United Microelectronics Corp.

Jiann-Fu Chen

Yi-Ching Wu

Ming-Te Chen

Lian-Hua Shih

Chin-Jen Cheng

Chih-Hsiang Shiau

A method for fabricating a metal-insulator-metal (MIM) capacitor includes providing a substrate comprising a bottom electrode, forming a dielectric layer positioned on the bottom electrode, and forming a top electrode positioned on the dielectric layer. The dielectric layer includes a silicon nitride film, the silicon nitride film has a plurality of Si&#x2014;H bonds and a plurality of N&#x2014;H bonds, and a ratio of Si&#x2014;H bonds to N&#x2014;H bonds being equal to or smaller than 0.5.

Method for fabricating a metal-insulator-metal capacitor

A metal-insulator-metal (MIM) capacitor that includes a silicon nitride (SiN) dielectric film is disclosed. The MIM capacitor includes a bottom electrode, a top electrode and a dielectric layer positioned between the bottom electrode and the top electrode. The dielectric layer includes a silicon nitride film that has a plurality of silicon-hydrogen bonds and a plurality of nitride-hydrogen bonds. A ratio of silicon-hydrogen bonds to nitride-hydrogen bonds is equal to or smaller than 0.5. Accordingly, the nitrogen-rich and compressive silicon nitride film can improve the breakdown voltage of the MIM capacitor.

Metal-insulator-metal capacitor and method for fabricating the same

A semiconductor structure and a method of fabrication there-for are provided. The semiconductor structure comprises a substrate, a dielectric layer disposed over the substrate, a hydrophilic material layer disposed over the dielectric layer, and a hardmask layer disposed over the hydrophilic material layer. It is noted that, the edge of the semiconductor structure may be polished after the hydrophilic material layer is formed over the dielectric layer and before the hardmask layer is formed over the hydrophilic material layer.

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Hsin-Chu, Taiwan

Jiann-Fu Chen