Beijing Boe Optoelectronics Technology Co., Ltd.

Boe Technology Group Co., Ltd.

Jidong Zhang

Hailin Xue

Cheng Li

Yubo Xu

Hongming Zhan

A thin film transistor (TFT) array substrate is disclosed and having a pixel region and a peripheral region surrounding the pixel region, and the pixel region comprises horizontal gate lines, longitudinal data lines defining pixel units with the horizontal gate lines, and storage capacitor electrode (Vcom) lines. The peripheral region comprises at least one peripheral common electrode line which is electrically connected with an integrated-circuit (IC) element. The Vcom lines are connected with the peripheral common electrode line through one or more Vcom line IC terminals.

TFT array substrate and manufacturing method thereof

A common electrode driving method, comprises: generating a first common electrode signal to be applied to a storage electrode line of each row of pixels on an array substrate, and a second common electrode signal to be applied to a common electrode forming a liquid crystal capacitance with pixel electrodes of each row of pixels on the array substrate, the first common electrode signal being opposite to a gate signal for gate electrodes applied to the corresponding row of pixels in terms of transition timing; and inputting the first common electrode signal to each row of pixels, and inputting the second common electrode signal to the common electrode.

Growing community of inventors

Beijing, China

Jidong Zhang