Boe Technology Group Co., Ltd.

Beijing Boe Technology Development Co., Ltd.

Apollo Intelligent Driving Technology (beijing) Co., Ltd.

Baidu Online Network Technology (beijing) Co., Ltd.

Beijing Baidu Netcom Science and Technology Co., Ltd.

Beijing Baidu Netcom Science Technology Co., Ltd

Fuzhou Boe Optoelectronics Technology Co., Ltd.

Academy of Military Medical Sciences

Beijing Weilion New Energy Technology Co., Ltd

Jie Huang

Ce Ning

Zhengliang Li

Hehe Hu

Nianqi Yao

Jiayu He

Kun Zhao

Feifei Li

Qi Qi

Liping Lei

Feng Guan

Fengjuan Liu

Xue Ping Liu

Tong Wu

Tianmin Zhou

Zhi Wang

Gaifan Li

Renlan Cai

Yijun Yuan

Hui Wang

Zhanfeng Cao

Feng Qu

Tao Li

Yu Liu

Ting Chen

Hong Li

Shiyu Song

Jiaxiang Zhang

Ke Wang

Jiushi Wang

Wenjun Li

Fangfang Dong

Yongyi Sun

Yan Feng

Pengfei Yuan

Xiaochun Xu

Jianxin Wang

Huigen Yu

Yuelin Wu

Junxiang Lu

Jianshu Wang

Zhongpeng Tian

Song Hu

Yajiao Zhang

Niangi Yao

Xiangyu Fu

Zhenyuan Miao

Deyan Luo

Chunlin Zhuang

Peitao Zhu

Xiaowu Sun

Provided is a display substrate including a substrate and a plurality of light emitting units and a plurality of light detection units located on the substrate, At least one light emitting unit includes a light emitting element and a pixel circuit connected to the light emitting element, and at least one light detection unit includes an optical sensing element and a light emitting detecting circuit connected to the optical sensing element. At least one inorganic hydrogen barrier layer is arranged on one side of the optical sensing element close to the substrate. The light emitting element has a first light emitting region and a second light emitting region, the first light emitting region of the light emitting element emits light from a side away from the substrate, and the second light emitting region of the light emitting element emits light from a side close to the substrate.

Display substrate, manufacturing method thereof, and display apparatus

Provided are a thin film transistor, a display substrate and a display device, the thin film transistor includes: a gate on a base substrate; an active layer between the gate and the base substrate, the active layer includes a source contact portion, a drain contact portion and a middle portion therebetween, orthographic projections of the middle portion and the gate on the base substrate overlaps to form a first overlapping region, a material of the middle portion includes a metal oxide containing a doped element, a dissociation energy of the doped element from an oxygen element is greater than 500 Kj/mol; a source connected to the source contact portion and a drain connected to the drain contact portion, a ratio of an area of the orthographic projection of the gate on the base substrate to an area of the first overlapping region is less than or equal to 3.

Thin film transistor, display substrate and display device

A circuit board includes a substrate, a first conductive layer, a first insulating layer and a second conductive layer. The first conductive layer includes a plurality of first conductive portions. The second conductive layer includes a plurality of second conductive portions. A second conductive portion passes through a first via hole in the first insulating layer to be in electrical contact with a first conductive portion. The first conductive layer and the second conductive layer each include at least one main conductive layer, which is capable of creating a first intermetallic compound with solder. At least one of the first conductive layer and the second conductive layer further includes a stop layer capable of creating a second intermetallic compound with the solder. A rate of a reaction between the stop layer and the solder is lower than a rate of a reaction between the main conductive layer and the solder.

Circuit board, light-emitting substrate, backlight module, and display apparatus

Embodiments of the present disclosure provide an array substrate and a display apparatus. The array substrate includes: a base substrate; a conductive layer located on the base substrate, where a material of the conductive layer includes copper; and an oxidization protective layer, located on a side, facing away from the base substrate, of the conductive layer; where a material of the oxidization protective layer includes tungsten.

Array substrate and display apparatus comprising oxidization protective layer on copper conductive layer

A method and an apparatus for generating a high-precision map includes sampling road data for generating the high-precision map, and obtaining a sampling trajectory, wherein the sampling trajectory comprises sampling location points and road data corresponding to the sampling location points, obtaining a navigation map comprising first road elements, and generating a target high-precision map by associating the first road elements with the high-precision map based on the sampling trajectory.

Method and apparatus for generating high-precision map, and storage medium

A system used to supplement an electrode with lithium or sodium, includes an electrode treatment unit including metal source-unwinding shafts (), an electrode-unwinding shaft (), and press roller devices () configured to allow physically adhesive contact of the electrode with the metal source, so that the electrode () is supplemented with the metal from metal sources (); a temperature control treatment device () configured to improve the quality and uniformity of metal supplement; and a stripping unit configured to peel off the metal source that has been rolled by the press roller devices (), wherein the metal sources () are a ribbon-shaped lithium source or a ribbon-shaped sodium source. This system and the method using the system can produce an electrode having high cycle efficiency.

System for preparing electrode having high cycle efficiency, method for preparing electrode having high cycle efficiency, and application thereof

A thin film transistor includes a gate electrode, an active layer, a gate insulating layer located between the gate electrode and the active layer, and a source electrode and a drain electrode electrically connected to the active layer. The active layer includes a channel layer and at least one channel protection layer; a material of each of the channel layer and the at least one channel protection layer is a metal oxide semiconductor material. The at least one channel protection layer is a crystallizing layer, and metal elements of the at least one channel protection layer include non-rare earth metal elements including In, Ga, Zn and Sn.

