National Institute for Materials Science

Denka Company Limited

Jie Tang

Luchang Qin

Norio Shinya

Jinshi Yuan

Han Zhang

Shuai Tang

Kazuhiro Hono

Tadakatsu Ohkubo

Qian Cheng

Yasushi Yamauchi

Ta-Wei Chiu

Jun Uzuhashi

Kun Zhang

Hiromitsu Chatani

Daisuke Ishikawa

Daisuke Fujita

Feifei Zhang

Faxiang Qin

Jing Li

Yige Sun

Wataru Hayami

A manufacturing method for an electron source according to the present disclosure includes steps of: (A) cutting out a chip from a block of an electron emission material, (B) fixing a first end portion of the chip to a distal end of a support needle, and (C) sharpening a second end portion of the chip. The step (A) includes forming first and second grooves which constitute first and second surfaces of the chip in the block by irradiating a surface of the block with an ion beam. The first end portion of the chip includes the first surface and the second surface with the surfaces forming an angle α of 10 to 90°. The step (B) includes forming a joint between the distal end of the support needle and the first end portion of the chip.

Electron source, manufacturing method therefor, and device comprising electron source

The present invention provides an emitter made of a hafnium carbide (HfC) single crystal that stably emits electrons with high efficiency, a method for manufacturing the emitter, and an electron gun and an electronic device using the emitter. An emitter according to an embodiment of the present invention is an emitter including a nanowire, in which the nanowire is made of the hafnium carbide (HfC) single crystal, at least an end of the nanowire through which electrons are to be emitted is coated with hafnium oxycarbide (HfCO: 0<x≤0.5), and a field electron emission pattern of the end obtained by a field emission microscope (FEM) is a single spot.

Emitter, electron gun in which same is used, electronic device in which same is used, and method for manufacturing same

The present invention provides a simpler method for sharpening a tip of an emitter. In addition, the present invention provides an emitter including a nanoneedle made of a single crystal material, an emitter including a nanowire made of a single crystal material such as hafnium carbide (HfC), both of which stably emit electrons with high efficiency, and an electron gun and an electronic device using any one of these emitters. A method for manufacturing the emitter according to an embodiment of the present invention comprises processing a single crystal material in a vacuum using a focused ion beam to form an end of the single crystal material, through which electrons are to be emitted, into a tapered shape, wherein the processing is performed in an environment in which a periphery of the single crystal material fixed to a support is opened.

The purpose of the present invention is to provide an emitter capable of easily and highly efficiently emitting electrons, an electron gun using same, and an electronic device. This emitter is provided with a cathode holder, and an acicular substance secured to the cathode holder. An end, to which the acicular substance is secured, of the cathode holder is bent at &#x3b1; (&#x3b1;(&#xb0;) satisfies 5&#x3c;&#x3b1;&#x2264;70) that is an angle formed with respect to a cathode axis being the longitudinal direction of the cathode holder, the acicular substance is a single crystal nanowire or nanotube, and a relation L/T between the thickness T (&#x3bc;m) of the end of the cathode holder and a length L (&#x3bc;m) by which the acicular substance protrudes from the end satisfies 0.3&#x2264;L/T&#x2264;2.5.

Emitter, electron gun using same, and electronic device

The purpose of the present invention is to provide an emitter that is made of hafnium carbide (HfC) and that releases electrons in a stable and highly efficient manner, a method for manufacturing the emitter, and an electron gun and electronic device in which the emitter is used. In this nanowire equipped emitter, the nanowires are made of hafnium carbide (HfC) single crystal, the longitudinal direction of the nanowires match the &#x3c;100&#x3e; crystal direction of the hafnium carbide single crystal, and the end part of the nanowires through which electrons are to be released comprise the (200) face and the {310} face of the hafnium carbide single crystal, with the (200) face being the center and the {311} faces surrounding the (200) face.

The present invention provides an electrode that is excellent in conductivity and improves the power density and energy density of a power storage device, a method for manufacturing the same, and a power storage device using the same. The electrode of the present invention is an electrode containing at least a graphene aggregate having a particle diameter of 0.1 &#x3bc;m or more and less than 100 &#x3bc;m, wherein the graphene aggregate is an aggregate of graphene basic structures each having graphene layers among which a fibrous material is located. A method for manufacturing the electrode of the present invention comprises a step of mixing the above-mentioned graphene basic structures with at least a lower alcohol having 1 or more and 5 or less carbon atoms to form a graphene aggregate in which the graphene basic structures are aggregated, and a step of forming a film using the graphene aggregate.

Graphene-containing electrode, method for manufacturing same, and power storage device using same

The present invention provides a lithium ion capacitor (LIC) that achieves high specific capacity and high energy density. The lithium ion capacitor according to the present invention includes a cathode, an anode arranged apart from the cathode, and a Li-ion electrolyte with which a space between the cathode and the anode is filled. The cathode is made of a composite of graphene and carbon nanotubes, the anode is made of a Li-doped composite of graphene and carbon nanotubes, and the mass ratio of the anode to the cathode is larger than 0 and less than 1.0.

