General Electric Company

Eastern Blue Technologies, Inc.

Jianjun Guo

Brian David Yanoff

Sergei Ivanovich Dolinsky

Geng Fu

Naresh Kesavan Rao

David Leo McDaniel

Biju Jacob

Peter Michael Edic

Yanfeng Du

Jonathan David Short

Yannan Jin

Adrian Ivan

Menachem Halmann

Richard Gordon Cronce

Xue Rui

Hua Qian

Habib Vafi

Floribertus P M Heukensfeldt Jansen

Feng Lin

Hao Lai

James Lindgren Malaney

Yimeng Lin

Xiao Jin

Jeffery Jon Shaw

Bruno Kristiaan Bernard De Man

John Eric Tkaczyk

James Wilson Rose

Ravindra Mohan Manjeshwar

Uwe Wiedmann

Naveen Stephan Chandra

Chang Lyong Kim

Changlyong Kim

Jiajiu Yang

William Todd Peterson

Vladimir Anatolievich Lobastov

Ibrahim Issoufou Kouada

German Guillermo Vera

Jonathan Alan Bowman

Yin Qian

An image sensor unit is disclosed that includes an array of image sensing pixels, arranged in a plurality of rows and a plurality of columns, wherein each pixel is individually addressable. Each row of pixels is controlled via a row control in communication with the row of pixels in the array via a row addressing line, and capable of selectively addressing one or more of the plurality of rows. Each column of pixels is controlled by a column control in communication with each column of pixels in the array via a column addressing line, and capable of selectively addressing one or more of the plurality of columns. A unit controller is configured to specify selective readout of one or more pixel readout signals by instructing the row and column control to address one or more specific rows and columns of the array. A flat panel image sensor may include image sensor chips mounted on a substrate, the substrate may include a plurality of openings, and each of the plurality of openings enables access to at least one image sensor unit of the image sensor units. Each image sensor chip may include at least one chip contact array where at least one contact of each image sensor unit is accessible through at least one opening. The flat panel image sensor also may include a printed circuit board ('PCB') attached to the substrate, which includes PCB contact arrays and each PCB contact array may be in alignment with and in electrical connection with a corresponding chip contact array using electrically adhesive paste. The substrate and the PCB may be aligned so that each ball of electrically conductive adhesive paste is in contact with one electrical contact pad to form an image sensor assembly.

Module and methods of assembly for large area flat panel detectors

The present approach relates to the use of detector elements (i.e., reference detector pixels) positioned under septa of an anti-scatter collimator. Signals detected by the reference detector pixels may be used to correct for charging-sharing events with adjacent pixels and/or to characterize or correct for focal spot misalignment either in real time or as a calibration step.

Reference detector elements in conjunction with an anti-scatter collimator

Various approaches are discussed for using four-side buttable CMOS tiles to fabricate detector panels, including large-area detector panels. Fabrication may utilize pads and interconnect structures formed on the top or bottom of the CMOS tiles. Electrical connection and readout may utilize readout and digitization circuitry provided on the CMOS tiles themselves such that readout of groups or sub-arrays of pixels occurs at the tile level, while tiles are then readout at the detector level such that readout operations are tiered or multi-level.

Radiation detector assembly

A detector is described having readout electronics integrated in the photodetector layer. The detector may be configured to acquire both energy-integrated and photon-counting data. In one implementation, the detector is also configured with control logic to select between the jointly generated photon-counting and energy-integrated data.

Dual-mode radiation detector

A SiPM tile includes SiPM arrays on a detector die, each of the SiPM arrays including a first plurality of microcells and a second plurality of reference microcells dispersed on the die, each reference microcell including an optically-opaque mask, a readout circuit each including a respective charge sensitive amplifier (CSA) connected to one of the reference microcells, each CSA configured to accumulate the dark current of the reference microcell during a selected time window, a hybrid temperature control circuit configured to receive an output signal from each CSA, and to determine the real-time temperature of the die based on the received output signal, to provide the real-time temperature to a temperature compensation and correction control unit that adjusts a cooling/heating system flow provided to the die, the adjustment based on the real-time temperature. A method for compensating the operating temperature variation of the SiPM tile is also disclosed.

