Seagate Technology Incorporated

Bfly Operations, Inc.

Butterfly Network, Inc.

Qualcomm Incorporated

Jianwei Liu

Michael Joseph Stirniman

Keith Glen Fife

Lingyun Miao

Jing Gui

Jonathan Marc Rothberg

Li-Ping Wang

Joseph Lutsky

Sarp Satir

Huan H Tang

Jungwook Yang

Andrew Betts

Victor L Pushparaj

Tyler S Ralston

Kostadin Dimitrov Djordjev

David William Burns

David Shiao-Min Kuo

Nikhil Apte

Joseph Leigh

Wen Hong Liu

Sherman Sebastian Antao

Jonathan M Rothberg

Micah Timothy Lawrence

Kueir Weei Chour

John Stanislaus Bujak

Norman Satoru Himaka

Li-Peng Wang

Dan Castro

An ultrasound transducer device includes an electrode, a membrane separated from the electrode by a cavity between the membrane and the electrode, a patterned membrane support layer that defines a size and shape of the cavity and that is disposed between the electrode and the membrane, and vias that electrically connect the electrode to a substrate. The vias are disposed in the ultrasound transducer device such that less than 50% of the vias overlap with a support surface of the patterned membrane support layer, in a plan view.

Bottom electrode via structures for micromachined ultrasonic transducer devices

An ultrasound transducer device made by a process that includes the steps of forming depositing a first layer on a substrate, depositing a second layer on the first layer, patterning the second layer at a region corresponding to a location of a transducer cavity, depositing a third layer that refills regions created by patterning the second layer, planarizing the third layer to a top surface of the second layer, removing the second layer, conformally depositing a fourth layer over the first layer and the third layer, defining the transducer cavity in a support layer formed over the fourth layer; and bonding a membrane to the support layer.

Anti-stiction bottom cavity surface for micromachined ultrasonic transducer devices

Aspects of the disclosure described herein related to packaging an ultrasound-on-a-chip. In some embodiments, an apparatus includes an ultrasound-on-a-chip that has through-silicon vias (TSVs) and an interposer coupled to the ultrasound-on-a-chip and including vias, where the ultrasound-on-a-chip is coupled to the interposer such that the TSVs in the ultrasound-on-a-chip are electrically connected to the vias in the interposer. In some embodiments, an apparatus includes an ultrasound-on-a-chip having bond pads, an interposer that has bond pads and that is coupled to the ultrasound-on-a-chip, and wirebonds extending from the bond pads on the ultrasound-on-a-chip to the bond pads on the interposer.

Methods and apparatuses for packaging an ultrasound-on-a-chip

An ultrasonic transducer is described. The ultrasonic transducer comprises a membrane and a substrate disposed opposite the membrane such that a cavity is formed therebetween. The substrate comprises an electrode region and pedestals protruding from a surface of the substrate and having a height greater than a height of the electrode region, the pedestals being electrically isolated from the electrode region.

Micromachined ultrasound transducer with pedestal

An ultrasonic transducer device includes a patterned film stack disposed on first regions of a substrate, the patterned film stack including a metal electrode layer and a bottom cavity layer formed on the metal electrode layer. The ultrasonic transducer device further includes a planarized insulation layer disposed on second regions of the substrate layer, a cavity formed in a membrane support layer and a CMP stop layer, the CMP stop layer including a top layer of the patterned film stack and the membrane support layer formed over the patterned film stack and the planarized insulation layer. The ultrasonic transducer device also includes a membrane bonded to the membrane support layer. The CMP stop layer underlies portions of the membrane support layer but not the cavity.

Adaptive cavity thickness control for micromachined ultrasonic transducer devices

Micromachined ultrasonic transducers having pressure ports are described. The micromachined ultrasonic transducers may comprise flexible membranes configured to vibrate over a cavity. The cavity may be sealed, in some instances by the membrane itself. A pressure port may provide access to the cavity, and thus control of the cavity pressure. In some embodiments, an ultrasound device including an array of micromachined ultrasonic transducers is provided, with pressure ports for at least some of the ultrasonic transducers. The pressure ports may be used to control pressure across the array.

