Texas Instruments Corporation

Jianxin Liu

Hong Yang

Yunlong Liu

Yufei Xiong

Qi Yang

Lin Lin

Qiuling Jia

Jing Wang

An integrated circuit including a trench in the substrate with a high quality trench oxide grown on the sidewalls and the bottom of the trench where the ratio of the thickness of the high quality trench oxide formed on the sidewalls to the thickness formed on the bottom is less than 1.2. An integrated circuit including a trench with high quality oxide is formed by first growing a sacrificial oxide in dilute oxygen at a temperature in the range of 1050&#xb0; C. to 1250&#xb0; C., stripping the sacrificial oxide, growing high quality oxide in dilute oxygen plus trans 1,2 dichloroethylene at a temperature in the range of 1050&#xb0; C. to 1250&#xb0; C., and annealing the high quality oxide in an inert ambient at a temperature in the range of 1050&#xb0; C. to 1250&#xb0; C.

High quality deep trench oxide

A method for forming bond pads on a semiconductor die includes forming a dielectric stack including a bottom and top dielectric layer having a contact hole therethrough over a bond pad. An outer edge of the bottom dielectric layer within the contact hole extends beyond an outer edge of the top dielectric layer to define a bond pad edge. A second metal layer on a first metal layer is deposited. A first photoresist layer is formed exclusively within the contact hole. The second metal layer is wet etched to recess the second metal layer from sidewalls of the bottom dielectric layer in the contact hole. A second photoresist layer is formed exclusively within the contact hole. The first metal layer is wet etched to recess the first metal layer from the top dielectric layer. The first metal layer extends over the bond pad edge onto the bottom dielectric layer.

Bond pad stack for transistors

Method for forming bond pad stack for transistors

Growing community of inventors

Chengdu, China

Jianxin Liu