Delta Electronics, Inc.

Chinese Academy of Sciences

Shanghai Jiao Tong University

Jianxin Chen

Kun Jiang

Yi Zhou

Guoqiang Xie

Quansong Luo

Zhipeng Qin

Xi Liu

Geguo Men

A mid-infrared semiconductor saturable absorber mirror based on InAs/GaSb superlattice comprises a GaSb substrate with an anti-reflection film coated on the lower surface of the GaSb substrate; InAs/GaSb superlattice which has a specific structure and thickness and is arranged on the GaSb substrate; and Bragg reflection film which is arranged on the InAs/GaSb superlattice, wherein Bragg reflection film is composed of multiple pairs of ZnS and YbFfilm layers with a thickness of ¼ wavelength, and the YbFfilm layer is connected with the InAs/GaSb superlattice. The device not only has a mid-infrared working range with a broadband operation bandwidth, but also has the advantages of designable parameters, outstanding robustness, high damage threshold and the like, and sets a foundation for the development of mid-infrared ultrafast mode-locked lasers.

Mid-infrared semiconductor saturable absorber mirror based on INAS/GASB superlattice and preparation method thereof

A power module and a manufacturing method are provided. The power module includes a first electronic assembly and a second electronic assembly. The first electronic assembly includes at least one pin. The second electronic assembly includes a first surface and a second surface opposite to each other. The first surface is more adjacent to the first electronic assembly than the second surface. A direction from the first surface toward the second surface is defined as a reference direction. The second electronic assembly includes a first region and a second region. The first region has a first thickness in the reference direction. The second region has a second thickness in the reference direction. The second thickness is less than the first thickness. The second region includes at least one through hole. The pin is penetrated through the at least one through hole and fixed on the second electronic assembly.

Power module and manufacturing method thereof

The present disclosure is related to an electronic module assembly structure including a system board, an electronic module and an adhesive material. The system board includes a first upper surface and a first lower surface opposite to each other. The electronic module spatially corresponds to the first upper surface and includes plurality leading pins and a carrier. Each leading pin has a soldering surface and is connected to the first upper surface through a first reflow soldering process. When the plurality leading pins are connected to the first upper surface, a height difference is formed between the carrying surface of the carrier and the soldering surfaces. The adhesive material is disposed on the carrying surface or the first upper surface. The carrier is connected with the first upper surface through the adhesive material, so that the electronic module is fixed to the first upper surface through the adhesive material.

Electronic module assembly structure

Growing community of inventors

Shanghai, China

Jianxin Chen