Taiwan Semiconductor Manufacturing Comp. Ltd.

Jie-Cheng Deng

Yi-Jen Chen

Horng-Huei Tseng

Tin-Hao Kuo

Chih-Horng Chang

Ying-Yu Chen

Chia-Yang Liao

A semiconductor structure includes a first fin, a second fin, a first gate, a second gate, at least one spacer, and an insulating structure. The first gate is present on the first fin. The second gate is present on the second fin. The spacer is present on at least one side wall of at least one of the first gate and the second gate. The insulating structure is present between the first fin and the second fin, in which the spacer is substantially absent between the insulating structure and said at least one of the first gate and the second gate.

Semiconductor structure and manufacturing method thereof

A surface treatment and an apparatus for semiconductor packaging are provided. A surface of a conductive layer is treated to create a roughened surface. In one example, nanowires are formed on a surface of the conductive layer. In the case of a copper conductive layer, the nanowires may include a CuO layer. In another example, a complex compound is formed on a surface of the conductive layer. The complex compound may be formed using, for example, thiol and trimethyl phosphite.

Surface treatment method and apparatus for semiconductor packaging

A semiconductor device is disclosed. The semiconductor device includes a channel region, extending along a direction, that has a U-shaped cross-section; a gate dielectric layer wrapping around the channel region; and a gate electrode wrapping around respective central portions of the gate dielectric layer and the channel region.

GAA FET with U-shaped channel

A surface treatment and an apparatus for semiconductor packaging are provided. In an embodiment, a surface of a conductive layer is treated to create a roughened surface. In one example, nanowires are formed on a surface of the conductive layer. In the case of a copper conductive layer, the nanowires may include a CuO layer. In another example, a complex compound is formed on a surface of the conductive layer. The complex compound may be formed using, for example, thiol and trimethyl phosphite.

GAA FET with u-shaped channel

FinFET devices and methods of forming the same are disclosed. One of the FinFET devices includes a substrate, multiple gates and a single spacer wall. The substrate is provided with multiple fins extending in a first direction. The multiple gates extending in a second direction different from the first direction are provided respectively across the fins. Two of the adjacent gates are arranged end to end. The single spacer wall extending in the first direction is located between the facing ends of the adjacent gates and is in physical contact with a gate dielectric material of each of the adjacent gates.

FinFET devices and methods of forming the same

FinFET devices and methods of forming the same are disclosed. One of the FinFET devices includes a substrate, multiple gates and an insulating wall. The substrate is provided with multiple fins extending in a first direction. The multiple gates extending in a second direction different from the first direction are provided respectively across the fins. Two of the adjacent gates are arranged end to end. The insulating wall extending in the first direction is located between the facing ends of the adjacent gates and is in physical contact with a gate dielectric material of each of the adjacent gates.

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Taipei, Taiwan

Jie-Cheng Deng