Solopower, Inc.

Other

Jiaxiong Wang

Serdar Aksu

Bulent Mehmet Basol

Mustafa Pinarbasi

A flexible solid-state multiple-stacked planar lithium-ion battery module is provided. It comprises a number of lithium-ion battery groups that consist of back-to-back multiple-stacked electrochemical cells interconnected in parallel. Solid electrolytes are used in all of electrochemical cells. The battery groups are packed and sealed with flexible polymeric materials. The battery groups are combined into some battery sections. The positive and negative terminals of every battery group are connected to corresponding side terminals which are controlled with side switches. The positive terminals of the first battery groups in every battery section and the negative terminals of the last battery groups in every battery section are further connected to a positive rotary switch and a negative rotary switch, respectively. With these different switches and circuit control boxes, input and output voltages and currents of the battery module can be freely adjusted and controlled.

Flexible solid-state multiple-stacked planar lithium-ion battery module

A roll-to-roll reactor, which is assembled with an RTP (Rapid Thermal Process) compartment, a cooling compartment, and a series of modular heating sections, is provided. Its length is adjustable by adding or reducing numbers of the modular heating sections according to required reaction time and delivery speed of a continuous flexible workpiece. The reactor contains a reaction oven, assembled with a series of modular thermal control components, included inside a vacuum-tight reaction chamber. The oven temperature can be precisely controlled through combinations of heating elements, thermocouples and cooling tubing. The present reactor can be used for annealing and reaction of various precursor films on flexible substrates under vacuum and in inert or reactive gas ambient at temperatures ranging from room temperature to a thousand of Celsius degrees through a continuous roll-to-roll process.

Assembled reactor for fabrications of thin film solar cell absorbers through roll-to-roll processes

A chemical bath deposition method based on a new CBD reactor is presented to prepare different thin films on continuous flexible substrates in roll-to-roll processes. In particular, they are useful to deposit CdS or ZnS buffer layers in manufacture of thin film solar cells. This method deposits thin films onto vertically travelling continuous flexible workpieces delivered by a roll-to-roll system. The thin films are deposited with continuously spraying the reaction solutions from their freshly mixed styles to gradually aged forms until the designed thickness is obtained. The substrates and the solutions are heated to a reaction temperature. During the deposition processes, the front surfaces of the flexible substrates are totally covered with the sprayed solutions but the substrate backsides are remained dry. The reaction ambience inside the reactor can be isolated from the outside atmosphere. The apparatus is designed to generate a minimum amount of waste solutions for chemical treatments.

Chemical bath deposition method for fabrication of semiconductor films through roll-to-roll processes

A chemical bath deposition apparatus is presented to prepare different thin films on plane substrates. In particular, it is useful to deposit CdS or ZnS buffer layers in manufacture of thin film solar cells. This deposition apparatus deposits thin films onto vertically travelling plane workpieces delivered by a conveyor belt. The thin films are deposited with continuously spraying the reaction solutions from their freshly mixed styles to gradually aged forms until the designed thickness is obtained. The substrates and the solutions are heated to a reaction temperature. During the deposition processes, the front surfaces of the substrates are totally covered with the sprayed solutions but the substrate backsides are remained dry. The reaction ambience inside the reactor can be isolated from the outside atmosphere. The apparatus is designed to generate a minimum amount of waste solutions for chemical treatments.

Chemical bath deposition apparatus for fabrication of semiconductor films

A chemical bath deposition apparatus is presented to prepare different thin films on continuous flexible substrates in roll-to-roll processes. In particular, they are useful to deposit CdS or ZnS buffer layers in manufacture of thin film solar cells. This apparatus deposits thin films onto vertically travelling continuous flexible workpieces delivered by a roll-to-roll system. The thin films are deposited with continuously spraying the reaction solutions from their freshly mixed styles to gradually aged forms until the designed thickness is obtained. The substrates and the solutions are heated to a reaction temperature. During the deposition processes, the front surfaces of the flexible substrates are totally covered with the sprayed solutions but the substrate backsides are remained dry. The reaction ambience inside the reactor can be isolated from the outside atmosphere. The apparatus is designed to generate a minimum amount of waste solutions for chemical treatments.

