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University of Houston System

Jiarui Liu

Wei-Kan Chu

Lin Shao

Xuemei Wang

Xinming Lu

Vacancies and dopant ions are introduced near the surface of a semiconductor wafer. The dopant ions which diffuse by an interstitialcy mechanism have diffusivity greatly reduced, which leads to a very low resistivity doped region and a very shallow junction.

Method for shallow dopant distribution

A method of forming a stable junction on a microelectronic structure on a semiconductor wafer having a silicon surface layer on a substrate includes the following steps: implanting dopant ions into the surface layer; cleaning and oxidizing the surface layer, and twice annealing the wafer to recover a damaged silicon crystal structure of the surface layer resulting from the low energy ion implantation. The first annealing process uses a temperature range of 800&deg; C. to 1200&deg; C. for a duration from about a fraction of a second to less than about 1000 seconds, with a ramp-up rate of about 50&deg; C./second to about 1000&deg; C./second. The second annealing process uses a temperature range of 400&deg; C. to 650&deg; C. for a time period of from about 1 second to about 10 hours, and more preferably, from about 60 seconds to about 1 hour. Both annealing processes include cooling processes.

Method to overcome instability of ultra-shallow semiconductor junctions

Semiconductor wafer with ultra thin doping level formed by defect engineering

Thermal neutron irradiation of superconducting body compositions into which Li or B has been incorporated as a unit cell external or internal dopant introduces by the nuclear reaction of the dopant pinning centers which substantially improve the critical current density of the body.

Growing community of inventors

Pearland, TX, United States of America

Jiarui Liu