Ideal Power Inc.

Power Integrations, Inc.

Jiankang Bu

Alireza Mojab

Constantin Bulucea

Jeffrey Knapp

Robert Daniel Brdar

Vijay Parthasarathy

Sorin Stefan Georgescu

Alexei Ankoudinov

Yifan Jiang

Ruiyang Yu

Kelly Marcum

Mudit Khanna

R Daniel Brdar

Kelly E Marcum

Unidirectional hybrid switch. At least one example is a method operating a hybrid switch, the method comprising: sensing a voltage across an upper terminal and a lower terminal of the hybrid switch, the hybrid switch is forward biased when the upper terminal has higher voltage, and the hybrid switch is reverse biased when the lower terminal has higher voltage; when the hybrid switch is forward biased, selectively conducting a forward current from the upper terminal to the lower terminal by sharing the forward current between a FET switch and a BJT switch, the selectively conducting when a control terminal is asserted; and when the hybrid switch is reversed biased, non-selectively conducting a reverse current from the lower terminal to the upper terminal.

Unidirectional hybrid switch circuit

Bi-directional trench power switches. At least one example is a semiconductor device comprising: an upper base region associated with a first side of a substrate of semiconductor material; an upper-CE trench defined on the first side, the upper-CE trench defines a proximal opening at the first side and a distal end within the substrate; an upper collector-emitter region disposed at the distal end of the upper-CE trench; a lower base region associated with a second side of substrate; and a lower collector-emitter region associated with the second side.

System and method for bi-directional trench power switches

Semiconductor device with bi-directional double-base trench power switches

A semiconductor device including a dummy pillar and a plurality of racetrack pillars. The dummy pillar of semiconductor material extends in a first lateral direction. The plurality of racetrack pillars, including the semiconducting material, surrounds the dummy pillar. Each of the plurality of racetrack pillars has a first linear section, which extends in the first lateral direction, and a first rounded section to form a racetrack shape. The plurality of racetrack pillars includes a first racetrack pillar and a second racetrack pillar. The first racetrack pillar is disposed proximate to the dummy pillar and the second racetrack pillar surrounds the first racetrack pillar. The first racetrack pillar is disposed between the dummy pillar and the second racetrack pillar. The semiconductor device includes a plurality of spacing regions including a first spacing region that surrounds the dummy pillar and is disposed between the first racetrack pillar and the dummy pillar.

High voltage vertical semiconductor device with multiple pillars in a racetrack arrangement

Growing community of inventors

Temecula, CA, United States of America

Jiankang Bu