Boe Technology Group Co., Ltd.

Jianming Sun

Qingrong Ren

Dongsheng Li

Yingwei Liu

Wenlin Zhang

Huili Wu

Rui Huang

Wei Yang

Ce Ning

Hehe Hu

Shipei Li

Haisheng Wang

Yingming Liu

Guangcai Yuan

Song Liu

Zhengliang Li

Xiaolong He

Feng Guan

Liangjian Li

Jianhua Du

Qianqian Bu

Xiaochen Ma

Woobong Lee

Yu Wen

Fengchao Wang

Ben Niu

The present disclosure relates to a thin-film transistor, a method for preparing the same, and a display substrate. The method for preparing the thin-film transistor includes the steps of forming a source electrode, a drain electrode, and an active layer, in which the step of forming the source electrode, the drain electrode, and the active layer includes: forming a first thin film from a first metal oxide material in an atmosphere of a first oxygen content; and forming a second thin film from a second metal oxide material in an atmosphere of a second oxygen content, in which the first thin film is configured to form the active layer, the second thin film is configured to form a source electrode and a drain electrode, and the second oxygen content is less than the first oxygen content.

Thin-film transistor and method for preparing the same, display substrate and display device

A photosensitive element includes a first film layer, a second film layer and a third film layer. The first film layer, the second film layer and the third film layer are in a sequentially stacked structure, the first film layer is a p-type copper indium gallium selenide (CIGS) layer, the second film layer is an i-type CIGS layer, and the third film layer is an n-type film layer, and the first film layer, the second film layer and the third film layer form a PIN junction structure.

Photosensitive element and manufacturing method thereof, display panel and manufacturing method thereof

A photodetector and a manufacture method thereof, a touch substrate and a display panel are provided. The photodetector includes: a substrate; a polysilicon layer on the substrate including a first doped region and a second doped region; a transparent conductive film covering the first doped region of the polysilicon layer; and a metal electrode on the second doped region of the polysilicon layer. The conductive film, the metal electrode and the polysilicon layer constitute a photosensitive device.

Photodetector and manufacture method thereof, touch substrate and display panel

The present disclosure discloses a thin film transistor and a manufacturing method thereof, an array substrate and a display device, and belongs to the field of semiconductor display technology. The active layer of the thin film transistor is made of a CIGS material. By manufacturing the active layer of the thin film transistor with the CIGS material, and the crystal defects of the CIGS are less than LTPS and IGZO, the mobility of the thin film transistor is higher, and the switching speed of the thin film transistor is faster, thereby being advantageous to further improve the resolution of the display device.

Thin film transistor and manufacturing method thereof, array substrate and display device

A display substrate, a display panel, and a display device. The display substrate includes a substrate, and a plurality of polygonal pixels arranged in an array on the substrate. Each polygonal pixel includes a plurality of sub-pixels and a photoelectric sensor. An orthographic projection of the plurality of sub-pixels on the substrate and an orthogonal projection of the photoelectric sensor on the substrate do not overlap with each other. The display substrate, the display panel and the display device of the embodiments of the present disclosure can maximize the collection of optical signals, thereby improving the efficiency of the photoelectric sensor and the accuracy of a fingerprint identification in certain applications.

Display substrate with photoelectric sensor having regions connected with each other, display panel and display device

The present application discloses a photodiode structure including multiple light trapping elements. Each light trapping element includes an N-type silicon layer with a recessed structure therein, an intrinsic silicon layer disposed overlying the N-type silicon layer including a side region and a bottom region inside the recessed structure, and a P-type silicon layer disposed as an inner layer overlying the intrinsic silicon layer inside the recessed structure. A radial PIN junction is formed around a nominal axis of the recessed structure.

X-ray detector substrate based on photodiodes with a radial pin junction structure

A photodetector, a driving method thereof, a display panel and a display device are disclosed in the field of display technology. The photodetector includes photosensitive element, a voltage divider, a switch circuitry and a detection transistor. The photosensitive element and the voltage divider are connected in series between two power terminals. The gate of the detection transistor is connected to a first voltage dividing node between the photosensitive element and the voltage divider. Therefore, when the resistance of the photosensitive element becomes smaller under illumination, the voltage of the first voltage dividing node correspondingly rises, and the detection transistor is turned on and may output a current to a read line under the driving of a DC power terminal. The magnitude of the current is determined by the magnitude of the voltage of the first voltage dividing node. Since the current output by the detection transistor under the driving of the DC power terminal is large, the influence of the leakage current of the detection transistor on the output current may be negligible, thereby effectively improving the accuracy of fingerprint identification based on the output current.

Photodetector and driving method thereof, display panel and display device

The present disclosure relates to the field of display, in particular to a thin film transistor, a method for preparing the same, and a display device. The thin film transistor of the present disclosure includes a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode, a drain electrode, and a photoelectric conversion layer in contact with the gate electrode. The photoelectric conversion layer is configured to generate an induced potential in a light environment.

Thin film transistor, method for preparing the same, and display device

An optical detector includes a stacked structure, an active layer, a gate insulating layer, and a gate electrode. The stacked structure includes a first electrode, a photoelectric conversion layer, a second electrode, a first insulating layer, and a third electrode. The active layer is electrically coupled to one of the first electrode or the second electrode, and electrically coupled to the third electrode. The gate insulating layer is arranged on the active layer. The gate electrode is arranged on the gate insulating layer.

Optical detector, fabrication method thereof, fingerprint recognition sensor, and display device

The present disclosure provides a display panel, its manufacturing method and a display device. The manufacturing method of the display panel comprises: forming, on a substrate, a thin film transistor comprising a gate electrode, an active layer, a source electrode and a drain electrode; forming a hydrogen diffusion barrier layer that covers the entire substrate, wherein the hydrogen diffusion barrier layer is electrically conductive and is electrically connected to the drain electrode; and forming a photosensitive structure layer on the hydrogen diffusion barrier layer.

Display panel, its manufacturing method, and display device

A fingerprint identification sensor, a fingerprint identification method and an electronic device are disclosed. The fingerprint identification sensor includes a substrate; a fingerprint sensing element disposed on the substrate and including a thin film transistor, an off-state leakage current of the thin film transistor varying with the intensity of light irradiating onto an active area thereof; and a fingerprint identification light source arranged to emit light that irradiates onto a finger and is reflected thereby, the reflected light irradiating onto the active area of the thin film transistor. Thus, the fingerprint identification can be realized conveniently, and the fingerprint identification sensor has at least one of the advantages like high sensitivity and simple structure.

Fingerprint identification sensor, fingerprint identification method and electronic device

The present disclosure relates to a semiconductor device, an array substrate, and a method for fabricating the semiconductor device. The semiconductor device comprises a substrate, a thin film transistor formed on the substrate, and a first light detection structure adjacent to the thin film transistor, wherein the first light detection structure includes a first bottom electrode, a top electrode, and a first photo-sensing portion disposed between the first bottom electrode and the first top electrode, one of a source electrode and a drain electrode of the thin film transistor is disposed in the same layer as the first bottom electrode of the first light detection structure; the other of the source electrode and the drain electrode of the thin film transistor is used as the first top electrode.

Semiconductor device, array substrate and method for fabricating semiconductor device

The present disclosure provides an array substrate. The array substrate includes a substrate; and at least one ultraviolet (UV) detection structure. The UV detection structure includes a photosensitive pattern on the substrate, and a first electrode pattern and a second electrode pattern for providing an operating voltage for the at least one UV detection structure.

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Beijing, China

Jianming Sun