China Petroleum & Chemical Corporation

Peking University

Research Institute of Petroleum Processing, Sinopec

Beijing Zitiao Network Technology Co., Ltd.

Jiaxin Wang

Tao Wang

Ru Huang

Yangyuan Wang

Qianqian Huang

Daqing Zhang

Yuhong Zhang

Chunlei Wu

Gaoshan Zang

Chao Wang

Yijing Lin

A video editing method is provided. A clip identifier in one-to-one correspondence with a video clip indicated by a video editing template is displayed based on the video editing template, to prompt a user to import a video material for a specified video clip corresponding to the clip identifier; in response to a trigger operation of presenting an editing result, the editing result, which is obtained by applying, on a target video material, a specified editing operation indicated by the video editing template, is presented, wherein the target video material corresponds to the specified video clip; the target video material is used to be imported into the corresponding specified video clip to form the editing result; and if the specified video clip includes a first video clip into which the user does not import a video material, a preset video material is added into the first video clip.

Video editing method and apparatus

This disclosure describes a method for regenerating a semi-regenerated reforming catalyst. The method comprises adjusting the reaction temperature to 250-480&#xb0; C., introducing a sulfur-containing naphtha into the reforming reactor, or stopping introducing a feedstock into the reforming reactor, and introducing a sulfur-containing hydrogen into a recycle gas, until the sulfur content in the catalyst is 0.32-0.8 mass %, then the catalyst is subject to coke-burning, oxychlorination and reduction. Alternatively, the method first subjects the spent catalyst to coke-burning followed by introducing sulfate ions thereinto; and then performing oxychlorination and reduction. Disclosed is still another method for regenerating a platinum-rhenium reforming catalyst, which comprises coke-burning the spent catalyst; introducing sulfur and chlorine in the catalyst by impregnation; and then drying, calcinating and reducing.

Method for regenerating semi-regenerated reforming catalyst

A naphtha reforming catalyst, comprising an alumina support and following components with the content calculated on the basis of the support: VIII group metal 0.1-2.0% by weight, VIIB group metal 0.1-3.0% by weight, sulfate ion 0.45-3.0% by weight, and halogen 0.5-3.0% by weight. The catalyst is used in a naphtha reforming reaction without presulfurization and has a high aromatization activity and a selectivity.

Naphtha reforming catalyst and preparation method thereof

The present invention discloses a short-gate tunneling field effect transistor having a non-uniformly doped vertical channel and a fabrication method thereof. The short-gate tunneling field effect transistor has a vertical channel and the channel region is doped in such a slowly-varied and non-uniform manner that a doping concentration in the channel region appears as a Gaussian distribution along a vertical direction and the doping concentration in the channel near the drain region is higher while the doping concentration in the channel near the source region is lower; and double control gates are formed at both sides of the vertical channel and the control gates form an L-shaped short-gate structure, so that a gate underlapped region is formed in the channel near the drain region, and a gate overlapped region is formed at the source region.

Short-gate tunneling field effect transistor having non-uniformly doped vertical channel and fabrication method thereof

The present invention discloses a tunneling field effect transistor having a three-side source and a fabrication method thereof, referring to field effect transistor logic devices and circuits in CMOS ultra large scale integrated circuits (ULSI). By means of the strong depletion effect of the three-side source, the transistor can equivalently achieve a steep doping concentration gradient for the source junction, significantly optimizing the sub-threshold slope of the TFET. Meanwhile, the turn-on current of the transistor is boosted. Furthermore, due to a region uncovered by the gate between the gate and the drain, the bipolar conduction effect of the transistor is effectively inhibited, and on the other hand, in the small-size transistor a parasitic tunneling current at the corner of the source junction is inhibited. The fabrication method is simple and can be accurately controlled. By forming the channel region using an epitaxy method subsequent to etching, it facilitates to form a steeper doping concentration gradient for the source region or form a hetero-junction. Moreover, the fabrication flow of the post-gate process facilitates to integrate a high-k gate dielectric/a metal gate having good quality, further improving the performance of the transistor.

Tunneling field effect transistor having a three-side source and fabrication method thereof

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Beijing, China

Jiaxin Wang