Shenzhen Newsonic Technologies Co., Ltd.

Huawei Device Co., Ltd.

Huawei Technologies Co., Limited

Huawei Device (Dongguan) Co., Ltd.

Honor Device Co., Ltd.

China Nuclear Power Engineering Company Ltd.

China General Nuclear Power Corporation

Cgn Power Co., Ltd.

China Nuclear Power Design Company Ltd. (Shenzhen)

Jie Zou

Gongbin Tang

Linfang Jin

Hualin Li

Chencheng Zhou

Guoping Wang

Yongwang Xiao

Lei Huang

Xiangyang Yang

Nanbo Kang

Wenbing Tang

Weiwei Hu

Hao Sun

Jian Wang

Bo Wang

Lei Zhong

Konggang Wei

Yan Wang

Yang Yang

Xiaowei Hui

Gang Zhang

Bo Cheng

Qiang Xiong

Mingxing Yang

Wei Di

Lianming Zhang

Wenfeng Wang

Tianpeng Wang

Xiao Yu Liu

Xue Gang Zhang

Jian Wang Qiao

Yi Chao Zhou

Shi Bai Mei

A bulk acoustic wave (BAW) resonator includes a piezoelectric layer, a first electrode layer disposed on a first side of the piezoelectric layer and including a first electrode and an additional electrode electrically isolated from each other, a second electrode layer disposed on a second side of the piezoelectric layer and including a second electrode, one or more conductive pads disposed on the second side of the piezoelectric layer and at least including an interconnection pad electrically connected to the second electrode and the additional electrode, a carrier structure disposed on the first side of the piezoelectric layer, a cover structure disposed on the second side of the piezoelectric layer and including a cover bonding layer and a cover substrate. A first cavity is disposed between the carrier structure and the piezoelectric layer. A second cavity is disposed between the cover structure and the piezoelectric layer.

Bulk acoustic wave resonator and method for manufacturing the same

A surface acoustic wave resonator device and manufacturing method therefor and filter, the surface acoustic wave resonator device includes: an interdigital transducer, disposed on a piezoelectric substrate and including first and second interdigital electrode lead-out parts, and first and second interdigital electrodes located in the body region and respectively connected to the first and second interdigital electrode lead-out parts; and a conductive structure, disposed on a side of the interdigital transducer away from the piezoelectric substrate, and at least includes a body structure and a first sawtooth structure, the body structure continuously extends across the interdigital electrodes in the second direction, the first sawtooth structure is located at a side of the body structure, and at least a portion of the body structure and the first sawtooth structure overlap with end portions of the interdigital electrodes close to a periphery region in the third direction.

Surface acoustic wave resonator device and manufacturing method therefor and filter

A surface acoustic wave resonator device, manufacturing method therefor and filter, the surface acoustic wave resonator device includes: an interdigital transducer, located on a piezoelectric substrate and including first and second interdigital electrode lead-out parts, and first and second interdigital electrodes extending along a first direction and alternately arranged along a second direction, the first interdigital electrode is connected to the first interdigital electrode lead-out part, and the second interdigital electrode is connected to the second interdigital electrode lead-out part; and a clutter suppression structure, including a body structure and a sawtooth structure, wherein the body structure continuously extends along the second direction and overlaps with the interdigital electrodes in a third direction, and the sawtooth structure is disposed at a side of the body structure in the first direction, and at least a portion of the sawtooth structure overlaps with the interdigital electrodes in the third direction.

Surface acoustic wave resonator device, manufacturing method therefore and filter

An acoustic wave device includes a piezoelectric substrate and an interdigital transducer disposed on the piezoelectric substrate, the interdigital transducer including a center region, first and second edge regions, and first and second gap regions, a temperature compensation layer covering the interdigital transducer, and a floating metal layer buried in the temperature compensation layer or disposed on top of the temperature compensation layer. The floating metal layer includes a plurality of floating metal blocks spaced apart from each other and overlapping at least the first and second edge regions of the interdigital transducer.

Surface acoustic wave device

A surface acoustic wave resonator device, and method for manufacturing the same and filter, the method includes: forming an interdigital transducer including interdigital electrodes on the piezoelectric substrate; forming the interdigital transducer includes: forming initial interdigital electrodes on the piezoelectric substrate, wherein each initial interdigital electrode has a first width, and every two adjacent initial interdigital electrodes have an initial interdigital gap with a first spacing therebetween; and forming additional interdigital electrodes on the piezoelectric substrate, wherein each initial interdigital gap has a portion filled by one of additional interdigital electrodes; each interdigital electrode includes an initial interdigital electrode and an additional interdigital electrode connected to each other; each interdigital electrode has a second width, and every two adjacent interdigital electrodes have a second spacing therebetween; the second width is greater than the first width, and the second spacing is smaller than the first spacing.

Surface acoustic wave resonator device and method for manufacturing the same and filter

A surface acoustic wave resonator device and method for manufacturing the same, and filter, the surface acoustic wave resonator device includes an interdigital electrode body region, and including: a piezoelectric substrate; a first interdigital electrode, a first interdigital electrode connection part and a first interdigital electrode lead-out part electrically connected to each other; a second interdigital electrode, a second interdigital electrode connection part and a second interdigital electrode lead-out part electrically connected to each other; and a spanning structure; wherein the first and second interdigital electrode connection parts are respectively located on opposite sides of the interdigital electrode body region; the first interdigital electrode connection part contacts the first interdigital electrode and is electrically isolated from the second interdigital electrode through the spanning structure; the second interdigital electrode connection part contacts the second interdigital electrode and is electrically isolated from the first interdigital electrode through the spanning structure.

