Intel Corporation

Jiansheng Xu

Walid M Hafez

Chia-Hong Jan

Joodong Park

Chen-Guan Lee

En-Shao Liu

An integrated circuit structure comprises a base and a plurality of metal levels over the base. A first metal level includes a first dielectric material. The first metal level further includes a first plurality of interconnect lines in the first dielectric material, wherein the first plurality of interconnect lines in the first metal level have variable widths from relatively narrow to relatively wide, and wherein the first plurality of interconnect lines have variable heights based on the variable widths, such that a relatively wide one of the first plurality of interconnect lines has a taller height from the substrate than a relatively narrow one of the first plurality of interconnect lines, and a shorter distance to a top of the first metal level.

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Portland, OR, United States of America

Jiansheng Xu