International Business Machines Corporation

Globalfoundries Inc.

Jiantao Zheng

Kamal Kumar Sikka

Jeffrey Allen Zitz

Steven Paul Ostrander

Virendra R Jadhav

Thomas Weiss

Thomas Edward Lombardi

Edmund D Blackshear

Paul F Bodenweber

Donald Merte

Xiaojin Wei

Gerald Keith Bartley

Govindarajan Natarajan

Hilton T Toy

David L Questad

David L Edwards

Sushumna Iruvanti

Bruce Kenneth Furman

James N Humenik

Peter Jeffrey Brofman

Kenneth Charles Marston

Mark William Kapfhammer

Hsichang Liu

Jamil A Wakil

Gregg B Monjeau

David R Motschman

Richard D Langlois

Martin Beaumier

Mohamed Belazzouz

A method including providing a laminate substrate, characterizing the laminate substrate for warpage characteristics, determining a horizontal plane distortion based on the warpage characteristics, and placing the laminate substrate into a fixture with an adjustment to correct the horizontal plane distortion, the adjustment being located in a center of the laminate substrate, wherein the adjustment contacts the laminate substrate. The method may further include fluxing the laminate substrate, placing a chip onto the laminate substrate, and placing the fixture into a reflow furnace to join the chip and the laminate substrate.

Method for shaping a laminate substrate

An apparatus for determining a magnitude of a compressive load applied to a piston including a compliant film disposed between first and second elements is provided. The apparatus includes a first part movable with the first element in a movement direction along which the magnitude of the compressive load is to be determined, a second part movable with the second element in the movement direction and a sensor to measure a distance between the first and second parts in the movement direction, the measured distance being related to a deformation of the compliant film as the compressive load is applied.

Determining magnitude of compressive loading

A fixture for shaping a laminate substrate includes a trap ring, a base plate and a center button. The base plate includes a recess adapted to receive the laminate substrate. The center button is disposed in an opening in the base plate. The center button may be adjusted to shape the laminate substrate.

Fixture for shaping a laminate substrate

A method including providing a fixture comprising a trap ring, a base plate having a recess adapted to receive a laminate substrate, the base plate including an opening and an adjustable height center button disposed in the opening, the opening being located within the recess and located in a center of the laminate substrate, characterizing the laminate substrate for warpage characteristics by using one of room temperature techniques and elevated temperature techniques, determining a horizontal plane distortion based on the warpage characteristics, and placing the laminate substrate into the fixture with an adjustment to correct the horizontal plane distortion, the adjustment is provided by the adjustable height center button, wherein the adjustable height center button contacts the laminate substrate. The method further includes fluxing the laminate substrate, placing a chip onto the laminate substrate, and placing the fixture into a reflow furnace to join the chip and the laminate substrate.

An apparatus for determining a thickness change of thermal interface material (TIM) disposed between first and second elements is provided. The apparatus includes a first part movable with the first element in a movement direction along which the TIM thickness is to be determined, a second part movable with the second element in the movement direction and a sensor to measure a distance between the first and second parts in the movement direction, the measured distance being related to the TIM thickness change.

Determining thermal interface material (TIM) thickness change

A die stack package is provided and includes a substrate, a stack of computing components, at least one thermal plate, which is thermally communicative with the stack and a lid supported on the substrate to surround the stack and the at least one thermal plate to thereby define a first heat transfer path extending from one of the computing components to the lid via the at least one thermal plate and a fin coupled to a surface of the lid and the at least one thermal plate, and a second heat transfer path extending from the one of the computing components to the lid surface without passing through the at least one thermal plate.

Enhanced thermal management of 3-D stacked die packaging

A frontside of a chip is bonded to a top surface of a chip carrier. Seal material is dispensed at a periphery of the top surface of the chip carrier. A solder TIM having a first side and a second side is provided. The first side of the TIM contacts a backside of the chip. A reflow is performed to melt the TIM. The second side of the TIM is bonded to a lid. The seal material is cured. The lid is attached to the top surface of the chip carrier. Backfill material is injected into a space between the top surface of the chip carrier and the lid. The backfill material abuts sides of the TIM. The backfill material is cured. TIM solder cracking and associated thermal degradation are mitigated.

Reliability enhancement of metal thermal interface

Disclosed is a multilayer thermal interface material which includes a first layer of metallic thermal interface material, a buffer layer and preferably a second layer of thermal interface material which may be metallic or nonmetallic. The multilayer thermal interface material is used in conjunction with a semiconductor device assembly of a chip carrier substrate, a heat spreader for attaching to the substrate, a semiconductor device mounted on the substrate and underneath the heat spreader and the multilayer thermal interface material interposed between the heat spreader and the semiconductor device. The heat spreader has a first coefficient of thermal expansion (CTE), CTE1, the buffer layer has a second CTE, CTE2, and the semiconductor device has a third CTE, CTE3, wherein CTE1&#x3e;CTE2&#x3e;CTE3.

Semiconductor device assembly having a stress-relieving buffer layer

Disclosed herein are embodiments of electronic package incorporating a thermal interface material (e.g., a metal TIM) that is positioned between a lid and a chip on a substrate. The TIM has a predetermined (i.e., repeatable) minimum thickness and is further registered to the top surface of the chip (i.e., the TIM has an essentially symmetric shape and does not extend vertically along the sidewalls of the chip). Also, disclosed herein are embodiments of a method of forming such an electronic package that uses a hierarchical heating process that cures a lid sealant, thereby securing the lid to the substrate, and then reflows (i.e., melts and cools) the TIM, thereby adhering the TIM to both the chip and lid. This hierarchical heating process ensures that the TIM has the above-mentioned characteristics (i.e., a predetermined minimum thickness and registration to the top surface of the chip) and further provides robust process windows for high-yield, low-cost electronic package manufacturing.

Electronic package method and structure with cure-melt hierarchy

The invention is directed to an improved microelectronics device that reduces BEOL delamination by reducing the tensile stress imposed on the via which connects first level interconnects with the BEOL. Tensile stress imposed on the via is reduced by shifting the via towards the center of a silicon chip or alternatively shifting the UBM towards the corners of the silicon chip.

Via offsetting to reduce stress under the first level interconnect (FLI) in microelectronics packaging

A method attaches a semiconductor chip to a substrate, applies a thermal interface material to a top of the semiconductor chip, and positions a lid over the semiconductor chip typically attached to the substrate with an adhesive. The method applies a force near the distal ends of the lid or substrate to cause a center portion of the lid or substrate to bow away from the semiconductor chip and increases the central thickness of the thermal interface material prior to curing. While the center portion of the lid or substrate is bowed away from the semiconductor chip, the thermal interface material method increases the temperature of the assembly, thus curing the thermal interface material and lid adhesive. After the thermal interface material has and adhesive have cured, the method removes the force from near the distal ends of the lid or substrate to cause the center portion of the lid to return to a position closer to the semiconductor chip, creating a residual compressive stress in the thermal interface material thus improving thermal performance and thermal reliability.

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Beacon, NY, United States of America

Jiantao Zheng