Wavefront Holdings, LLC

Other

Jds Uniphase Corporation

Bwt Property, Inc.

Jie Yao

Disclosed are phototransistors, and more specifically a detector that includes two or more phototransistors, conductively isolated from each other. Embodiments also relate to methods of making the detector.

Conductive isolation between phototransistors

Disclosed herein is a phototransistor (PT) comprising an emitter, a collector and a floating base; wherein the floating base, a p-n junction between the emitter and base (E-B junction) and a p-n junction between the base and the collector (B-C junction) are collectively in direct physical contact only with and completely encapsulated only by the emitter, the collector, and a section of a dielectric. Under an operating condition of the PT, a DC current density averaged over the E-B junction or a DC current density averaged over the B-C junction may be at least 100 times of a DC current density averaged over an opto-electronically active region of the PT. A sum of a capacitance of the E-B junction and a capacitance of the B-C junction may be less than 1 fF.

Phototransistor having E-B junction and B-C junction are in direct physical contact and completely encapsulated only by the emitter, the collector and a dielectric

Disclosed are a semiconductor photodiode (PD) or phototransistor (PT) photo detector with a unipolarly doped edge region containing a portion of the photon absorption layer and occupying over 99% of the photo detector area as projected on a plane parallel to the semiconductor substrate. Embodiments also relate to methods of making the photo detector.

Unipolar doping in photodiode and phototransistor

Disclosed herein is a phototransistor (PT) comprising an emitter, a collector, a floating base, wherein the PT is configured to detect a photon flux incident on the PT and the photon flux being lower than one single photon within f, or wherein the PT is configured to detect a photon flux incident on the PT and the photon flux being below a photon shot noise of the photon flux within f, or wherein the PT is configured to detect a photon flux incident on the PT and the photon flux is 1/&#x221a;{square root over (&#x3b2;)} of a photon shot noise of the photon flux within f, or wherein the PT is capable of detecting a photon flux incident on the PT and the photon flux being below 2f, or wherein the PT is capable of detecting a photon flux incident on the PT and the photon flux being 2f/&#x3b2;, wherein f is an electrical bandwidth of the PT and &#x3b2; is a current amplification gain of the PT.

Phototransistor capable of detecting photon flux below photon shot noise

A two-terminal mesa phototransistor and a method for making it are disclosed. The photo transistor has a mesa structure having a substantially planar semiconductor surface. In the mesa structure is a first semiconductor region of a first doping type, and a second semiconductor region of a second doping type opposite to that of the first semiconductor region, forming a first semiconductor junction with the first region. In addition, a third semiconductor region of the first doping type forms a second semiconductor junction with the second region. The structure also includes a dielectric layer. The second semiconductor region, first semiconductor junction, and second semiconductor junction each has an intersection with the substantially planar semiconductor surface. The dielectric covers, and is in physical contact with, all of the intersections.

Mesa heterojunction phototransistor and method for making same

A sensor including an array of light sensitive pixels, each pixel including: at least one hetero-junction phototransistor having a floating base without contact, wherein each phototransistor is a mesa device having active layers exposed at side-walls of the mesa device; and at least one atomic layer deposited high-k dielectric material adjacent to and passivating at least the side-wall exposed active layers.

Photo-detector array, semiconductor image intensifier and methods of making and using the same

This invention discloses a variety of spectroscopy apparatus based on high sensitivity photo detector arrays and image sensors employing sidewall-passivated mesa-structure hetero-junction phototransistors (HPTs).

Spectroscopy apparatus based on hetero-junction phototransistors

A photodiode with a semiconductor intrinsic light absorption layer has at least one p-doped light absorption layer or an n-doped light absorption layer, and preferably both. The diode also has a cathode electrode and an anode electrode electrically coupled with the p-doped light absorption layer or the n-doped light absorption layer.

Doped absorption for enhanced responsivity for high speed photodiodes

This invention discloses the design of a semiconductor-based image intensifier chip and its constituent photodetector array device based on sidewall-passivated mesa heterojunction phototransistors (HPTs).

Growing community of inventors

Princeton, NJ, United States of America

Jie Yao