Zhuzhou Crrc Times Electric Co., Ltd

Jianwei Huang

Guoyou Liu

Haihui Luo

Xiaoping Dai

Rongzhen Qin

Haibo Xiao

Provided are an insulated gate bipolar transistor and a preparation method therefor. An auxiliary groove gate, namely a structure of an auxiliary groove, an auxiliary gate layer and the corresponding gate oxide layer, is arranged below an emitting metal electrode between a first common groove and a second common groove so as to provide a carrier pathway when the insulated gate bipolar transistor is turned off, so that not only the turn-off speed of the insulated gate bipolar transistor is increased, but also the reverse-biased safety operation area characteristic of the insulated gate bipolar transistor is improved, thus improving the performance of the insulated gate bipolar transistor.

Insulated gate bipolar transistor and preparation method therefor

A reverse conducting IGBT device and a method for manufacturing the reverse conducting IGBT device are provided. The method includes: forming, based on a semiconductor structure including an IGBT cell region and a fast recovery diode cell region which are separated from each other, a copper electrode layer on an upper surface of the IGBT cell region; performing ion implantation on the semiconductor structure by using the copper electrode layer as a barrier layer, for controlling minority carrier lifetime of the fast recovery diode cell region; and forming a metal electrode layer on an upper surface of the fast recovery diode cell region, where the metal electrode layer is electrically connected to the copper electrode layer on the upper surface of the IGBT cell region.

Growing community of inventors

Hunan, China

Jianwei Huang