Semiconductor Components Industries, LLC

Jie Chang

Keunhyuk Lee

HuiBin Chen

Tiburcio Maldo

Yong Liu

Sixin Ji

Leo Gu

Jerome Teysseyre

Huibin Chen

Jerome Tysseyre

In one general aspect, a method can include forming a recess and a mesa in a metal layer associated with a substrate, and disposing a first portion of a conductive-bonding component on the mesa and a second portion of the conductive-bonding component in the recess. The method can include disposing a semiconductor component on the conductive-bonding component such that the second portion of the conductive-bonding component is disposed between an edge of the semiconductor component and a bottom surface of the recess.

Module with substrate recess for conductive-bonding component

Implementations of semiconductor packages may include: one or more die electrically coupled to a lead frame. The lead frame may be included within a housing. The semiconductor package may also include a set of signal leads extending from the housing, a set of power leads extending from the housing, and a plurality of press fit pins each fixedly coupled to the set of signal leads and the set of power leads. The set of signal leads and the set of power leads may be configured to couple with a substrate.

Press-fit power module and related methods

In one general aspect, an apparatus can include a semiconductor component, a substrate including a recess, and a conductive-bonding component. The conductive-bonding component is disposed between the semiconductor component and the substrate. The conductive-bonding component has a first thickness between a bottom of the recess and a bottom surface of the semiconductor component greater than a second thickness between the top of the substrate and the bottom surface of the semiconductor component.

In one general aspect, a package can include a first submodule including a first semiconductor die coupled to a first substrate and a first spacer, and disposed between the first spacer and the first substrate. The first submodule includes a second spacer disposed lateral to the first semiconductor die. The package includes a second submodule including a second semiconductor die coupled to a second substrate and a third spacer, and disposed between the third spacer and the second substrate. The second submodule includes a fourth spacer disposed lateral to the second semiconductor die. The package includes an inter-module layer disposed between the first submodule and the second submodule. The first spacer of the first submodule is electrically coupled to the fourth spacer of the second-submodule via the inter-module layer. The second spacer of the first submodule is electrically coupled to the third spacer of the second-submodule via the inter-module layer.

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Suzhou, China

Jie Chang