Semiconductor Manufacturing International (shanghai) Corporation

Semiconductor Manufacturing International (beijing) Corporation

Dsm IP Assets B.v.

Sunshine Guojian Pharmaceutical (shanghai) Co., Ltd.

Sap Ag

Sap Se

Delta Electronics (shanghai) Co., Ltd

Shanghai Jiaotong University

Zhejiang Dsm Zhongken Biotechnology Co. Ltd

Sunshine Guojian Pharmaceutical (shanghai) Co., Lt

Jie Zhao

Zhenping Zhu

Haomin Huang

Jiaqi Yang

Youneng Xiao

Teng Liu

Lifeng Qiao

Dehui Zhang

Chenghai Zhang

Jinlin Guo

Yizhi Zeng

Wei Dang

Lingqiao Zhu

Guojun Liu

Wouter Adrianus Van Winden

Rogier Meulenberg

Honghai Gao

Liangfeng Jiang

Chienkuo Yuan

Zhihui Gao

Jianping Ying

Liang Wang

Lei Huang

Jing Gu

Xin Xu

Yingyu Chen

Bin Dong

Yan Yang

Xiao Yang

Yu Cao

Le Zhao

Ramshankar Venkatasubramanian

Christiane Kuntz-Mayr

Suresh Babu

Heinz Kagermann

Xu Li

Jianhe Chen

Lin Ma

Xiangling Shi

Chengchang Wang

Yi Ru

Gan Li

Jiale Qu

Zhonglei Zou

Tangjun Zhou

Ying Xia

An Qin

Jia Lei Liu

Yuping Huang

Huiling Wu

Erlei Li

Mengying Xia

A system for driving power devices is provided, and the system includes a heat dissipation plate, semiconductor modules, gate plates, a control board, a bridge module, and a terminal module. The semiconductor modules are disposed on the heat dissipation plate. Each gate plate is disposed on the corresponding semiconductor module and includes first driving terminal. The control board is disposed on the heat dissipation plate. The bridge module and the terminal module are electrically connected to each other, disposed on the control board, and arranged sequentially in a direction from a center to an edge of the control board. The bridge module includes a plurality of driving bridge plates, and each driving bridge plate is electrically coupled to the control board. The terminal module includes a plurality of second driving terminals, and each second driving terminal is electrically connected to the corresponding driving bridge plate and first driving terminal.

System for driving power devices

Provided are an antibody that binds to human PD-L1, and a tetravalent bispecific antibody against PD-1 and PD-L1 constructed based on the antibody that binds to human PD-L1. The tetravalent bispecific antibody requires no Fc modification, has no mismatch problems, and the preparation method thereof is simple. The biological activities and physical and chemical properties of the tetravalent bispecific antibody are similar with or even better than those of the monoclonal antibodies.

Tetravalent bispecific antibody against PD-1 and PD-L1

A circuit for preventing false turn-on of a semiconductor switching device includes an active clamp circuit, a control circuit, a power amplifier circuit, and a suppression circuit. The control circuit is coupled to an input of the power amplifier circuit. An output of the power amplifier circuit is coupled to a gate of the semiconductor switching device. The active clamp circuit is configured to operate within a preset period when a voltage between the first end of the semiconductor switching device and a second end of the semiconductor switching device is greater than a preset voltage. The suppression circuit includes a controllable switch, which is configured to turn on after the operation of the active clamp circuit is completed, such that potential at the input of the power amplifier circuit is clamped to a fixed potential.

Circuit and control method for preventing false turn-on of semiconductor switching device

Disclosed are antibodies binding to human IL-4R, having identical variable regions and different constant regions, wherein the variable regions can specifically bind to human IL-4R, and the constant regions affect the activity of the whole antibody through an amino acid site mutation. The above-mentioned antibodies can be used to treat diseases related to IL-4R overexpression, such as atopic dermatitis, asthma, etc., and thus possesses good clinical application prospects.

Antibodies binding to human IL-4R, preparation method therefor and use thereof

The present disclosure provides the use of a recombinant human secretory DDRGK1. Experiments demonstrate that the recombinant human secretory DDRGK1 prepared by the present disclosure can be used in the preparation of biological medicines for treating intervertebral disc degeneration, fractures or bone defects. The recombinant human secretory DDRGK1 of the present disclosure provides a promising direction for the treatment of bone related diseases and has obtained firm scientific evidence, thereby expanding the further application of recombinant human secretory DDRGK1 in clinical practice.

