Innogrit Technologies Co., Ltd.

Nyquist Semiconductor Limited

Leanics Corporation

Marvell International Limited

Comm Vault Systems, Inc.

Jie Chen

Zining Wu

Bo Fu

Lin Chen

Gang Zhao

Chenrong Xiong

Wei Jiang

Xiaoming Zhu

Chung-Li Wang

Yuan-Mao Chang

Cheng-Yun Hsu

Han Zhang

Keshab K Parhi

Qun Zhao

Tao Wei

Dishi Lai

Jian Wu

Qian Cheng

Chi-Chun Lai

Pavan Kumar Reddy Bedadala

Engling Yeo

Rajesh Polimera

Ke Wei

Jing Gao

Priya Sundaresan

Vinay K Pamarthi

Prasanna Kumar Thoppe Ravindran

Zhengtian Feng

Supreeth Sanur

Haoting Luo

Shilpa Nagendra

Aakash Chakravarthy Vijayakumar

Neha Mathur

Surya Prakash Ramachandran

Hari Prasad Ravula

Ganesh Kumar Subramanian

Jugpreet Singh Talwar

Chiahung Chien

Systems and methods are provided for reading data from non-volatile storage devices and decoding the read data. A method may include obtaining a unique identifier for a storage location to be read, retrieving from a memory an adjustment to read reference voltage (Vref) associated with the unique identifier, performing a read operation on the storage location using a read reference voltage adjusted by the adjustment to Vref, decoding data read from the storage location in a decoding process and updating the adjustment to Vin the memory with decoding information generated during the decoding process.

Selecting read reference voltage using historical decoding information

Systems and methods are provided for data retrieval in garbage collection (GC) processes. A method may include obtaining column addresses based on bitmaps indicating positions of valid data units in respective pages within a plurality of blocks of a non-volatile storage device and issuing data transfer commands to the non-volatile storage device, the data transfer commands including the column addresses to identify valid data units of a page of data read into cache registers from the non-volatile storage device.

Valid data retrieval for garbage collection

A method including determining that a memory unit is available for a channel for communication between a storage controller and a non-volatile storage device, the memory unit being for temporary storage for encoded data for transmission through the channel; allocating the memory unit to that channel; and updating a memory mapping entry corresponding to the memory unit. The memory mapping entry is stored in the storage controller. Updating a memory mapping entry may be based on reading/write tasks. The memory mapping entry may indicate a cross channel status, an operation mode and an identifier of the channel. The method may include determining the channel being stuck due to memory shortage and mapping more memory units to the channel.

Systems and methods for an ECC architecture with memory mapping

Systems, apparatus and methods are provided for using a partial logical-to-physical (L2P) address translation table for multiple namespaces to perform address translation. An exemplary embodiment may provide a method comprising: receiving a request for a first logical data address (LDA) that belongs to a first namespace (NS); searching the first NS in an entry location table (ELT) for all namespaces whose L2P entries always reside in memory; determining that the first NS is not in the ELT; searching a cache of lookup directory entries of recently accessed translation data units (TDUs) for a first TDU containing a L2P entry for the first LDA; determining that there is a cache miss; retrieving the lookup directory entry for the first TDU from an in-memory lookup directory and determining that it is not valid; reserving a TDU space for the first TDU; and generating a load request for the first TDU.

Partial logical-to-physical (L2P) address translation table for multiple namespaces

Systems, apparatus and methods are provided for providing an error correction code (ECC) architecture with flexible memory mapping. An apparatus may include an error correction code (ECC) engine, a multi-channel interface for one or more non-volatile storage devices, a memory including a plurality of memory units, a storage containing a plurality of mapping entries to indicate allocation status of the plurality of memory units and a memory mapping manager. The plurality of memory units may be coupled to the ECC engine and the multi-channel interface. The memory mapping manager may be configured to control allocation of the plurality of memory units and set allocation status in the plurality of mapping entries.

Systems and methods are provided for performing error recovery using LLRs generated from multi-read operations. A method may comprise selecting a set of decoding factors for a multi-read operation to read a non-volatile storage device multiple times. The set of decoding factors may include an aggregation mode for aggregating read results of multiple reads. The method may further comprise issuing a command to the non-volatile storage device to read user data according to the set of decoding factors, generating a plurality of Log-Likelihood Ratio (LLR) values using a mapping engine from a pre-selected set of LLR value magnitudes based on the set of decoding factors, obtaining an aggregated read result in accordance with the aggregation mode and obtaining an LLR value from the plurality of LLR values using the aggregated read result as an index.

Error recovery using adaptive LLR lookup table

Systems and methods are provided for data retrieval in garbage collection (GC) processes. A method may include sending a command with bitmaps from a processor to a non-volatile storage device interface controller to perform a read operation on multiple blocks across multiple planes. The bitmaps may indicate positions of valid data units in respective pages within the blocks. The method may further include issuing an initial batch of multi-plane read commands to read a page of data from each of the plurality of planes into cache registers, obtaining specified column addresses to selectively identify valid data units for transferring based on the bitmaps and a data unit size, issuing subsequent batches of multi-plane cache read commands followed by data transfer commands, and issuing a cache read end command followed by a last set of data transfer commands. The data transfer commands may include the specified column addresses.

