Inphi Corporation

Marvell Asia Pte., Ltd.

Dongfang Jingyuan Electron Limited

Asml Us, Inc.

Zhongke Jingyuan Electron Limited

Jie Lin

Masaki Kato

Zhaoli Zhang

Zongchang Yu

Xiaoguang Tu

Brian Taylor

Bruno Tourette

Robb Johnson

Hong Cai

Hua-yu Liu

Yun Wang

Yuan He

Jihui Huang

Chunshu Zhang

Nathan Lin

A waveguide assembly includes first and second waveguides. The first waveguide includes silicon, first and second ends, an end member, and a tapered member. The end member extends from the first end. The tapered member extends from the end member to the second end. The second waveguide is optically coupled to and spaced away from the first waveguide. The second waveguide includes silicon nitride, first and second members, and a non-tapered member. The non-tapered member extends from the first member to the second member and in parallel with and opposing the tapered member. An effective refractive index of the non-tapered member matches an effective refractive index of the tapered member at a first plane. The first plane extends through the non-tapered member and the tapered member and perpendicular to a second plane. The second plane extends parallel to a direction of overlap between the first and second waveguides.

Silicon nitride-to-silicon waveguide assembly for broadband communication including concurrent propagation by TE0 and TM0 modes

An optical communication system includes a transceiver device and a passive multiplexer and demultiplexer (PMAD). The transceiver device transmits or receives optical signals. The PMAD has a Mach-Zehnder interferometer structure, is connected to the transceiver device, and operates as a passive multiplexer or a passive demultiplexer. The PMAD includes: a first arm including a first waveguide, the first arm having a first dimension; a second arm including i) a second waveguide, and ii) a third waveguide, the second waveguide having a second dimension, the third waveguide having a third dimension, the second dimension being based on the first dimension and finely adjusts at least one performance parameter of the passive multiplexer and demultiplexer, and the third dimension being based on the first dimension and coarsely adjusts the at least one performance parameter; and a splitter and a coupler that propagate the optical signals.

Optical communication systems and silicon photonics passive multiplexers and demultiplexers having Mach-Zehnder interferometer structures

A circuit for detecting an optical data signal includes a photonics substrate and first and second photodiodes formed in the photonics substrate. The first photodiode is configured to receive, via an input port formed in the photonics substrate, a first portion of the optical data signal and convert light power of the first portion of the optical data signal to generate a first current based on the optical data signal. The second photodiode is configured to output a second current without receiving any portion of the optical data signal. The second current corresponds to a dark current induced in the second photodiode. The circuit is configured to subtract the second current from the first current to generate an output signal corresponding to a power of the optical data signal without dark current induced in the first photodiode.

Circuit for detecting low-power optical data signal

A silicon optical modulator includes a silicon-on-insulator substrate and a first waveguide and a second waveguide arranged parallel to each other in the silicon-on-insulator substrate. The first waveguide includes a first PN junction. The second waveguide includes a second PN junction. At least one of the first PN junction and the second PN junction is disposed at an interface between a P type doped region and a N type doped region. The interface has an irregular shape that is not perpendicular to a plane in which the silicon-on-insulator substrate lies.

Silicon optical modulator, method for making the same

A silicon photonic device includes a silicon-on-insulator substrate, a waveguide, and a plate. The silicon-on-insulator substrate includes a silicon layer and a silicon dioxide layer. The waveguide is disposed on the silicon-on-insulator substrate. The silicon dioxide layer at least partially overlays the waveguide. The plate exhibits metallic characteristics and is at least partially embedded in the silicon dioxide layer of the silicon-on-insulator substrate. The plate is spaced apart from the waveguide and is configured to mitigate transverse magnetic emission propagating through the waveguide.

TE polarizer based on SOI platform

An apparatus for monitoring strain in an optical chip in silicon photonics platform. The apparatus includes a silicon photonics substrate shared with the optical chip. Additionally, the apparatus includes an optical input configured in the silicon photonics substrate to supply an input signal of a single wavelength. The apparatus further includes a first waveguide arm and a second waveguide arm embedded in the silicon photonics substrate to form an on-chip interferometer. The second waveguide arm forms a delay line being disposed at a region in or adjacent to the optical chip. The on-chip interferometer is configured to generate an interference pattern serving as an indicator of strain distributed at the region in or adjacent to the optical chip. The interference pattern is caused by a temperature-independent phase shift at the single wavelength of the interferometer between the first waveguide arm and the second waveguide arm.