Chemical bath deposition apparatus for fabrication of semiconductor films through roll-to-roll processes

A chemical bath deposition method is presented to prepare different thin films on plane substrates. In particular, they are useful to deposit CdS or ZnS buffer layers in manufacture of thin film solar cells. This method and the deposition apparatus deposit thin films onto vertically travelling plane workpieces delivered by a conveyor belt. The thin films are deposited by continuously spraying the reaction solutions from their freshly mixed styles to gradually aged forms until the designed thickness is obtained. The substrates and the solutions are heated to a reaction temperature. During the deposition processes, the front surfaces of the substrates are totally covered with the sprayed solutions but the substrate backsides are remained dry. The reaction ambience inside the reactor can be isolated from the outside atmosphere. The method is designed to generate a minimum amount of waste solutions for chemical treatments.

Chemical bath deposition method for fabrication of semiconductor films

An electrochemical co-deposition method and solution to plate uniform, defect free and smooth (In,Ga)&#x2014;Se films with repeatability and controllable molar ratios of (In,Ga) to Se are provided. Such layers are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the present invention provides an alkaline electrodeposition solution that includes an In salt, a Se acid or oxide, a tartrate salt as complexing agent for the In species, and a solvent to electrodeposit an In&#x2014;Se film possessing sub-micron thickness on a conductive surface.

Electroplating methods and chemistries for deposition of group IIIA-group via thin films

The present invention provides a method and precursor structure to form a Group IBIIIAIVA solar cell absorber layer. The method includes forming a Group IBIIIAVIA compound layer on a base by forming a precursor layer on the base through electrodepositing three different films, and then reacting the precursor layer with selenium to form the Group IBIIIAVIA compound layer on the base. The three films, described by the precursor layer, include in one embodiment a first alloy film comprising copper, indium and gallium, a second alloy film comprising copper and selenium formed on the first alloy film; and a selenium film formed on the second alloy film.

Enhanced plating chemistries and methods for preparation of group IBIIIAVIA thin film solar cell absorbers

An electrochemical deposition method to form uniform and continuous Group IIIA material rich thin films with repeatability is provided. Such thin films are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the Group IIIA material rich thin film is deposited on an interlayer that includes 20-90 molar percent of at least one of In and Ga and at least 10 molar percent of an additive material including one of Cu, Se, Te, Ag and S. The thickness of the interlayer is adapted to be less than or equal to about 20% of the thickness of the Group IIIA material rich thin film.

Electroplating method for depositing continuous thin layers of indium or gallium rich materials

An electrochemical deposition method and electrolyte to plate uniform, defect free and smooth gallium films are provided. In a preferred embodiment, the electrolyte may include a solvent that comprises water and at least one monohydroxyl alcohol, a gallium salt, and an acid to control the solution pH and conductivity. The method electrodeposits a gallium film possessing sub-micron thickness on a conductive surface. Such gallium layers are used in fabrication of semiconductor and electronic devices such as thin film solar cells.

Gallium electroplating methods and electrolytes employing mixed solvents

Described is an electrodeposition solution for deposition of a Group IB-IIIA thin film on a conductive surface. In a preferred embodiment, the electrodeposition solution comprises a solvent; a Group IB material source that dissolves in the solvent and provides a Group IB material; a Group IIIA material source that dissolves in the solvent and provides a Group IIIA material; and a blend of at least two complexing agents, one of the at least two complexing agent forming a complex with the Group IB material and the other one of the at least two complexing agent forming a complex with the Group IIIA material; wherein the pH of the solution is at least 7.

Electroplating methods and chemistries for deposition of copper-indium-gallium containing thin films

The present invention relates to gallium (Ga) electroplating methods and chemistries to deposit uniform, defect free and smooth Ga films with high plating efficiency and repeatability. Such layers may be used in fabrication of electronic devices such as thin film solar cells. In one embodiment, the present invention provides a solution for application on a conductor that includes a Ga salt, a complexing agent, a solvent, and a Ga-film having submicron thickness is facilitated upon electrodeposition of the solution on the conductor. The solution may further include one or both of a Cu salt and an In salt.

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Castro Valley, CA, United States of America

Jiaxiong Wang