device. The method includes providing a semiconductor substrate having a P-type impurity characteristic. The semiconductor substrate includes a surface region. The method includes forming a gate oxide layer overlying the surface region and forming a first gate structure overlying a first portion of the gate oxide layer, the first gate structure has a top surface region and at least a side region. The method forms an N-type impurity region in a portion of the semiconductor substrate to form a photodiode device region from the N-type impurity region and the P-type impurity. The method includes forming a blanket spacer layer including an oxide on nitride on oxide structure overlying at least the first gate structure; and forming one or more spacer structures using the blanket spacer layer for the first gate structure while maintaining a portion of the oxide layer from the oxide on nitride on oxide overlying at least the photo-diode device region.

ONO spacer etch process to reduce dark current

A method of forming a CMOS image sensor device, the method includes providing a semiconductor substrate having a P-type impurity characteristic including a surface region. The method forma first thickness of silicon dioxide in a first region of the surface region, a second thickness of silicon dioxide in a second region of the surface region, and a third thickness of silicon dioxide in a third region of the surface region. The method includes forming a first gate layer overlying the second region and a second gate layer overlying the third region, while exposing a portion of the first thickness of silicon dioxide. An N-type impurity characteristic is formed within a region within a vicinity underlying the first thickness of silicon dioxide in the first region of the surface region to cause formation of a photo diode device characterized by the N-type impurity region and the P-type substrate.

Method and structure for a CMOS image sensor using a triple gate process

The present invention provides a method for fabricating a pixel cell of CMOS image sensor, comprising: preparing a semiconductor substrate divided into region I and region II; forming an insulation layer on the surface of the semiconductor substrate in the region I and a gate dielectric layer on the surface of the semiconductor substrate in the region II; forming a poly-silicon gate on the surface of the semiconductor substrate in the region II; forming a deep doped well in the region I through an ion implantation with high energy; performing an ion implantation with low energy in the region I and an ion implantation for lightly doped source/drain in the region II simultaneously; and forming source/drain regions in the semiconductor substrate in the region II.

Method for fabricating pixel cell of CMOS image sensor

Techniques for manufacturing a CMOS image sensor are provided. A semiconductor substrate is provided, and at least one isolation region can be formed between a periphery region of the substrate and a photo-sensing region of the substrate. A first well in the periphery region and a second well in the photo-sensing region of the substrate are formed. A third well associated with a photodiode is also formed. A gate oxide layer, polysilicon layer, and first metal layer are respectively deposited. The polysilicon layer and first metal layer are etched to form an least one gate in the photo-sensing region and at least one gate in the periphery region. At least two doped regions in the first well are formed, as well as a doped region in the second well. A silicide block layer is deposited over the photo-sensing region of the substrate. A second metal layer is deposited at least over the periphery region after deposition of the silicide block. The substrate is exposed to a thermal environment to form silicide. The second metal layer is removed by etching.

Method of making CMOS image sensor-hybrid silicide

Method of making CMOS image sensor&#x2014;hybrid silicide

A method and device for image sensing. The method includes forming a first well and a second well in a substrate, forming a gate oxide layer on the substrate, and depositing a first gate region and a second gate region on the gate oxide layer. The first gate region is associated with the first well, and the second gate region is associated with the second well. Additionally, the method includes forming a third well in the substrate, implanting a first plurality of ions to form a first lightly doped source region and a first lightly doped drain region in the first well, implanting a second plurality of ions to form at least a second lightly doped drain region in the second well, and implanting a third plurality of ions to form a source in the second well.

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Shanghai, China

Jieguang Huo