Ak Optics Technology Co., Ltd.

Boe Technology Group Co., Ltd.

Chengdu Boe Optoelectronics Technology Co., Ltd.

Jianpeng Liu

Chengmin Li

Dong Yan

Linzi Wang

Tang Zhang

Wei He

Yu Zhao

Yanxia Xin

Qun Ma

Xiaoyan Yang

Xiaoyun Wang

Xiping Li

Xueping Li

Haibo Li

Yihao Wu

Cheng Tan

Yong Zhuo

Longmao Ye

Kui Fang

Hongda Jiao

Xiaochao Ma

The present application provides a displaying base plate and a displaying device, which relates to the technical field of displaying. The displaying device can ameliorate the problem of screen greening caused by electrostatic charges, thereby improving the effect of displaying. The displaying base plate includes an active area and a non-active area connected to the active area, the non-active area includes an edge region and a first-dam region, and the first-dam region is located between the active area and the edge region; the displaying base plate further includes: a substrate; an anti-static layer disposed on the substrate, wherein the anti-static layer is located at least within the edge region; and a driving unit and a touch unit that are disposed on the substrate, wherein the driving unit is located within the active area.

Display substrate and display apparatus

A self-calibration apparatus and method for a real-time temperature measurement system of a MOCVD device belong to the technical field of semiconductor manufacturing. The apparatus comprises a MOCVD reactor chamber () and an optical detector (). The MOCVD reactor chamber () comprises an epitaxial wafer (). A detection window () is provided on the top of the MOCVD reactor chamber (). The optical detector () emits detection light beams whose wavelengths are respectively &#x3bb;and &#x3bb;toward the epitaxial wafer () through the detection window (). The detection light beams are reflected by the epitaxial wafer () to form reflected light beams which are detected by the optical detector (). In the method, points corresponding to the actual thermal radiation ratios are depicted on the theoretical thermal radiation ratio-temperature curve according to actual thermal radiation ratios, and values of the temperatures T corresponding to the points are substituted into formulas to obtain mand mrespectively. With the method and apparatus, self-calibration of the real-time temperature measurement system of a MOCVD device is realized, thus ensuring consistent and accurate measurements of a growth temperature of the epitaxial wafer.

Self-calibration apparatus and method for real-time temperature measurement system of MOCVD device

An apparatus and a method for online and real-time detection of a temperature of an epitaxial wafer () belong to the technical field of semiconductor detection. The apparatus comprises a MOCVD reaction chamber (), a light source (), a beam splitter (), a reference light detector (), a reflected light detector () and a data acquisition unit (). The method, on the basis of the apparatus, can obtain a thermal radiation attenuation factor caused by a coating of a reactor chamber window and a reflectance attenuation factor caused by the coating of the reactor chamber window for the epitaxial wafer (). The apparatus and method can eliminate influence of the coating of the reactor chamber window on an online and real-time temperature detection value, thereby improving the accuracy of the online and real-time temperature detection value.

Apparatus and method for online and real-time detection of temperature of epitaxial wafer

A device for detecting a two-dimensional morphology of a wafer substrate in real time. The device comprises: a first calculation module, a second calculation module and an analysis module, wherein the first calculation module calculates the curvature Cbetween any two points of incidence on the wafer substrate in an X direction of a substrate to be detected according to position signals of N light spots; the second calculation module calculates the curvature Cat any one point of incidence on the wafer substrate in a moving direction, i.e. a Y direction, of the substrate to be detected according to the position signals of N light spots. The device can be adapted to a sapphire substrate on a graphite disc which rotates at a high speed.

Apparatus for automatically and quickly detecting two-dimensional morphology for wafer substrate in real time

Growing community of inventors

Beijing, China

Jianpeng Liu