Use of recombinant human secretory DDRGK1

A gellan gum product having double setting temperatures, its preparation method and use thereof are provided. The obtained product has low setting temperatures, and the provided preparation method has the advantages of simple pretreatment of fermentation broth, shortened production cycle and direct extraction of such gellan gum product from the fermentation broth

Gellan gum with double setting temperatures and the preparation method and use thereof

Disclosed is a monoclonal antibody that binds to human IL-5. The monoclonal antibody that binds to human IL-5 has a good biological activity for inhibiting TF-1 cell proliferation induced by IL-5 and blocking the interaction between IL-5 and IL-5RA, has a different antigen epitope from the known anti-human IL-5 antibody, can be used for preparing drugs for treating diseases mediated by the over-expression of eosinophilic granulocytes (such as asthma), and has a good clinical application prospect.

Monoclonal antibody binding to human IL-5, preparation method therefor and use thereof

An anti-human PD-1 monoclonal antibody, and a preparation method therefor and an application thereof. The anti-human PD-1 monoclonal antibody has good bioactivity, can effectively bind with an extracellular region of a human PD-1 protein receptor, and can effectively seal PD-1 protein at protein level and cellular level and block the binding of the PD-1 protein with a ligand PD-L1, thereby effectively enhancing immunity. The monoclonal antibody can be applied independently or jointly with other antitumor drugs to tumor immunotherapy and the diagnosis and screening of patients with PD-L1 positive tumors; and the monoclonal antibody has a promising prospect in the preparation of drugs for treating tumors, resisting autoimmune diseases and the like.

Anti-PD-1 monoclonal antibody, and preparation method therefor and application thereof

This invention provides a fermentation method of producing gellan gum, wherein a certain amount of fermentation broth is retained in the fermentor as a seed for next batch fermentation or transferred to another fermentor as a seed for next batch fermentation in that fermentor. The fermentation method of this invention reduces fermentation cost of gellan gum and lowers contamination risk during seed cultivation.

Fermentation method for producing gellan gum

The invention provides a new fermentation process for producing gellan gum, which can control the feeding amount and feeding speed of the nitrogen sources accurately and quantitatively, and control the growth and gum production of the strains, so as to significantly improve the controllability, stability and yield of the fermentation process for producing gellan gum.

Nitrogen source feeding fermentation process for producing gellan gum

An anti-human IL-17A monoclonal antibody, the preparation method, and the use thereof are provided. The anti-human IL-17A monoclonal antibody can specifically bind to human IL-17A and has a good effect for inhibiting the secretion of inflammatory cytokines, such as IL-6 and the like by means of various cell lines induced by IL-17A, and can be used for preparing drugs for treating diseases involving immune-medicated inflammatory responses.

Anti-human interleukin-17A monoclonal antibody

A semiconductor device includes a semiconductor substrate, an interlayer dielectric layer on the semiconductor substrate, a plurality of trenches extending through the interlayer dielectric layer to the semiconductor substrate and comprising a first trench of a PMOS device and a second trench of an NMOS device, a high-k dielectric layer on a bottom and sidewalls of the trenches, a PMOS work function adjustment layer on the high-k dielectric layer in the first trench, an NMOS work function adjustment layer on the high-k dielectric layer in the second trench, and a metal electrode layer on the PMOS work function adjustment layer in the first trench and on the NMOS work function adjustment layer in the second trench.

Structure for improving dielectric reliability of CMOS device

A method of manufacturing a semiconductor device includes providing a substrate structure including a semiconductor substrate, an interlayer dielectric layer on the semiconductor substrate, multiple trenches extending through the interlayer dielectric layer to the semiconductor substrate and including a first trench of a first NMOS device and a second trench of a second NMOS device, and a dielectric layer on sidewalls and a bottom of the trenches, forming an NMOS work function adjustment layer on the dielectric layer, performing a first oxidation treatment on the NMOS work function adjustment layer in the first trench to form a first oxide layer, and a second oxidation treatment on the NMOS work function adjustment layer in the second trench to form a second oxide layer, and forming a metal electrode layer in the trenches. The first oxide layer has an oxygen content lower than that of the second oxide layer.

Semiconductor device having multiple work functions and manufacturing method thereof

A method for preparing high transparent low acyl gellan gum from fermentation broth is provided, in which two-stage filtrations are carried out on deacylated gellan gum fermentation broth by using diatomite and/or perlite with different particle sizes as filter aid and filter media. The obtained product has high gel transparency and low content of metal ions. The method also has the advantages of simple pretreatment of fermentation broth, high impurities removal efficiency, simple operation, and easy to be industrialized.

Method for preparing high transparent low acyl gellan gum

The present disclosure provides semiconductor devices and fabrication methods thereof. A work function layer is formed on the semiconductor substrate. A buffer layer is formed on the work function layer. The work function layer is doped through the buffer layer with impurity ions. The buffer layer obstructs a flow of the impurity ions to control a concentration of the impurity ions in different regions of the work function layer to regulate a work function of the work function layer in the different regions.

Semiconductor device

Growing community of inventors

Shanghai, China

Jie Zhao