Advanced Micro Devices Corporation

Semicaps Pte Ltd

Advanced Mircor Devices, Inc.

Jiann Min Chin

Michael R Bruce

Venkat Krishnan Ravikumar

Rama Rao Goruganthu

Brennan V Davis

Kin Leong Pey

Glen P Gilfeather

Zhihong Mai

Lian Ser Koh

Choon Meng Chua

Soon Huat Tan

Gregory A Dabney

Richard Jacob Wilcox

Pey Kin Leong

Gopinath Ranganathan

Lihong Cao

Shei Lay Phoa

Shawn M McBride

Wen Tsann Lua

Nathan Linarto

Yi Xuan Seah

Joel Yang Kwang Wei

Palaniappan Muthupalaniappan

Jacob Phang

Hoo-Yin Ng

A reconfigurable optic probe is used to measure signals from a device under test. The reconfigurable optic probe is positioned at a target probe location within a cell of the device under test. The cell including a target net to be measured and non-target nets. A test pattern is applied to the cell and a laser probe (LP) waveform is obtained in response. A target net waveform is extracted from the LP waveform by: i) configuring the reconfigurable optic probe to produce a ring-shaped beam having a relatively low-intensity region central to the ring-shaped beam; (ii) re-applying the test pattern to the cell at the target probe location with the relatively low-intensity region applied to the target net and obtaining a cross-talk LP waveform in response; (iii) normalizing the cross-talk LP waveform; and (iv) determining a target net waveform by subtracting the normalized cross-talk LP waveform from the LP waveform.

Electro-optic waveform analysis process

A control system for placing an optic probe includes a receiver circuit that receives reflected light produced from the optic probe and provides a laser probe (LP) waveform of the reflected light in response to an activation of a trigger signal. A combinational logic analysis (CLA) processor provides a CLA waveform in response to simulating an optical response at a target location on a surface of a cell of a device under test to a test pattern. A test controller receives the CLA waveform and the LP waveform, and has a first output for providing the trigger signal, a second output for providing the test pattern, and a third output for providing a position signal. The test controller updates the position signal to move the optic probe closer to the target location according to a degree of fit between the LP waveform and the CLA waveform.

Probe placement for laser probing system

Apparatus for and methods of inspection using laser beam induced alteration are provided. In one aspect, an apparatus is provided that includes a laser scanning microscope for directing a laser beam at a circuit structure and a source for biasing and thereby establishing a power condition in the circuit structure. A detection circuit is provided for detecting a change in the power condition in response to illumination of the circuit structure by the laser beam and generating a first output signal based on the detected change. A signal processor is provided for processing the first output signal and generating a second output signal based thereon. A control system is operable to scan the laser beam according to a pattern that has a plurality of pixel locations, whereby the laser beam may be moved to a given pixel location and allowed to dwell there for a selected time before being moved to another pixel location.

Laser beam induced phenomena detection

For temperature cycling at a material of an IC (integrated circuit) package, a laser beam is directed to the material such that the material absorbs the laser beam to become heated. A laser controller adjusts at least one property of the laser beam until the temperature of the material reaches a predetermined high-end temperature. The present invention may be used for a flip-chip IC package with the laser beam being directed toward a back-side of an IC die that is exposed on the IC package. In that case, the laser beam is comprised of light having a wavelength that is within a transmission region of a semiconductor material of the IC die such that the laser beam reaches the material on the front side of the IC die.

Method and system for temperature cycling at an interface between an IC die and an underfill material

An integrated circuit die having silicon on insulator (SOI) structure is analyzed in a manner that enhances the ability to detect photoemissions from the die. According to an example embodiment of the present invention, one of two or more lenses having a higher relative photon count is identified and used to analyze a semiconductor die. The die has at least a portion of the insulator of the SOI structure exposed, and photon emissions are detected using each lens via the exposed insulator in response to the die being stimulated. The number of photons detected using each lens is compared, and the lens having a higher photon count rate is identified, optimizing the photon count for the particular type of die preparation used to expose the insulator. The identified lens is then used with the high-speed detector to detect photoemissions from the die, and the detected photoemissions are used to analyze the die.

Optical analysis for SOI integrated circuits

Growing community of inventors

Singapore, Singapore

Jiann Min Chin