Lithium ion capacitor

Provided are a novel method for manufacturing a stack of carbon nanotube and graphene that can improve a capacitor characteristic, an electrode material including the stack of carbon nanotube and graphene, and an electric double-layer capacitor using the same. A method for manufacturing a stack of graphene and carbon nanotube includes a step of dispersing the graphene in an aqueous MOH solution (M represents an element selected from a group consisting of Li, Na, and K) to adsorb MOH on the graphene, a step of heating the graphene with MOH adsorbed thereon that is obtained in the adsorption step in vacuum or in an inert atmosphere in a temperature range of 400&#xb0; C. or more and 900&#xb0; C. or less to form pores in the graphene, and a step of dispersing the carbon nanotube and the graphene with the pores that are obtained in the step of forming the pores in a dispersion medium to stack the carbon nanotube and the graphene with the pores.

Method for manufacturing stack of graphene and carbon nanotube, electrode material including stack of graphene and carbon nanotube, and electric double-layer capacitor using the same

The problem addressed by the present invention is to provide an apparatus for preparing ultrathin graphene pieces capable of preparing ultrathin graphene pieces in which less than 10 pieces of graphene are overlapped in large quantities, a method for preparing ultrathin graphene pieces capable of preparing the ultrathin graphene pieces with high yield, an ultrathin graphene piece in which less than 10 pieces of graphene are overlapped, a capacitor having high performance by using the ultrathin graphene piece as an electrode, and an efficient method of manufacturing the capacitor. The above-described problem can be solved by using an apparatusfor preparing ultrathin graphene pieces, the apparatus comprising: a graphite electrode; a counter electrodewhich is made of graphite, a corrosion resistant alloy, or a precious metal; an electrolytic solutionin which one end sides of the two electrodesandare immersed; a containerwhich stores the electrolytic solution; and a power sourcewhich is connected to the two electrodesandvia wiringsand. The apparatus is also provided with a porous filterso as to cover at least the immersed part of the graphite electrodethat is immersed in the electrolytic solution

Ultrathin graphene piece, apparatus for preparing ultrathin graphene pieces, method for preparing ultrathin graphene pieces, capacitor, and method of manufacturing capacitor

The emitter of the present invention includes a nanowire. The nanowire is formed from a hafnium carbide (HfC) single crystal, and at least an end portion of the hafnium carbide single crystal, from which electrons are to be emitted, is covered with hafnium oxide (HfO). In the emitter, the thickness of the hafnium oxide may be 1 nm to 20 nm.

Emitter, electron gun using emitter, electronic apparatus using electron gun, and method of producing emitter

As an object to provide a lithium-ion supercapacitor having a high energy density and a high power density, capable of being charged and discharged many times, and having a long product life, there is provided a lithium-ion supercapacitor using a graphene/CNT composite electrode, the lithium-ion supercapacitor including: an anode; a cathode that is arranged to be separated from the anode; and a lithium ion electrolytic solution that fills in a space between the anode and the cathode, wherein either or both of the cathode and the anode are formed by a graphene/CNT composite, and a CNT concentration in the graphene/CNT composite is 17 wt % or more and 33 wt % or less.

Lithium-ion supercapacitor using graphene-CNT composite electrode and method for manufacturing the same

The object of the present invention is to provide linked stacks of reduced graphene, in which excellent electrical property on the surface of graphene may be utilized, a method for producing the same, powder comprising the same, and film comprising the same. The object may be solved by using linked stacks of partly reduced graphenecomprising two or more stacks of partly reduced graphenetolinked together, in which the stack of partly reduced graphenehas two or more sheets of partly reduced grapheneand a nanosubstanceheld between the sheets of partly reduced graphene, the partly reduced graphenehas no carbonyl groups and has carboxyl groupsand hydroxyl groups, and different stacks of partly reduced graphenetoare linked to each other by an ester bond

Linked stacks of partly reduced graphen, method for producing linked stacks of partly reduced graphene, power comprising linked stacks of partly reduced graphene, graphene electrode film, method for producing graphene elcetrode film, and graphene capacitor

A metal hexaboride nanowire such as LaBwith the formed metal-terminated (100) plane at the tip has a small work function, and can emit a very narrow electron beam from the (100) plane. In such emitters, contamination occurs in a very short time period, and the output current greatly decreases when used under low temperature. The cold field emitter of the present invention overcomes this problem with a stabilization process that exposes the metal-terminated (100) plane of the tip to hydrogen at low temperature, and can stably operate over extended time periods.

Growing community of inventors

Ibaraki, Japan

Jie Tang