Silego Technology Inc.

Applied Materials, Inc.

Miradia Inc.

Jie Chen

Kuang-Yu Chen

Chen Wang

Ting-Yen Chiang

Joe Froniewski

John Othniel McDonald

Chen-Yu Wang

Ling Chen

Peijun Ding

Xiao Charles Yang

Dongmin Chen

Suraj Rengarajan

Shoucheng Zhang

Tram Vo

A four pin integrated circuit MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) load switch is disclosed that provides full features including adjustable ramp time/rate, adjustable discharge time/rate, temperature control, over-current control, and short circuit protection. In some embodiments, the adjustable ramp is based on the voltage or current input into the integrated circuit.

Reduced pin full feature load switch

A clock driving circuit and a method of driving a plurality of output lines for a PC architecture are disclosed. The clock driving circuit includes a clock generating circuit coupled to an output buffer for the PC having a plurality of output lines connected to a plurality of output loads having output load impedances. The output lines are driven differentially at an output voltage lower than a supply voltage. The circuit includes a voltage node having a voltage node impedance. The voltage node is maintained at substantially the output voltage. The circuit includes a current sinking transistor that sinks current from the voltage node. The current sinking transistor is operated in a linear region characterized by an ohmic resistance determined by the size of the current sinking transistor. The impedance of the voltage node is matched to one of the load impedances by sizing the current sinking transistor.

Reduced power output buffer

A method of sputtering a copper seed layer and the target used therewith. The copper included in the sputtering target includes a first dopant reactive with copper and a second dopant unreactive with copper. Examples of the first dopant include Ti, Mg, and Al. Examples of the second dopant include Pd, Sn, In, Ir, and Ag. The amount of the first dopant may be determined by testing stress migration and that of the second dopant by testing electromigration.

Multi-component doping of copper seed layer

An electro-mechanical system, the system comprising a first surface with an electrically activated electrode coupled to the first surface and to an electrical source to receive a first signal. The system further comprising a moveable structure suspended at a first height over the first surface, the moveable structure being attracted toward the electrode based upon the first signal, and the moveable structure being attracted toward the first surface through an interaction with one or more parasitic forces. The systems also provides a landing post coupled to the moveable structure, the landing post being adapted to contact the base of the landing post against the first surface when the electrically activated electrode receives a predetermined voltage bias associated with the first signal, thereby maintaining an outer portion of the moveable structure free from physical contact with the first surface and reducing a magnitude of one or more parasitic forces.

Method and apparatus to reduce parasitic forces in electro-mechanical systems

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Saratoga, CA, United States of America

Jie Chen