Surface acoustic wave resonator device and method for manufacturing the same, and filter

A surface acoustic wave resonator device and method for manufacturing the same and filter, the surface acoustic wave resonator device includes: a piezoelectric substrate; an interdigital transducer, disposed on the piezoelectric substrate and comprising a first interdigital electrode structure and a second interdigital electrode structure, wherein each interdigital electrode structure comprises an interdigital electrode and an interdigital electrode lead-out part connected with each other; and a first temperature compensation layer, disposed on the piezoelectric substrate and comprising a body part and a protruding part, wherein the body part covers the interdigital transducer, the protruding part is protruded from the body part towards the piezoelectric substrate in a third direction perpendicular to a main surface of the piezoelectric substrate, and is surrounded by the piezoelectric substrate in a direction parallel to the main surface of the piezoelectric substrate.

A bulk acoustic wave resonator and method for manufacturing the same, the bulk acoustic wave resonator includes: a piezoelectric layer; a first electrode layer, a carrier structure, and first and second conductive connectors disposed on a first side of the piezoelectric layer, and a second electrode layer, an interconnection pad and a cover structure disposed on a second side of the piezoelectric layer, wherein the first electrode layer includes a first electrode and an additional electrode electrically isolated from each other; the second electrode layer includes a second electrode; the interconnection pad is electrically connected to the second electrode and the additional electrode; a first cavity is disposed between the carrier structure and the piezoelectric layer; the first conductive connector is electrically connected to the first electrode, the second conductive connector is electrically connected to the second electrode through the additional electrode and the interconnection pad.

A surface acoustic wave resonator device, its manufacturing method, and a filter are disclosed. The device includes a piezoelectric substrate, and an interdigital transducer on a side of the substrate, having an interdigital electrode region, and including a first interdigital electrode and a first interdigital electrode lead-out part connected to each other, and a second interdigital electrode and a second interdigital electrode lead-out part connected to each other. The first and second interdigital electrodes are located in the interdigital electrode region, extending along a first direction and alternately arranged in a second direction. The first and second interdigital electrode lead-out parts are located on opposite sides of the interdigital electrode region. A first conductive structure and a second conductive structure overlap with end portions of the interdigital electrodes and are electrically connected to the corresponding interdigital electrodes, respectively.

Surface acoustic wave resonator device and method of manufacturing the same, filter

A method for fabricating a film bulk acoustic resonator (FBAR) filter device is provided. The method includes: forming a first electrode of each one of a first resonator and a second resonator on a first surface of a piezoelectric layer, forming a first passivation layer of each one of the first resonator and the second resonator on a corresponding one of the first electrodes, forming a second electrode of each one of the first resonator and the second resonator on a second surface of the piezoelectric layer, conducting a radio frequency (RF) performance test on the FBAR filter device, adjusting a thickness of the second electrode of the first resonator based on a result of the RF performance test, and forming a second passivation layer of each one of the first resonator and the second resonator on a corresponding one of the second electrodes.

Fabrication method of film bulk acoustic resonator (FBAR) filter device

A power adapter control method is provided. The method includes: obtaining a scanning frequency of the TP and a strength of common mode noise generated by a power adapter at the scanning frequency of the TP; determining whether the strength of the common mode noise is greater than or equal to a preset threshold; and when the strength of the common mode noise is greater than or equal to the preset threshold, adjusting a working frequency of a control IC of the power adapter, so that a strength of common mode noise newly generated by the power adapter at the scanning frequency of the TP is less than the preset threshold. The embodiments of the present invention are used for a process of reducing interference of the common mode noise to the TP.

Power adapter control method and control apparatus

The present invention provides a heat dissipation assembly and an electronic device, where the heat dissipation assembly includes: a shielding element, where a via hole is disposed on the shielding element, the shielding element is electrically connected to ground copper of a PCB board, and a heat-generating electronic element is disposed on the PCB board; a heat pipe, located on the via hole, where the heat pipe is electrically connected to the shielding element, and the heat pipe, the PCB board, and the shielding element form an electromagnetic shielding can that is used to accommodate the heat-generating electronic element; and an elastic thermal interface material, disposed between the heat pipe and the heat-generating electronic element and mutually fitted to the heat pipe and the heat-generating electronic element.

Heat dissipation assembly and electronic device

A holder and a mobile terminal including the holder are disclosed. The holder is located in the mobile terminal, the holder includes a heat conduction area and a heat insulation area, the heat insulation area is close to an edge of the holder, the heat insulation area is adjacent to the heat conduction area, and a heat emitting element in the mobile terminal is proximate to the heat conduction area. The heat insulation area is provided on the holder, and the heat insulation area is close to the edge of the holder and is adjacent to the heat conduction area, so that, in a process of transferring heat in the heat conduction area to the edge of the holder, the heat is impeded by the heat insulation area, thereby reducing heat at the edge of the holder.

Holder and mobile terminal

This application provides a touchscreen interference suppression method and apparatus, and a terminal device. In the method, when a touchscreen is in an untouched state, whether a wideband interference signal exists in the touchscreen is detected; and when the wideband interference signal exists, a detection bandwidth of a filter unit is reduced.

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Shenzhen, China

Jie Zou