Nanyang Technological University

Massachusetts Institute of Technology

Sony Corporation

Jianmin Miao

Michael S Triantafyllou

Akio Takada

Ching Biing Yeo

Nan Wang

Ajay Giri Prakash Kottapalli

Mohsen Asadniaye Fard Jahromi

Pradeep Dixit

A chemical sensor for heavy metal detection is provided. The chemical sensor includes an inlet, a chamber in fluid communication with the inlet, and an outlet in fluid communication with the chamber. A working electrode is provided in the chamber. The working electrode includes a plurality of protrusions extending into a fluid flow path in the chamber beyond a boundary layer of the fluid flow path. The chemical sensor also includes a reference electrode, a counter electrode, and a plurality of contact pads electrically connected to respective ones of the working electrode, the reference electrode and the counter electrode.

Chemical sensor for heavy metal detection

According to embodiments of the present invention, a sensor for determining a flow parameter of a fluid is provided. The sensor includes a polymer membrane, an elongate microstructure extending from the polymer membrane, and a hydrogel coupled to at least a portion of the elongate microstructure, wherein the hydrogel and the elongate microstructure are arranged to cooperate to cause a displacement of the polymer membrane in response to a fluid flowing and interacting with the sensor, and wherein the sensor is configured to provide a measurement indicative of a flow parameter of the fluid based on the displacement of the polymer membrane. According to further embodiments of the present invention, a method for forming a sensor and a method of controlling a sensor are also provided.

Sensor, method for forming the same, and method of controlling the same

An initial pulse current cycle is supplied to at least one through-hole via. The pulse current cycle includes a forward pulse current. The magnitude of the forward pulse current is lower than the magnitude of the reverse pulse current. A corresponding forward and reverse current density is generated across the via causing conductive material to be deposited within the via, thereby reducing the effective aspect ratio of the via. At least one subsequent pulse current cycle is supplied. The magnitudes of the forward and reverse pulse currents of the subsequent pulse current cycle are determined in relation to the reduced effective aspect ratio. A subsequent corresponding forward and reverse current density is generated across the through-hole via causing conductive material to be deposited within the via, thereby further reducing the effective aspect ratio of the via.

Method of electro-depositing a conductive material in at least one through-hole via of a semiconductor substrate

A micro-rotating device has a rotor(of diameter not more than 1.5 cm), a shaftthreaded through the rotor, and a shaft holderfor holding the shaft. The shaft holders are formed by etching an Si substrateto form multiple shaft receiving openings. The rotors and shafts too are formed from respective Si substrates. The rotorsare located over the shaft holders, and the shafts threaded through the rotorsinto the openingsand attached there by a wafer bonding process. Then the substrateis partitioned to give individual motor elements. Protrusionsextend from the rotor in the direction towards the stator to space the rotor from the shaft holder.

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Singapore, Singapore

Jianmin Miao