Systems and methods are provided for concatenated error-correcting coding. An apparatus may include a Low-Density Parity-Check (LDPC) decoder configured to perform an iterative LDPC decoding process on bits of an LDPC codeword, a Bose-Chaudhuri-Hocquenghem (BCH) decoder coupled to the LDPC decoder and a BCH scheduler coupled to the LDPC decoder and the BCH decoder. The LDPC codeword may be generated by LDPC encoding a Bose-Chaudhuri-Hocquenghem (BCH) codeword and the BCH codeword may be generated by BCH encoding a data unit. The BCH scheduler may be configured to determine whether a triggering condition for the BCH decoder is met after each iteration of the iterative LDPC decoding process and activate the BCH decoder to operate on an intermediate decoding result of the LDPC decoder if the triggering condition for the BCH decoder is met.

Concatenated error correcting codes

Systems, apparatus and methods are provided for performing cache program operations in a non-volatile storage system. A method may comprise issuing a first cache program operation from a storage controller to a non-volatile storage device to write data to a first regular block, writing the data to the first regular block and a copy of the data to a backup block, determining that a program error has occurred while writing the data to the first regular block, asserting the program error to the storage controller, retrieving a mapping between the first regular block and the backup block, issuing a read operation to read the copy of the data from the backup block, reading the copy of the data from the backup block and issuing a second cache program operation to write the data to a second regular block and marking the first regular block as defective.

Cache program with backup blocks

Systems and methods are provided for decoding data read from non-volatile storage devices. A method that may include decoding a first codeword read from a storage location of a non-volatile storage device using a first decoder without soft information, determining that the first decoder has failed to decode the first codeword, decoding the first codeword using a second decoder without soft information, determining that the second decoder has succeeded in decoding the first codeword, generating soft information associated with the storage location using decoding information generated by the second decoder and decoding a subsequent codeword from the storage location using the soft information associated with the storage location. The second decoder may be more powerful than the first decoder.

Systems and methods for decoding codewords in a same page with historical decoding information

Systems and methods are provided for tracking read reference voltages used for reading data in a non-volatile storage device. A method may comprise collecting pre-decoding state information for a read reference voltage by reading data stored in a non-volatile storage device using the read reference voltage, collecting post-decoding state information for the read reference voltage after decoding the data, generating a comparison of probability of state errors for the read reference voltage based on the pre-decoding state information and post-decoding state information, obtaining an adjustment amount to the read reference voltage based on the comparison of probability of state errors; and adjusting the read reference voltage by applying the adjustment amount to the read reference voltage to obtain an adjusted read reference voltage.

Reference voltage adjustment based on post-decoding and pre-decoding state information

Systems, apparatus and methods are provided for temperature assisted non-volatile storage device management in a non-volatile storage system. In one embodiment, a non-volatile storage system may comprise a temperature sensor, a non-volatile storage device and a processor. The processor may be configured to obtain a read-out from the temperature sensor, generate a predicted real-time on-die temperature for the non-volatile storage device based on the read-out, generate an estimated threshold voltage for reading data stored in the non-volatile storage device based on the predicted real-time on-die temperature and conduct a local sweep of a reference voltage using the estimated threshold voltage as a starting point to obtain a final read reference voltage with a minimum read bit error rate.

Temperature assisted NAND flash management

Systems, apparatus and methods are provided for logical-to-physical (L2P) address translation. A method may comprise receiving a request for a first logical data address (LDA), and calculating a first translation data unit (TDU) index for a first TDU. The first TDU may contain a L2P entry for the first LDA. The method may further comprise searching a cache of lookup directory entries of recently accessed TDUs using the first TDU index, determining that there is a cache miss, generating and storing an outstanding request for the lookup directory entry for the first TDU in a miss buffer, retrieving the lookup directory entry for the first TDU from an in-memory lookup directory, determining that the lookup directory entry for the first TDU is not valid, reserve a TDU space for the first TDU in a memory and generating a load request for the first TDU.

Non-volatile storage controller with partial logical-to-physical (L2P) address translation table

Systems, apparatus and methods are provided for performing program operations in a non-volatile storage system. In one embodiment, there is provided a method that may comprise categorizing active storage blocks of a non-volatile storage device into a robust group and a less-robust group based on a number of factors including page error count, program time and number of Program/Erase (P/E) cycles; determining that a cache program operation needs to be performed; selecting a first storage block from the robust group to perform the cache program operation; determining that a regular program operation needs to be performed; and selecting a second storage block from the less-robust group to perform the regular program operation.

Robustness-aware NAND flash management

Systems and methods are provided for reading data from non-volatile storage devices and decoding the read data. A method may include obtaining a unique identifier for a storage location to be read, retrieving from a memory an adjustment to read reference voltage (Vref) associated with the unique identifier, performing a read operation on the storage location using a read reference voltage adjusted by the adjustment to Vref, decoding data read from the storage location in a decoding process and updating the adjustment to Vwith decoding information generated during the decoding process.

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Milpitas, CA, United States of America

Jie Chen