Taiwan Semiconductor Manufacturing Comp. Ltd.

Jiann-Jong Wang

Chin-Min Lin

Yeou-Lang Hsieh

Chwen-Ming Liu

Chung Yu Wang

Ding-Dar Hu

Chung-Chieh Liu

Horng-Jer Hsiue

Ching-Kunn Huang

Organic-adhesive tapes are often used to secure and protect the bumps during wafer processing after bump formation. While residual organic-adhesive tape may remain on the wafer after tape de-lamination, applying a bump template layer on the bumps before laminating the tape allows any residue to be removed afterwards and results in a residue-free wafer.

Tape residue-free bump area after wafer back grinding

A method and system for improving planarization and uniformity of dielectric layers for providing improved optical efficiency in CCD and CMOS image sensor devices. In various embodiments, a dielectric planarization method for achieving better optical efficiency includes first depositing a first dielectric having an optically transparent property on and around a metal pattern. Optical sensors are formed in or on the substrate in areas between metal features. The metal pattern protects a sensor situated therebetween and thereunder from electromagnetic radiation. After the first dielectric layer is polished using CMP, a slanted or inclined surface is produced but this non-uniformity is eliminated using further planarization processes that produce a uniform total dielectric thickness for the proper functioning of the sensor.

Methods for planarization of dielectric layer around metal patterns for optical efficiency enhancement

The present invention provides a method for performing a pre-amorphization implant which reduces damage to the resist protect oxide layer and reduces leakage current between the gate and substrate. Two novel approaches are provided, both of which use a photoresist mask to protect the RPO from implant damage during PAI. In the first approach, the PAI is performed immediately after RPO etching to form contact openings. Thus the original photoresist mask is still on the RPO. In the second approach, the photoresist mask is re-formed prior to PAI to protect the RPO from implant damage.

Method for performing a pre-amorphization implant (PAI) which provides reduced resist protect oxide damage and reduced junction leakage

A method for forming an anti-reflective-coating(ARC) layer is described. This ARC layer performs not only in its capacity to reduce reflections from its subjacent metal layer during the metal patterning photoresist exposure, but also serves as an effective etch inhibitor during subsequent via etching. Of particular importance is the ability provided by this ARC layer to sustain its etch resistance during considerable over etching such as is required when vias of different depths are to be opened. The ARC layer differs from the conventional titanium nitride ARC layer in that it has a base layer of titanium below the titanium nitride portion. It is this titanium layer and an optional intermediate Ti rich layer that sustains the over etch. Additionally, the titanium forms an improved bonding with the metal beneath providing reduced via contact resistance and greater via stability and consistency.

Growing community of inventors

Hsin-Chu, Taiwan

Jiann-Jong Wang