Thin film transistor, semiconductor substrate and X-ray flat panel detector

The disclosure provides a thin-film transistor, a manufacturing method thereof, an array substrate and a display panel, and belongs to the technical field of thin-film transistor devices. The thin-film transistor includes a base substrate, an active layer on the base substrate including a plurality of semiconductor nanowires, and a plurality of guiding projections on the base substrate which extend along a first direction and are arranged at intervals and each of which includes two side walls extending along the first direction, and the semiconductor nanowire extends along a side wall of the guiding projection. In the thin-film transistor, since the semiconductor nanowires are used as the active layer, mobility and concentration of carriers in the thin-film transistor can be effectively increased and therefore performance of the thin-film transistor can be improved. A length of the semiconductor nanowire is not limited, and a size of the thin-film transistor is not limited.

Thin-film transistor, manufacturing method thereof, array substrate and display panel

A display substrate includes: a base substrate; a metal light-shielding layer disposed on the base substrate; a plurality of pixel units disposed on the base substrate; a plurality of first thin film transistors disposed on the metal light-shielding layer and configured to drive the pixel units; a plurality of photodiodes disposed on the metal light-shielding layer and configured to convert light emitted from the pixel units into photocurrents, each of the photodiodes including a first electrode; a plurality of second thin film transistors disposed on the metal light-shielding layer (A) and configured to receive the photocurrents, so that light emission of the pixel units are compensated according to the photocurrents. Output terminals of the first thin film transistors are electrically connected to the metal light-shielding layer, and a gate of the first thin film transistor is electrically connected to the first electrode. Further disclosed are a display panel and a display substrate manufacturing method.

Display substrates, display panels and display substrate manufacturing methods

A thin film transistor, a manufacturing method thereof, an array substrate and an electronic device arc provided. The thin film transistor includes an active layer including multiple oxide layers which includes a channel layer, a transition layer and a first barrier layer, the channel layer is an layer with a highest carrier mobility, the channel layer is a crystalline or amorphous oxide layer, the transition layer is in direct contact with the channel layer, the first barrier layer is an outermost oxide layer, the first barrier layer and the transition layer are both crystalline oxide layers; a crystallization degree of the first barrier layer and a crystallization degree of the transition layer are greater than a crystallization degree of the channel layer, and a band gap of the first barrier layer and a band gap of the transition layer are larger than a band gap of the channel layer.

Thin film transistor and array substrate each having active layer comprising multiple oxide layers arranged in a stack

A thin film transistor, a manufacturing method thereof, a display substrate, and a display device are provided. The thin film transistor includes: a substrate, an active layer, a gate, a source and a drain. The active layer is arranged on the substrate and formed as a grid, including silicon nanowires extending along a first direction, the active layer includes source and drain regions oppositely arranged along the first direction, and a channel region located therebetween. The gate is arranged on the substrate, and an orthographic projection of the gate onto the substrate overlaps with orthographic projections for silicon nanowires in the channel region onto the substrate. The source and drain are arranged on the substrate, the source contacts silicon nanowires in the source region, and the drain contacts silicon nanowires in the drain region.

Thin film transistor with silicon nanowire channel, display substrate, and display device

The present disclosure relates to the field of display technologies, and in particular to a thin film transistor and a method for manufacturing the same, an array substrate and a display device. An active layer of the thin film transistor includes at least two metal oxide semi-conductor layers, the at least two metal oxide semi-conductor layers include a channel layer and a first protection layer, and metals in the channel layer include tin, and at least one of indium, gallium and zinc. The first protection layer includes praseodymium used to absorb photo-generated electrons from at least one of the channel layer and the first protection layer which is under light irradiation and reduce a photo-generated current caused by the light irradiation.

Thin film transistor and method for manufacturing the same, array substrate and display device

An array substrate includes a substrate, the array substrate includes a display region and a detection region. And the detection region includes a thin film transistor located on the substrate and a photodiode located on one side of the thin film transistor away from the substrate, and the array substrate further includes a first inorganic protective layer, an organic protective layer and a second inorganic protective layer located between the thin film transistor and the photodiode. And the first inorganic protective layer, the organic protective layer and the second inorganic protective layer are stacked in sequence in a direction away from the substrate, and an orthographic projection of the photodiode on the substrate is within the range of the orthographic projection of the organic protective layer on the substrate.

Array substrate, flat panel detector, and method for manufacturing array substrate

An organic electroluminescent display substrate is provided, which includes a base substrate, and a light-emitting unit and a light-sensing unit arranged on the base substrate, wherein the light-sensing unit is arranged on a light-emitting side of the light-emitting unit, and configured for sensing an intensity of light emitted from the light-emitting unit; a first planarization layer is arranged between the light-sensing unit and the light-emitting unit; the light-sensing unit comprises a first thin film transistor and a photosensitive sensor arranged sequentially in that order in a direction away from the base substrate, and a second planarization layer is arranged between the photosensitive sensor and the first thin film transistor. A display panel, a display device and a method for manufacturing the organic electroluminescent display substrate are further provided.

Organic electroluminescent display substrate and manufacturing method, display panel and display device

A method and apparatus for updating a point cloud. The method may include: determining an area point cloud matching newly added point clouds from historical point clouds to be updated based on a set formed by a pose of a point cloud acquisition device acquiring the newly added point clouds. The method may further include: merging the newly added point clouds into the matched area point cloud to obtain merged historical point clouds. The method may further include: performing global optimization on the merged historical point clouds based on a pose of each point cloud in the merged historical point clouds to obtain updated point clouds.

Method and apparatus for updating point cloud

Growing community of inventors

Beijing, China

Jie Huang