Guangdong Aiko Solar Energy Technology Co., Ltd.

Zhejiang Aiko Solar Energy Technology Co., Ltd.

Jiebin Fang

Kang-Cheng Lin

Chun-Wen Lai

Gang Chen

Ta-Neng Ho

Mingzhang Feng

Xiaoming Zhang

Wenjie Yin

Daneng He

Nailin He

Huimin Wu

The present invention discloses a method for preparing a bifacial PERC solar cell. The present invention has high photoelectric conversion efficiency, high appearance quality, and high EL yield, and could solve the problems of both scratching and undesirable deposition.

Preparation method for bifacial perc solar cell

Disclosed is a positive electrode of a crystalline silicon solar cell with a break-proof grid function, comprising a positive electrode busbar (), a positive electrode grid (), and a break-proof grid structure (). The break-proof grid structure () and the positive electrode grid () are integrally printed and formed. The break-proof grid structure () is an octagon with a hollow-out groove () provided on its rear side. The break-proof grid structure () includes a rectangular grid segment () located in the middle, and two isosceles trapezoidal grid segments () that are located at both sides of the rectangular grid segment () and are provided symmetrically with the rectangular grid segment () as a center. The rectangular grid segment () spans the positive electrode busbar (), and the left and right ends of the rectangular grid segment () extend out of the positive electrode busbar (). The extended grid segment is a rectangular extensional break-proof grid segment (). Both ends of the isosceles trapezoidal grid segment () respectively are in contact with the extensional break-proof grid segment () and the positive electrode grid (). The hollow-out groove () is located within the isosceles trapezoidal grid segment () or spans the extensional break-proof grid segment () and the isosceles trapezoidal grid segment (). A break-proof grid design in the positive electrode employs the combination of the octagon and the hollow-out groove, and can effectively reduce the probability of grid breakage when the front-side electrode is printed.

Positive electrode of crystalline silicon solar cell having gate rupture prevention function

A method for removing an undesired coating from a front face of a crystalline silicon solar cell includes: S: depositing an AlOfilm, an SiOfilm, and an SiNfilm on a back face of a silicon wafer to form a backside passivation film, and forming an undesired coating on an edge of the front face of the silicon wafer; S: preparing an aqueous film on a surface of the backside passivation film of the product obtained in S; S: passing the product obtained in Sthrough an acid tank to remove the undesired coating; S: passing the product obtained in Sthrough a water tank to remove a residual treatment solution; and S: drying the product obtained in S

Method for removing undesired coating from front face of crystalline silicon solar cell

A PERC solar cell capable of improving photoelectric conversion efficiency and a preparation method thereof are provided. The solar cell consecutively includes, from the bottom up, a rear silver electrode (), a rear aluminum field (), a rear silicon nitride film (), a rear aluminum oxide film (), P-type silicon (), N-type silicon (), a front silicon nitride film (), and a front silver electrode (). The rear aluminum field () is connected to the P-type silicon () via a rear aluminum strip (). The P-type silicon () is a silicon wafer of the cell. The N-type silicon () is an N-type emitter formed by diffusion via the front surface of the silicon wafer. The front silicon nitride film () is deposited on the front surface of the silicon wafer. The rear aluminum oxide film () is deposited on the rear surface of the silicon wafer. The rear aluminum oxide film () is deposited after the front silicon nitride film () is deposited on the silicon wafer, and the rear surface of the silicon wafer is washed before depositing the rear aluminum oxide film (). The cell can significantly improves passivation effect of the rear aluminum oxide film and improve the open-circuit voltage and short-circuit current of the cell, thereby increasing photoelectric conversion efficiency of the cell.

PERC solar cell capable of improving photoelectric conversion efficiency and preparation method thereof

Provided are a bifacial P-type PERC solar cell, preparation method, module and system. The bifacial P-type PERC solar cell consecutively comprises a rear silver electrode (), rear aluminum grid lines (), a rear passivation layer (), P-type silicon (), an N-type emitter (), a front silicon nitride film (), and a front silver electrode (); the rear silver electrode () is perpendicularly connected with the rear aluminum grid lines (), grid line backbones () are disposed on the rear aluminum grid lines (), an outer aluminum grid frame () is disposed around the rear aluminum grid lines (), the grid line backbones () are connected with the rear aluminum grid lines (), and the outer aluminum grid frame () is connected with the rear aluminum grid lines () and the rear silver electrode (); a first laser grooving region () is formed in the rear passivation layer () with laser grooving, and the rear aluminum grid lines () are connected to the P-type silicon () via the first laser grooving region (); the first laser grooving region () includes a plurality of sets of first laser grooving units () arranged horizontally, each of the sets of first laser grooving units () includes one or more first laser grooving bodies () arranged horizontally, and the rear aluminum grid lines () are perpendicular to the first laser grooving bodies (). The solar cell is simple in structure, low in cost and easy to popularize, and has a high photoelectric conversion efficiency.

Bifacial P-type PERC solar cell and module, system, and preparation method thereof

The present invention discloses a bifacial P-type PERC solar cell, which consecutively comprises a rear silver electrode, a rear aluminum grid, a rear passivation layer, P-type silicon, an N-type emitter, a front silicon nitride film, and a front silver electrode, wherein the rear silver electrode intersects with the rear aluminum grid line by a first predetermined angle, the first predetermined angle being greater than 10 degrees and smaller than 90 degrees; the rear passivation layer is grooved with laser to form a first laser grooving region, which is disposed below the rear aluminum grid line; the rear aluminum grid line is connected to the P-type silicon via the first laser grooving region and is provided at its periphery with an outer aluminum grid frame, the outer aluminum grid frame being connected to the rear aluminum grid line and the rear silver electrode. The present invention is simple in structure, low in cost, easy to popularize, and has high photoelectric conversion efficiency.

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Foshan, China

Jiebin Fang