Skyworks Global Pte. Ltd.

Skyworks Solutions, Inc.

Jiansong Liu

Kwang Jae Shin

Yiliu Wang

Chun Sing Lam

Alexandre Augusto Shirakawa

Benfeng Zhang

Jae Hyung Lee

Benjamin Paul Abbott

Yuhao Liu

Yosuke Hamaoka

Jong Duk Han

Gong Bin Tang

Nan Wu

Jie Zou

Chih-Ming Lin

Tomoya Komatsu

Stephane Richard Marie Wloczysiak

Yasufumi Kaneda

Li Chen

Xianyi Li

A bulk acoustic wave resonator comprises a piezoelectric material layer, a first metal layer disposed on the upper surface of the piezoelectric material layer, a second metal layer disposed on the lower surface of the piezoelectric material layer, and a laterally distributed raised frame including a first raised frame disposed on the upper surface of the first metal layer and having an inner raised frame section with a tapered portion and a non-tapered portion and an outer raised frame section, and a second raised frame disposed beneath the first metal layer and the outer raised frame section, but not beneath the inner raised frame section, the inner raised frame section being laterally disposed from a central active region of the bulk acoustic wave resonator by a first distance, the outer raised frame section being laterally disposed from the central active region by a second distance greater than the first distance.

Radio frequency acoustic device with laterally distributed reflectors

Aspects of this disclosure relate to an acoustic wave device with a plurality of piezoelectric layers positioned laterally relative to each other between two electrodes. One of the piezoelectric layers has a different property than another of the piezoelectric layers. Examples of the different property include c-axis orientation, doping concentration, dopant material, and piezoelectric material. At least part of each of the piezoelectric layers can be in a main acoustically active region of the acoustic wave device.

Acoustic wave device having multiple piezoelectric layers between electrodes

A filter is disclosed. The filter can be a band pass filter or a band rejection filter. The filter can have bulk acoustic wave resonators. The filter can include a shunt bulk acoustic wave resonator and a series bulk acoustic wave resonator. The shunt bulk acoustic wave resonator and the series bulk acoustic wave resonator include different raised frame structures. The different raised frame structures contribute to one of the shunt bulk acoustic wave resonator or the series bulk acoustic wave resonator to have a higher quality factor below a resonant frequency than the other.

Filters with bulk acoustic wave devices

Methods of manufacturing bulk acoustic wave resonators are disclosed. During a common processing step, a first patterned mass loading layer for a first bulk acoustic wave resonator is formed and a second patterned mass loading layer for a second bulk acoustic wave resonator is formed. The first patterned mass loading layer has a different density than the second patterned mass loading layer.

Methods of manufacturing bulk acoustic wave resonators with patterned mass loading layers

Aspects of this disclosure relate to bulk acoustic wave resonators with patterned mass loading layers. Two different bulk acoustic wave resonators of an acoustic wave filter and/or an acoustic wave die have respective patterned mass loading layers with different densities. The patterned mass loading layers contribute to the two different bulk acoustic wave resonators having different respective resonant frequencies. Related bulk acoustic wave devices, filters, acoustic wave dies, radio frequency modules, wireless communication devices, and methods are disclosed.

Bulk acoustic wave resonators with patterned mass loading layers

Aspects of this disclosure relate to a bulk acoustic wave device that includes a multi-layer raised frame structure. The multi-layer raised frame structure includes a first raised frame layer positioned between a first electrode and a second electrode of the bulk acoustic wave device. The first raised frame layer has a lower acoustic impedance than the first electrode. The first raised frame layer and the second raised frame layer overlap in an active region of the bulk acoustic wave device. Related filters, multiplexers, packaged modules, wireless communication devices, and methods are disclosed.

Multi-layer raised frame in bulk acoustic wave device

Methods related to gradient raised frames in film bulk acoustic resonators. According to certain aspects, a method for fabricating a film bulk acoustic resonator device can include: forming a first metal layer over a substrate; forming a piezoelectric layer; forming a second metal layer, the piezoelectric layer positioned between the first and second metal layers; and forming a gradient raised frame implemented relative to one of the first and second metal layers and configured to improve reflection of lateral mode waves and to reduce conversion of main mode waves into lateral mode waves.

Methods related to gradient raised frames in film bulk acoustic resonators

Aspects of this disclosure relate to acoustic wave filters with bulk acoustic wave resonators. An acoustic wave filter can include a first bulk acoustic wave resonator configured to excite an overtone mode as a main mode and a second bulk acoustic wave resonator having a fundamental mode as a main mode.

Acoustic wave filter with overtone mode resonator and fundamental mode resonator

Aspects of this disclosure relate to a bulk acoustic wave device with a multi-gradient raised frame. The bulk acoustic wave device includes a first electrode, a second electrode, a piezoelectric layer positioned between the first electrode and the second electrode, and a multi-gradient raised frame structure configured to cause lateral energy leakage from a main acoustically active region of the bulk acoustic wave device to be reduced. The multi-gradient raised frame structure is tapered on opposing sides.

Bulk acoustic wave device with multi-gradient raised frame

A filter with bulk acoustic wave devices is disclosed. The filter includes a first bulk acoustic wave resonator and a second bulk acoustic wave resonator. The first bulk acoustic wave resonator includes a first raised frame structure. The first raised frame structure is a multi-layer raised frame structure. The second bulk acoustic wave resonator includes a second raised frame structure. The first raised frame structure has at least one more raised frame layer than the second raised frame structure.

Filter with bulk acoustic wave device having raised frame structure

Aspects of this disclosure relate to a bulk acoustic wave device with a multi-gradient raised frame. The bulk acoustic wave device includes a first electrode, a second electrode, a piezoelectric layer positioned between the first electrode and the second electrode, and a multi-gradient raised frame structure. The multi-gradient raised frame structure includes a first raised frame layer and a second raised frame layer. The second raised frame layer extends beyond the first raised frame layer. The second raised frame layer is tapered on opposing sides.

Multi-gradient raised frame in bulk acoustic wave device

Aspects of this disclosure relate to acoustic wave filters with bulk acoustic wave resonators configured to excite an overtone mode as a main mode. A bulk acoustic wave resonator of the filter can include a plurality of stacked piezoelectric layers positioned between a pair of electrodes.

Acoustic wave filter with overtone mode resonators

Aspects of this disclosure relate to an acoustic wave filter that includes a series a bulk acoustic wave resonator having a plurality of anti-resonant frequencies that impact a passband of the acoustic wave filter. Related bulk acoustic wave resonators, radio frequency modules, wireless communication devices, and methods of filtering radio frequency signals are disclosed.

Bulk acoustic wave resonator having multiple anti-resonant frequencies

Aspects of this disclosure relate to an acoustic wave filter that includes a shunt a bulk acoustic wave resonator having a plurality of resonant frequencies that impact a passband of the acoustic wave filter. Related bulk acoustic wave resonators, radio frequency modules, wireless communication devices, and methods of filtering radio frequency signals are disclosed.

Bulk acoustic wave resonator having multiple resonant frequencies

Aspects of this disclosure relate to a bulk acoustic wave device with a multi-layer raised frame. The bulk acoustic wave device includes a first electrode, a second electrode, a piezoelectric layer positioned between the first electrode and the second electrode, and a multi-layer raised frame structure configured to cause lateral energy leakage from a main acoustically active region of the bulk acoustic wave device to be reduced. The multi-layer raised frame structure includes a first raised frame layer embedded in the piezoelectric layer and a second raised frame layer. The first raised frame layer has a lower acoustic impedance than the piezoelectric layer.

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Irvine, CA, United States of America

Jiansong Liu