Applied Materials, Inc.

Jie Yuan

Jennifer Y Sun

Kenneth S Collins

Ren-Guan Duan

Li Xu

Yan Ye

Diana Xiaobing Ma

Hong Shih

Nianci Han

Chun Yan

Hui W Chen

Allen Richard Zhao

Chang-Lin Hsieh

Pavel Ionov

Danny Chien Lu

Peter Chang-Lin Hsieh

Senh Thach

Elmira Ryabova

Thomas Allen Graves

Xiaoming He

Chang Lin Hsieh

Theodoros Panagopoulos

Zhifeng Sui

Joe F Sommers

Eugene Tzou

Terry Leung

Coriolan I Frum

Michael C Willson

Renguan Duan

QiQun Zhang

Silvia Halim

Paul Vollmer

Disclosed herein is a ceramic article or coating useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article or coating is formed from a combination of yttrium oxide and zirconium oxide.

Coated article and semiconductor chamber apparatus formed from yttrium oxide and zirconium oxide

Method of forming a bulk article and semiconductor chamber apparatus from yttrium oxide and zirconium oxide

Method of forming a coated article and semiconductor chamber apparatus from yttrium oxide and zirconium oxide

A bulk, sintered solid solution-comprising ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas and provides advantageous mechanical properties. The solid solution-comprising ceramic article is formed from a combination of yttrium oxide and zirconium oxide. The bulk, sintered solid solution-comprising article is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 6 mole %.

Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance

A solid solution-comprising ceramic article useful in semiconductor processing, which article may be in the form of a solid, bulk ceramic, or may be in the form of a substrate having a ceramic coating of the same composition as the bulk ceramic material on at least one outer surface. The ceramic article is resistant to erosion by halogen-containing plasmas and provides advantageous mechanical properties. The solid solution-comprising ceramic article is formed from a combination of yttrium oxide and zirconium oxide. The ceramic-comprising article includes ceramic which is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 91 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 9 mole %.

Semiconductor processing apparatus with a ceramic-comprising surface which exhibits fracture toughness and halogen plasma resistance

A solid solution-comprising ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The solid solution-comprising ceramic article is formed from a combination of yttrium oxide, zirconium oxide, and aluminum oxide. In a first embodiment, the solid solution-comprising ceramic article is a solid, sintered body of the solid solution ceramic material. In a second embodiment, the solid solution-comprising article comprises a substrate underlying a solid solution-comprising coating.

Semiconductor processing apparatus comprising a solid solution ceramic formed from yttrium oxide, zirconium oxide, and aluminum oxide

Specialty ceramic materials which resist corrosion/erosion under semiconductor processing conditions which employ a corrosive/erosive plasma. The corrosive plasma may be a halogen-containing plasma. The specialty ceramic materials have been modified to provide a controlled electrical resistivity which suppresses plasma arcing potential.

Method of reducing plasma arcing on surfaces of semiconductor processing apparatus components in a plasma processing chamber

A ceramic coated article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic coated article includes an aluminum substrate coated with a solid solution coating formed from a combination of yttrium oxide and zirconium oxide. The ceramic coating is formed from yttrium oxide at a molar concentration ranging from about 90 mole % to about 70 mole %, and zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %. In a second embodiment, the ceramic article includes ceramic which is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 6 mole %.

Semiconductor processing apparatus comprising a coating formed from a solid solution of yttrium oxide and zirconium oxide

Plasma-resistant ceramics with controlled electrical resistivity

A solid solution-comprising ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The solid solution-comprising ceramic article is formed from a combination of yttrium oxide and zirconium oxide. In a first embodiment, the ceramic article includes ceramic which is formed from yttrium oxide at a molar concentration ranging from about 90 mole % to about 70 mole %, and zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %. In a second embodiment, the ceramic article includes ceramic which is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 6 mole %.

Semiconductor processing apparatus which is formed from yttrium oxide and zirconium oxide to produce a solid solution ceramic apparatus

A method of fabricating silicon parts are provided herein. The method includes growing a silicon sample, machining the sample to form a part, and annealing the part by exposing the part sequentially to one or more gases. Process conditions during silicon growth and post-machining anneal are designed to provide silicon parts that are particularly suited for use in corrosive environments.

Method of fabricating plasma reactor parts

A method of fabricating yttria parts is provided herein. In one embodiment, the method includes sintering a yttria sample, machining the sintered sample to form a part, and annealing the part by heating the part at a predetermined heating rate, maintaining the part at a constant annealing temperature, and cooling the part at a predetermined cooling rate. At least one of the sintering and annealing atmospheres is an oxygen-containing atmosphere.

Method for fabricating plasma reactor parts

A method of fabricating doped quartz component is provided herein. In one embodiment, the doped quartz component is a yttrium doped quartz ring configured to support a substrate. In another embodiment, the doped quartz component is a yttrium and aluminum doped cover ring. In yet another embodiment, the doped quartz component is a yttrium, aluminum and nitrogen containing cover ring.

Erosion resistance enhanced quartz used in plasma etch chamber

A ceramic article which is resistant to erosion by halogen-containing plasmas used in semiconductor processing. The ceramic article includes ceramic which is multi-phased, typically including two phase to three phases. The ceramic is formed from yttrium oxide at a molar concentration ranging from about 50 mole % to about 75 mole %; zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %; and at least one other component, selected from the group consisting of aluminum oxide, hafnium oxide, scandium oxide, neodymium oxide, niobium oxide, samarium oxide, ytterbium oxide, erbium oxide, cerium oxide, and combinations thereof, at a molar concentration ranging from about 10 mole % to about 30 mole %.

Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmas

Growing community of inventors

San Jose, CA, United States of America

Jie Yuan