Temperature insensitive distributed strain monitoring apparatus and method

A method for making a multimode interference (MMI) coupler with an arbitrary desired splitting ratio includes forming a thin-film of silicon-nitride material overlying a SOI substrate. The method further includes obtaining geometric parameters of a standard MIMI coupler including a rectangular MMI block and one input port and two output ports in taper shape with one of standard splitting ratios under self-imaging principle which is close to the desired splitting ratio. Additionally, the method includes tunning the input port to an off-center position at front edge of the MMI block. The method further includes making a first output port to a first off-center position flushing with a side edge of the MMI block, adjusting a second output port to a second off-center position. The method includes tunning the MMI block to obtain optimized geometric parameters for approaching the selected arbitrary splitting ratio, and etching the thin-film of silicon-nitride material.

Wide-band multimode interference coupler with arbitrary power splitting ratio and method for making the same

A method for making a pair of photodiodes to detect low-power optical signal includes providing a waveguide including one or more branches in a silicon photonics substrate to deliver an input optical signal to the silicon photonics integrated circuit; forming a pair of nearly redundant photodiodes in silicon photonics platform in the silicon photonics substrate. coupling a first one of the pair of nearly redundant photodiodes optically to each of the one or more branches for receiving the input optical signal combined from all of the one or more branches; coupling a second one of the pair of nearly redundant photodiodes electrically in series to the first one of the pair of nearly redundant photodiodes; and drawing a current from the first one of the pair of nearly redundant photodiodes under a reversed bias voltage applied to the pair of nearly redundant photodiodes.

Method for detecting low-power optical signal with high sensitivity

An optical splitter includes a silicon-on-insulator substrate having a cladding layer. The optical splitter also includes a first waveguide of a first width and a first length buried in the cladding layer and a second waveguide of a second width and a second length buried in the cladding layer disposed in close proximity of the first waveguide by a gap distance. A ratio of the second width over the first width is configured to be smaller than 1 while the first length, the second length, and the gap distance are configured to allow evanescent coupling of a first confined mode of an optical signal in the first waveguide into the second waveguide with a certain splitting ratio being achieved in a range of 1% to &#x3c;50% substantially unchanged over a broadband of wavelengths.

Colorless splitter based on SOI platform

The present application discloses a polarization beam splitter (PBS). The PBS includes a silicon substrate and a planar structure formed thereon characterized by an isosceles trapezoid shape with a first parallel side and a second parallel side connected by two tapered sides. The first parallel side has longer width than the second parallel side, both of which is separated by a length no greater than 100 &#x3bc;m along a line of symmetry bisecting the pair of parallel sides. The PBS further includes a pair of input ports coupled to the first parallel side and a pair of output ports coupled to the second parallel side. The planar structure is configured to receive an input light wave of any wavelength in C-band via one input port and split to a TE-mode light wave and a TM-mode light wave respectively outputting to the pair of output ports.

Silicon-based polarization beam splitter

The present application discloses a Transverse Electric (TE) polarizer. The TE polarizer includes a semiconductor substrate having an oxide layer. The TE polarizer further includes a waveguide embedded in the oxide layer. Additionally, the TE polarizer includes a plate structure embedded in the oxide layer substantially in parallel to the waveguide with a gap distance. In an embodiment, the plate structure induces an extra transmission loss to a Transverse Magnetic (TM) mode in a light wave traveling through the waveguide.

A silicon optical modulator includes two silicon waveguide branches coupled between a 2&#xd7;2 splitter at a common input end and a 2&#xd7;2 splitter at a common output end. The modulator further includes at least one of the two silicon waveguide branches comprising a ridge-shape having a central portion of a height sandwiched in a width direction by a first side portion and a second side portion throughout a length of the waveguide. The central portion in each cross-section plane thereof includes a p-region and a n-region separated by a continuous borderline to form an irregular shaped PN junction. The borderline is configured to have at least one section-line with a sloped angle relative to the width direction and have a total border-length substantially longer than the height. The p-region is in contact with the first side portion and the n-region is in contact with the second side portion.

Methods and systems for identifying defects in an integrated circuit are provided. The method includes receiving input data of a pattern associated with an integrated circuit, determining feature data associated with features of the pattern using the input data, determining defect detection results associated with the pattern using the input data, the feature data, and defect detection techniques, and determining a defect identification result using the defect detection results. The system includes a processor and a memory. The memory is coupled to the processor and configured to store a set of instructions to receive input data of a pattern associated with an integrated circuit, determine feature data associated with features of the pattern using the input data, determine defect detection results associated with the pattern using the input data, the feature data, and defect detection techniques, and determine a defect identification result using the defect detection results.

Method and system for identifying defects of integrated circuits

Methods, apparatuses, and systems for determining a binary mask pattern from a pixelated mask pattern include: determining, by a processor, based on a fast marching method (FMM), arrival values for pixels of a portion of the pixelated mask pattern; determining the binary mask pattern based on the arrival values; and updating at least one of the arrival values based on a comparison between a design pattern corresponding to the pixelated mask pattern and a substrate pattern simulated based on the binary mask pattern.

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Santa Clara, CA, United States of America

Jie Lin