Applied Materials, Inc.

Toshiba Techno Center Inc.

Jie Cui

Olga Kryliouk

Jie Su

Sang Won Kang

Tuoh-Bin Ng

Methods of epitaxy of gallium nitride, and other such related films, and light emitting diodes on patterned sapphire substrates, and other such related substrates, are described.

Formation of group III-V material layers on patterned substrates

A substrate for a light emitting diode (LED) can have one or more trenches formed therein so as to mitigate stress build up within the substrate due to mismatched thermal coefficients of expansion between the substrate and layers of material, e.g., semiconductor material, formed thereon. In this manner, the likelihood of damage to the substrate, such as cracking thereof, is substantially mitigated.

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Albany, CA, United States of America

Jie Cui