Seagate Technology Incorporated

Jie Gong

Michael C Kautzky

Tong Zhao

Michael Allen Seigler

Yuhang Cheng

Sarbeswar Sahoo

Steven Carl Riemer

Ibro Tabakovic

Scott Michael Franzen

Kurt W Wierman

Justin Glen Brons

Ed F Rejda

Steve C Riemer

YongJun Zhao

Sethuraman Jayashankar

Venkatram Venkatasamy

John A Rice

Mark Thomas Kief

Mark Ostrowski

Hua Zhou

Dimitar Velikov Dimitrov

Wei Tian

Ming Sun

Xiaomin Yang

Martin Giles Blaber

Robert Earl Rottmayer

Sharat Batra

Thomas William Clinton

Andrew Joseph Boyne

Lien Lee

Lijuan Zou

Shuaigang Xiao

Dongsung Hong

Xuelian Xu

Hilton Erskine

Jiaoming Qiu

Hieu Lam

Christopher James Rea

Ibro Takakovic

Jeffery James Walter

Haiyu Fang

Described are write head constructions that may be useful in magnetic recording, and in particular for heat-assisted magnetic recording. Such write head constructions include a heat channel abutted to the write pole to facilitate transferring heat away from the write pole and other components near the media-facing surface of the write head. To help prevent diffusion of materials between the heat channel and the write pole, a diffusion barrier layer is provided. Properties such as thermal expansion mismatch, the presence of oxide in the diffusion barrier layer, and so forth, may lead to undesired delamination of the heat channel during fabrication of the write head and/or during operation. In accordance with the present disclosure, an adhesion layer may be provided between the diffusion barrier layer and the heat channel to improve adhesion of the heat channel and effectively reduce delamination.

Forming a heat channel on a magnetic write pole using an adhesion layer

Described are electrodeposition methods, and materials and structures prepared by electrodeposition methods, and devices prepared from the electrodeposited materials.

Electrodeposited materials and related methods

A data storage device comprising a recording head having a high damping magnetic alloy layer including at least one magnetic alloy element, and a 5d transition element; the high damping magnetic alloy layer having a mixed face-centered cubic (fcc) and body-centered cubic (bcc) crystal structure, and the mixed fcc and bcc crystal structure comprising fcc and bcc grains, with the bcc grains having an elongated shape relative to the fcc grains, a larger size than the fcc grains, and slip deformation, thereby providing the high damping magnetic alloy layer with a damping constant of up to about 0.07.

Electrodeposition of high damping magnetic alloys

A method includes immersing a wafer in an electrolyte including a plurality of compounds having elements of a thermally stable soft magnetic material. The method also includes applying a combined stepped and pulsed current to the wafer when the wafer is immersed in an electrolyte. The wafer is removed from the electrolyte when a layer of the thermally stable soft magnetic material is formed on the wafer.

Electrodeposition of thermally stable alloys

A method includes immersing a wafer in an electrolyte including a plurality of compounds having elements of a high damping magnetic alloy with very low impurity and small uniform grain size. The method also includes applying a pulsed current with a certain range of duty cycle and pulse length to the wafer when the wafer is immersed in an electrolyte. The wafer is removed from the electrolyte when a layer of the high damping magnetic alloy is formed on the wafer.

Devices having an air bearing surface (ABS), the device including a near field transducer, the near field transducer having a peg and a disc, the peg having a region adjacent the ABS, the peg including a plasmonic material selected from gold (Au), silver (Ag), copper (Cu), ruthenium (Ru), rhodium (Rh), aluminum (Al), or combinations thereof; and at least one other secondary atom selected from germanium (Ge), tellurium (Te), aluminum (Al), antimony (Sb), tin (Sn), mercury (Hg), indium (In), zinc (Zn), iron (Fe), copper (Cu), manganese (Mn), silver (Ag), chromium (Cr), cobalt (Co), and combinations thereof, wherein a concentration of the secondary atom is higher at the region of the peg adjacent the ABS than a concentration of the secondary atom throughout the bulk of the peg. Methods of forming NFTs are also disclosed.

Near-field transducer having secondary atom higher concentration at bottom of the peg

A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof; erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.

Materials for near field transducers and near field transducers containing same

Methods of forming near field transducers (NFTs) including electrodepositing a plasmonic material.

Near field transducers including electrodeposited plasmonic materials and methods of forming

A device including a near field transducer, the near field transducer including gold (Au), silver (Ag), copper (Cu), or aluminum (Al), and at least two other secondary atoms, the at least two other secondary atoms selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), manganese (Mn), tellurium (Te), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), germanium (Ge), hydrogen (H), iodine (I), rubidium (Rb), selenium (Se), terbium (Tb), nitrogen (N), oxygen (O), carbon (C), antimony (Sb), gadolinium (Gd), samarium (Sm), thallium (Tl), cadmium (Cd), neodymium (Nd), phosphorus (P), lead (Pb), hafnium (Hf), niobium (Nb), erbium (Er), zinc (Zn), magnesium (Mg), palladium (Pd), vanadium (V), zinc (Zn), chromium (Cr), iron (Fe), lithium (Li), nickel (Ni), platinum (Pt), sodium (Na), strontium (Sr), calcium (Ca), yttrium (Y), thorium (Th), beryllium (Be), thulium (Tm), erbium (Er), ytterbium (Yb), promethium (Pm), neodymium (Nd cobalt (Co), cerium (Ce), lanthanum (La), praseodymium (Pr), or combinations thereof.

Materials for near field transducers, near field tranducers containing same, and methods of forming

Devices having an air bearing surface (ABS), the devices include a write pole; a near field transducer (NFT) including a peg and a disc, wherein the peg is at the ABS of the device; an overcoat, the overcoat including a low surface energy layer.

Devices including metal layer

Near field transducer having secondary atom higher concentration at bottom of the peg

Devices having an air bearing surfaces (ABS), the devices including a near field transducer (NFT) that includes a disc having a front edge; a peg, the peg having a front surface at the air bearing surface of the apparatus, an opposing back surface, a top surface that extends from the front surface to the back surface, two side surfaces that expend from the front surface to the back surface and a bottom surface that extends from the front surface to the back surface; and a barrier layer, the barrier layer separating at least the back surface of the peg from the disc and the barrier layer having a thickness from 10 nm to 50 nm.

Near field transducers (NFTS) including barrier layer and methods of forming

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Eden Prairie, MN, United States of America

Jie Gong