Zhongke Jingyuan Electron Limited

Chinese Academy of Sciences

Jie Guo

Shiguang Li

Xin Wang

Yu Zou

Shengwen Qi

Bowen Zheng

Songfeng Guo

Xiaolin Huang

Haijun Zhao

Guangming Luo

Lei Xue

Ning Liang

Zhiqing Li

Libo Jiang

Luqing Zhang

Mingcheng Zong

A rock mass shear test system for high-energy accelerator computed tomography (CT) scanning includes double horizontal loading devices, a first bearing device for bearing a static shear box, a second bearing device for bearing a dynamic shear box, and a normal loading device, etc. In the test, the double horizontal loading devices simultaneously apply an identical loading force to the rock mass, and the normal loading device applies a shear force to the rock mass. The double horizontal loading devices are provided in parallel and spaced apart, a loading force is applied in the horizontal direction, and a shear force is applied in the vertical direction, so that the loading cylinder and the rock mass sample are effectively prevented from interfering with each other during the accurate scanning process of the shearing progressive failure process of the rock mass.

Rock mass shear test system for high-energy accelerator computed tomography (CT) scanning

A method, an apparatus, and a non-transitory computer-readable medium for measuring a height of a sample includes: receiving, by an optical sensor having pixels, an optical grating image of an illuminated optical grating reflected by a surface of the sample; determining, by a processor, a digital grating image by keeping values of first pixels of the optical grating image and resetting values of second pixels of the optical grating image; and determining the height based on a relationship between an integrated intensity of a portion of the digital grating image and the height.

Sample height measurement using digital grating

Methods and apparatuses for laser-assisted electron-beam inspection (EBI) are provided. The apparatus includes an EBI device and a laser illumination device. The EBI device includes an e-beam source configured to emit an incident e-beam, a deflector configured to deflect the incident e-beam to be projected onto a surface of a semiconductor device, and an electron detector configured to detect emergent electrons generated by the incident e-beam projected onto the surface. The laser illumination device includes a laser source configured to generate a laser, and a guiding device configured to guide the laser to be projected onto the semiconductor device. The laser changes the emergent electrons to cause, in a positive mode of the EBI apparatus, a PN junction of an NMOS of the semiconductor device to be in a conduction state.

Laser-assisted electron-beam inspection for semiconductor devices

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Beijing, China

Jie Guo