Qualcomm Incorporated

Jie Deng

Giridhar Nallapati

Stanley Seungchul Song

Junjing Bao

Haining S Yang

Bin Yang

John Jianhong Zhu

Periannan Chidambaram

Jun Yuan

Lixin Ge

Bo Yu

Jiefeng Jeff Lin

Aspects disclosed herein include circuits employing a double diffusion break (DDB) and a single diffusion break (SDB) in different type diffusion regions, and related fabrication methods are disclosed. In exemplary aspects disclosed herein, either a DDB or a SDB is formed in the N-type diffusion region(s) and the opposing type diffusion, either a SDB or DDB, is formed in the P-type diffusion region(s). Forming different diffusion breaks between a DDB and a SDB in different diffusion regions of the circuit can be employed to induce channel strain that will increase carrier mobility of either P-type or N-type semiconductor devices formed in respective P-type or N-type diffusion region(s), while avoiding or reducing such induced channel strain in either P-type or N-type semiconductor devices formed in respective P- or N-type diffusion region(s) that may degrade carrier mobility.

Circuits employing a double diffusion break (DDB) and single diffusion break (SDB) in different type diffusion region(s), and related fabrication methods

An apparatus includes at least one first device having a first contacted poly pitch (CPP) and a first contact. The first contact has a first contact size. The apparatus also includes at least one second device having a second CPP, a second contact, and a contact liner. The second CPP is larger than the first CPP. The second contact size is constrained by the contact liner, such that the contact liner reduces a contact opening for the second contact.

Contact liner to enable different CPP devices

A semiconductor device includes a contact via and a metal interconnect on the contact via. The metal interconnect has a portion extending in a lengthwise direction that is wrapped around and in contact with a sidewall of the contact via. Along a widthwise direction, the metal interconnect does not contact the sidewall of the contact via.

Structure and method of metal wraparound for low via resistance

Middle-of-line (MOL) metal resistor temperature sensors for localized temperature sensing of active semiconductor areas in integrated circuits (ICs) are disclosed. One or more metal resistors are fabricated in a MOL layer in the IC adjacent to an active semiconductor area to sense ambient temperature in the adjacent active semiconductor area. Voltage of the metal resistor will change as a function of ambient temperature of the metal resistor, which can be sensed to measure the ambient temperature around devices in the active semiconductor layer adjacent to the metal resistor. By fabricating a metal resistor in the MOL layer, the metal resistor can be localized adjacent and close to semiconductor devices to more accurately sense ambient temperature of the semiconductor devices. The same fabrication processes used to create contacts in the MOL layer can be used to fabricate the metal resistor.

Middle-of-line (MOL) metal resistor temperature sensors for localized temperature sensing of active semiconductor areas in integrated circuits (ICs)

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San Diego, CA, United States of America

Jie Deng