Yangtze Memory Technologies Co., Ltd.

Jianwei Lu

Lei Jin

Qiguang Wang

An Zhang

A three-dimensional (3D) memory device includes a substrate, an alternating conductive/dielectric stack disposed on the substrate, an epitaxial layer disposed on the substrate, a blocking layer disposed on the epitaxial layer and surrounded by the alternating conductive/dielectric stack, a trapping layer disposed on and surrounded by the blocking layer, a tunneling layer disposed on and surrounded by the trapping layer, and a semiconductor layer disposed on and in contact with the epitaxial layer and partially disposed on and surrounded by the tunneling layer.

Three-dimensional memory device and manufacturing method thereof

A three-dimensional (3D) memory device and a manufacturing method thereof are provided. The method includes the following steps. An alternating dielectric stack is formed on a substrate. An opening is formed penetrating the alternating dielectric stack in a thickness direction of the substrate. A blocking layer is formed on a sidewall of the opening. A trapping layer is formed in the opening, and the trapping layer is formed on the blocking layer. The trapping layer includes a lower portion and an upper portion disposed above the lower portion. A thickness of the upper portion in a horizontal direction is greater than a thickness of the lower portion in the horizontal direction. The thickness distribution of the trapping layer is modified for improving the electrical performance of the 3D memory device.

Growing community of inventors

Wuhan, China

Jianwei Lu