International Business Machines Corporation

Elpis Technologies Inc.

Jianshi Tang

Shu-Jen Han

Qing Cao

Ning Li

Takashi Ando

Reinaldo Ariel Vega

Praneet Adusumilli

Damon B Farmer

John Rozen

Teodor Krassimirov Todorov

Ying He

Douglas M Bishop

Pau-Chen Cheng

John Jacob Yurkas

Ramachandran Muralidhar

Xiao Hu Liu

John Albrecht Ott

Huan Hu

Bharat Kumar

Methods of forming variable-resistance devices include forming a variable-resistance layer between a first terminal and a second terminal from a material that varies in resistance based on an oxygen concentration. An electrolyte layer is formed over the variable-resistance layer from a material that is stable at room temperature and that conducts oxygen ions in accordance with an applied voltage. A conductive gate layer is formed over the electrolyte layer.

Three-terminal oxygen intercalation neuromorphic devices

Chemical sensors and methods of forming and making the same include an input terminal and an output terminal. A negative capacitance structure is configured to control a current passing horizontally from the input terminal to the output terminal, and has a first and second metal layer that are arranged vertically with respect to one another, and a ferroelectric layer positioned between the first and second metal layers. An electrode is in electrical contact with the negative capacitance structure, and is configured to change potential, to exceed a threshold, thereby triggering a discontinuous polarization change in the negative capacitance structure.

Sensors based on negative capacitance field effect transistors

Devices with settable resistance and methods of forming the same include forming vertical dielectric structures from heterogeneous dielectric materials on a first electrode. A second electrode is formed on the vertical dielectric structures.

CBRAM with controlled bridge location

A method of fabricating a neuromorphic device includes forming a variable-resistance layer between a first terminal and a second terminal, the variable-resistance layer varies in resistance based on an oxygen concentration in the variable-resistance layer. The method further includes forming an electrolyte layer over the variable-resistance layer that is stable at room temperature and that conducts oxygen ions in accordance with an applied voltage. The method further includes forming a gate layer over the electrolyte layer to apply a voltage on the electrolyte layer and the variable-resistance layer, the gate layer formed using an oxygen scavenging material.

Neuromorphic device with oxygen scavenging gate

A method is presented for enabling heat dissipation in resistive random access memory (RRAM) devices. The method includes forming a first thermal conducting layer over a bottom electrode, depositing a metal oxide liner over the first thermal conducting layer, forming a second thermal conducting layer over the metal oxide liner, recessing the second thermal conducting layer to expose the first thermal conducting layer, and forming a top electrode in direct contact with the first and second thermal conducting layers.

Resistive memory with embedded metal oxide fin for gradual switching

A method for manufacturing a semiconductor device includes forming a first dielectric layer on a substrate, forming a carbon nanotube (CNT) layer on the first dielectric layer, forming a second dielectric layer on the carbon nanotube (CNT) layer, patterning a plurality of trenches in the second dielectric layer exposing corresponding portions of the carbon nanotube (CNT) layer, forming a plurality of contacts respectively in the plurality of trenches on the exposed portions of the carbon nanotube (CNT) layer, performing a thermal annealing process to create end-bonds between the plurality of the contacts and the carbon nanotube (CNT) layer, and depositing a passivation layer on the plurality of the contacts and the second dielectric layer.

N-type end-bonded metal contacts for carbon nanotube transistors

A neuromorphic semiconductor device includes a copper-based intercalation channel disposed on an insulative layer, a source contact and a drain contact of a substrate. A copper-based electrolyte layer is disposed on the copper-based intercalation channel and a copper-based gate electrode is disposed on the copper-based electrolyte layer.

Neuromorphic device driven by copper ion intercalation

Chemical sensors include a functionalized electrode configured to change surface potential in the presence of an analyte. A piezoelectric element is connected to the functionalized electrode. A piezoresistive element is in contact with the piezoelectric element.

Ultrasensitive sensor based on a piezoelectric transistor

Vertically stacked memory devices and methods of manufacture are provided. The structures include a substrate stack including a first row of horizontal electrodes disposed over a first insulating layer and first insulating layer disposed over a substrate. The substrate stack further includes a second row of horizontal electrodes separated from the first row of horizontal electrodes by a second insulating layer, and the first row of horizontal electrodes is form over and substantially parallel to the second row of horizontal electrodes. A third insulating layer is formed over the second row of horizontal electrodes. A plurality of vertical gate trenches formed through the third insulating layer, the second row of horizontal electrodes, the second insulating layer, the first row of horizontal electrodes and the first insulating layer. The plurality of vertical gate trenches filled with a layer of channel material, a layer of electrolyte material and filled with a metal.

Vertical intercalation device for neuromorphic computing

A drug delivery system includes a substrate, an integrated sensor disposed on the substrate, a drug delivery element disposed on the substrate, and a control unit coupled to the integrated sensor and the drug delivery element. The integrated sensor includes first and second electrodes disposed on a first surface of the substrate. The drug delivery element includes a reservoir disposed on the first surface of the substrate, a thermally active polymer enclosing the reservoir, and a heating coil disposed over the thermally active polymer. The control unit is configured to measure a biological parameter by measuring a voltage difference between the first and second electrodes of the integrated sensor, and to apply a trigger signal to the heating coil of the drug delivery element responsive to the measured biological parameter indicating a designated condition to heat up the thermally active polymer to selectively release a drug from the reservoir.

Controlled drug delivery in point-of-care drug delivery system based on real-time monitoring with integrated sensor

A method of forming a memory device that includes depositing a first dielectric material within a trench of composed of a second dielectric material; positioning a nanotube within the trench using chemical recognition to the first dielectric material; depositing a dielectric for cation transportation within the trench on the nanotube; and forming a second electrode on the dielectric for cation transportation, wherein the second electrode is composed of a metal.

Scaled nanotube electrode for low power multistage atomic switch

Tapered resistive memory devices with interface dipoles are provided. In one aspect, a ReRAM device includes: a bottom electrode; a core dielectric that is thermally conductive disposed on the bottom electrode; an oxide resistive memory cell disposed along outer sidewalls of the core dielectric, wherein the oxide resistive memory cell has inner edges adjacent to the core dielectric, and outer edges that are tapered; an outer coating disposed adjacent to the outer edges of the oxide resistive memory cell; and a top electrode disposed on the core dielectric, the oxide resistive memory cell, and the outer coating. A method of forming a ReRAM device as well as a method of operating a ReRAM device are also provided.

Tapered resistive memory with interface dipoles

A semiconductor device with an array of vertically stacked electrochemical random-access memory (ECRAM) devices, includes holes formed in a vertical stack of horizontal electrodes. The horizontal electrodes are horizontally aligned and stacked vertically at different vertical levels within the vertical stack and separated by first fill layers. The semiconductor device includes a stack deposition, including a channel layer, and an electrolyte layer, formed over the vertical stack and holes. Selector layers fill holes. The selector layers include an inner selector layer and outer selector layers. The channel layer, the electrolyte layer and outer selector layers are recessed to the inner selector layer and a fill layer is deposited over the vertical stack. The fill layer has been reduced down to the top of the inner selector layer.

Methods of using and making chemical sensors include exposing a functionalized electrode to a substance to be tested. The functionalized electrode is electrically connected to a sensor having a piezoelectric element and a piezoresistive element. A voltage on the functionalized electrode controls a resistance of the piezoresistive element. A current is measured passing through the piezoresistive element. The presence of the analyte is determined based on the measured current.

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Elmsford, NY, United States of America

Jianshi Tang