The 13Th Research Institute of China Electronics

Jiayun Yin

Zhihong Feng

Jia Li

Yulong Fang

Bo Wang

Weili Lu

Yanmin Guo

Zhirong Zhang

The disclosure provides a method for passivating a silicon carbide epitaxial layer, relating to the technical field of semiconductors. The method includes the following steps: introducing a carbon source and a silicon source into a reaction chamber, and growing a silicon carbide epitaxial layer on a substrate; and turning off the carbon source, introducing a nitrogen source and a silicon source into the reaction chamber, and growing a silicon nitride thin film on an upper surface of the silicon carbide epitaxial layer. The silicon nitride thin film grown by the method has few defects and high quality, and may be used as a lower dielectric layer of a gate electrode in a field effect transistor. It does not additionally need an oxidation process to form a SiOdielectric layer, thereby reducing device fabrication procedures.

Method for passivating silicon carbide epitaxial layer

Growing community of inventors

Shijiazhuang, China

Jiayun Yin