Globalfoundries Singapore Pte. Ltd.

Globalfoundries Inc.

Jie Chen

Roderick Miller

Chang Yong Xiao

Xusheng Kevin Wu

Manfred Eller

Changyong Xiao

Wanxun He

A method is provided for forming sandwich damascene resistors in MOL processes and the resulting devices. Embodiments include forming on a substrate a film stack including an interlayer dielectric (ILD), a first dielectric layer, and a sacrifice layer (SL); removing a portion of the SL and the first dielectric layer, forming a first cavity; conformally forming a layer of resistive material in the first cavity and over the SL; depositing a second dielectric layer over the layer of resistive material and filling the first cavity; and removing the second dielectric layer, the layer of resistive material not in the first cavity, and at least a partial depth of the SL

Sandwich damascene resistor

A method for forming FinFETs with reduced series resistance includes providing an intermediate semiconductor structure comprising a semiconductor substrate, a fin disposed on the semiconductor substrate, a gate disposed over a first portion of the fin, and a first sidewall spacer disposed over the fin and adjacent to the gate, increasing epitaxially the thickness of a second portion of the fin disposed outside the gate and the first sidewall spacer, and forming a second sidewall spacer disposed over the second portion of the fin and adjacent to the first sidewall spacer. A thickness of the second portion of the fin disposed under the second spacer is equal to or greater than a thickness of the first portion of the fin disposed under the gate.

Methods for forming FinFETs with reduced series resistance

A method is provided for forming sandwich damascene resistors in MOL processes and the resulting devices. Embodiments include forming on a substrate a film stack including an interlayer dielectric (ILD), a first dielectric layer, and a sacrifice layer (SL); removing a portion of the SL and the first dielectric layer, forming a first cavity; conformally forming a layer of resistive material in the first cavity and over the SL; depositing a second dielectric layer over the layer of resistive material and filling the first cavity; and removing the second dielectric layer, the layer of resistive material not in the first cavity, and at least a partial depth of the SL.

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Mechanicville, NY, United States of America

Jie Chen