Taiyo Yuden Co., Ltd.

Jiansong Liu

Tokihiro Nishihara

Shinji Taniguchi

Tsuyoshi Yokoyama

Masanori Ueda

Taisei Irieda

Kenya Hashimoto

Hiroomi Kaneko

A piezoelectric thin film resonator includes: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode facing each other across at least a part of the piezoelectric film; and an insertion film that is inserted between the lower electrode and the upper electrode, is located in an outer peripheral region within a resonance region where the lower electrode and the upper electrode face each other across the piezoelectric film, is located in a region that is located outside the resonance region and surrounds the resonance region, is not located in a center region of the resonance region, and includes a first part, which is located in the resonance region and has a first film thickness, and a second part, which is located outside the resonance region and has a second film thickness, the first film thickness being less than the second film thickness.

Piezoelectric thin film resonator with insertion film, filter, and multiplexer

A piezoelectric thin film resonator includes: a piezoelectric film located on a substrate; lower and upper electrodes facing each other across a part of the piezoelectric film; and an insertion film located between the lower and upper electrodes, located in a part of an outer peripheral region within a resonance region where the lower and upper electrodes face each other across the piezoelectric film, and not located in a center region of the resonance region, a first width in the resonance region of the insertion film in a first region, where the upper electrode is extracted from the resonance region, being greater than a third width in the resonance region in a third region other than a second region, where the lower electrode is extracted from the resonance region, and the first region, a second width in the resonance region in a second region being the third width or greater.

Piezoelectric thin film resonator, filter, and multiplexer

A piezoelectric thin film resonator includes: a substrate; a piezoelectric film located on the substrate; lower and upper electrodes facing each other across the piezoelectric film; a mass load film that is located at least one of a first side, which is closer to the upper electrode, of the piezoelectric film and a second side, which is closer to the lower electrode, of the piezoelectric film, separated from the upper and lower electrodes, and surrounds in plan view a resonance region at least in part, the lower and upper electrodes facing each other across the piezoelectric film in the resonance region; and an acoustic reflection layer that includes the resonance region and the mass load film in plan view, is located in or on the substrate, and includes an air gap or an acoustic mirror in which at least two layers with different acoustic characteristics are stacked.

A piezoelectric thin film resonator includes: a substrate; a lower electrode located on the substrate; a piezoelectric film that has a step on an upper surface thereof and is located on the lower electrode, a film thickness of the piezoelectric film inside the step being greater than a film thickness of the piezoelectric film outside the step; an upper electrode located on the piezoelectric film so that a resonance region is formed, the lower electrode and the upper electrode facing each other across the piezoelectric film in the resonance region, the resonance region including the step in plan view; and an insertion film located in the piezoelectric film, between the piezoelectric film and the lower electrode, or between the piezoelectric film and the upper electrode in at least a part of an outer peripheral region within the resonance region, and not located in a central region of the resonance region.

Piezoelectric thin film resonator, filter, and duplexer

A piezoelectric thin film resonator includes: an acoustic reflection layer including an air gap or an acoustic mirror; lower and upper electrodes facing each other in a stacking direction, at least a part of each of the lower and upper electrodes being located on or above the acoustic reflection layer; a piezoelectric film sandwiched between the lower and upper electrodes and including lower and upper piezoelectric films, at least a part of an end face of the piezoelectric film in a film thickness direction being located between outer outlines of the resonance region and the acoustic reflection layer in at least a part of a region surrounding a resonance region; and an insertion film inserted between the lower and upper piezoelectric films, located in at least a part of an outer peripheral region within the resonance region, and not located in a center region of the resonance region.

A piezoelectric thin film resonator includes: a substrate; a piezoelectric film located on the substrate; lower and upper electrodes facing each other across at least a part of the piezoelectric film; a first insertion layer located between the lower and upper electrodes and located in at least a part of an outer peripheral region within a resonance region in which the lower and upper electrodes face each other across the piezoelectric film, the first insertion layer being not located in a center region of the resonance region; and a second insertion layer located between the lower and upper electrodes and located in at least a part of the outer peripheral region, the second insertion layer being not located in the center region, a position of an edge of the second insertion layer being different from a position of an edge of the first insertion film in the resonance region.

A piezoelectric thin film resonator includes: a piezoelectric film located on a substrate, and formed of stacked lower and upper piezoelectric films; lower and upper electrodes facing each other across at least a part of the piezoelectric film; and an insertion film inserted between the lower and upper piezoelectric films, wherein an air gap including a resonance region where the lower and upper electrodes face each other across the piezoelectric film and being larger than the resonance region is located under the lower electrode, and a multilayered film formed of the lower piezoelectric film, the insertion film, and the upper piezoelectric film is located in at least a part of a region located further out than an outer outline of the resonance region, further in than an outer outline of the air gap, and surrounding the resonance region, and is not located in a center region of the resonance region.

A piezoelectric thin film resonator includes: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode located to sandwich the piezoelectric film; a load film formed from patterns in a resonance region in which the lower electrode and the upper electrode face each other across the piezoelectric film, wherein the patterns are formed so as to surround a center of the resonance region and intersect with a pathway extending from the center to an outer periphery of the resonance region.

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Tokyo, Japan

Jiansong Liu