Pressure port for ultrasonic transducer on CMOS sensor

An ultrasonic transducer device includes a bottom electrode layer of a transducer cavity disposed over a substrate. The bottom electrode layer includes a bottom layer of a first type metal; a top layer of the first type metal; a second type metal disposed between the bottom layer and the top layer; and at least one intermediate layer of the first type metal disposed between the bottom layer and the top layer, the at least one intermediate layer configured so as to define at least two discrete layers of the second type metal.

Bottom electrode material stack for micromachined ultrasonic transducer devices

An ultrasound device is described. The ultrasound device may include a cavity, a membrane, and a sensing electrode. When an electrical signal is applied to the sensing electrode and a static bias is applied to the membrane, the membrane vibrates within the cavity and produces ultrasonic signals. The cavity, the membrane, and the sensing electrode may be considered a capacitive micromachined ultrasonic transducer (CMUT). The sensing electrode may be shaped as a ring, whereby the central portion of the sensing electrode is removed. Removal of the central portion of the sensing electrode may reduce the parasitic capacitance without substantially affecting the production of ultrasonic signals by the CMUT. This, in turn, can result in an increase in the signal-to-noise ratio (SNR) of the ultrasonic signals. The ultrasound device may further include a bond pad configured for wire bonding, and a trench electrically isolating the bond pad from the membrane.

Ultrasound devices

A method of forming an ultrasonic transducer device involves depositing a first layer on a substrate, depositing a second layer on the first layer, patterning the second layer at a region corresponding to a location of a transducer cavity, depositing a third layer that refills regions created by patterning the second layer, planarizing the third layer to a top surface of the second layer, removing the second layer, conformally depositing a fourth layer over the first layer and the third layer, defining the transducer cavity in a support layer formed over the fourth layer; and bonding a membrane to the support layer.

An ultrasound transducer device includes an electrode, a membrane, and vias. The membrane is separated from the electrode by a cavity between the membrane and the electrode. The vias electrically connect the electrode to a substrate disposed on an opposite side of the electrode from a side facing the membrane. The vias are disposed in the ultrasound transducer device such that greater than 50% of the vias overlap with the cavity in a plan view.

A method of forming an ultrasonic transducer device includes forming a patterned metal electrode layer over a substrate, the patterned metal electrode layer comprising a lower layer and an upper layer formed on the lower layer; forming an insulation layer over the patterned metal electrode layer; and planarizing the insulation layer to the upper layer of the patterned metal electrode layer, wherein the upper layer comprises a electrically conductive material that serves as a chemical mechanical polishing (CMP) stop layer that has CMP selectivity with respect to the insulation layer and the lower layer, and wherein the upper layer has a CMP removal rate slower than that of the insulation layer.

Bi-layer metal electrode for micromachined ultrasonic transducer devices

An ultrasonic transducer device is provided. In some embodiments, the ultrasonic transducer device includes a substrate having a membrane support layer formed on a bottom cavity layer, and an opening in the membrane support layer so as to form a transducer cavity. In some embodiments, the opening comprises a truncated circle shape.

Micromachined ultrasonic transducer devices having truncated circle shaped cavities

Described herein are methods and apparatuses for packaging an ultrasound-on-a-chip. An ultrasound-on-a-chip may be coupled to a redistribution layer and to an interposer layer. Encapsulation may encapsulate the ultrasound-on-a-chip device and first metal pillars may extend through the encapsulation and electrically couple to the redistribution layer. Second metal pillars may extend through the interposer layer. The interposer layer may include aluminum nitride. The first metal pillars may be electrically coupled to the second metal pillars. A printed circuit board may be coupled to the interposer layer.

A method of forming an ultrasound transducer device includes bonding a membrane to a substrate so as to form a sealed cavity between the membrane and the substrate. An exposed surface located within the sealed cavity includes a getter material that is electrically isolated from a bottom electrode of the cavity.

Fabrication techniques and structures for gettering materials in ultrasonic transducer cavities

A method of forming an ultrasonic transducer device includes bonding a membrane to seal a transducer cavity with at least a portion of a getter material layer being exposed, the getter material layer comprising a portion of a bilayer stack compatible for use in damascene processing.

Growing community of inventors

Fremont, CA, United States of America

Jianwei Liu