Temperature compensation for silicon photomultiplier based detector

A silicon photomultiplier (SiPM) based detection system includes a plurality of scintillators, SiPMs, a front end circuit, adjustment circuits, and an energy and position processing unit. The SiPMs have a non-linear response to energy deposition corresponding to radiation detection. The adjustment circuit is configured to receive an analog signal from SiPMs, and to provide an adjusted analog signal, which is configured to simulate a signal corresponding to a linear response. The energy and position processing unit utilizes the adjusted signal to provide energy and position information of detected events in the detector block.

Systems and methods for detector output adjustment

A silicon photomultiplier array including a plurality of microcells arranged in rows and columns. A plurality of circuit traces connecting microcell output ports to the array pixel output port, with one or more impedance matching networks connected to at least one of the circuit traces. The impedance matching networks can be connected between each row circuit trace and the pixel output port. Impedance matching networks can be located between junctions of adjacent microcell output ports and row circuit traces.

Microcell interconnection in silicon photomultipliers

A method for determining depth-of-interaction correction in a PET system. The method includes modifying crystal and readout configuration to improve depth-dependent arrival profile of scintillation photons, creating a photon dispersion model within a scintillator crystal, measuring photon arrival profile of individual gamma ray event, deriving an estimated depth-of-interaction, and deriving a gamma ray event time based on a time stamp corrected with the estimated depth-of-interaction. The method further includes modeling dispersion at different depths of interaction within the scintillator crystal, providing a reflector layer to delay back-reflected photons, providing two respective readouts for the same gamma ray event from two respective pixels optically coupled by a backside reflector or modified crystal configuration, calculating a time difference of the photon arrival at the two pixels, and estimating the depth-of-interaction by applying a statistical weighting.

Method for improving timing resolution using depth of interaction correction in PET detector

The present approach relates to the use of reference pixels provided between the primary pixels of a detector panel. Coincidence circuitry or logic may be employed so that the measured signal arising from the same X-ray event may be properly, that is the signal measured at both a reference and primary pixel may be combined so as to provide an accurate estimate of the measured signal, at an appropriate location on the detector panel.

Pixel-design for use in a radiation detector

Some embodiments are associated with an input signal comprising a first and a second photon event incident on a photon-counting semiconductor detector. A relatively slow charge collection shaping amplifier may receive the input signal and output an indication of a total amount of energy associated with the superposition of the first and second events. A relatively fast charge collection shaping amplifier may receive the input signal and output an indication that is used to allocate a first portion of the total amount of energy to the first event and a second portion of the total amount of energy to the second event.

Apparatus and method for pile-up correction in photon-counting detector

The present approach relates to a detector design that allows detector-based wobble using an electronic control scheme. In one implementation, each detector pixel is divided into sub-pixels. The readout of the sub-pixels can be binned with minimal noise penalty to enable the detector wobble without physically shifting the detector or alternating the physical focal spot location, though, as discussed herein alternation of the focal spot location may be used in conjunction with the present approach to further improve radial and longitudinal imaging resolution as well as suppressing artifacts resulted by limited spatial sampling.

Computed tomography with detector wobble

A SiPM readout circuit includes a front-end circuit having amplifiers coupled to SiPM analog outputs, pixel readout channels coupled to amplifiers provide a timing signal representing gamma ray photon detection in individual SiPM, a block timing channel that creates a summed signal from all SiPMs, and generates a block timing signal and a validation signal, an energy channel that generates a summed energy signal and a two-dimensional position of the gamma ray photon detection in the block, and a control logic/processing circuit that performs a time stamp estimation method. Methods of determining the radiation event timing and a non-transitory computer-readable medium containing computer-readable instructions to implement the methods are disclosed.

Universal readout for silicon photomultiplier based detectors

Photomultipliers are disclosed which comprise circuitry for detecting photo electric events and generating short digital pulses in response. In one embodiment, the photomultipliers comprise solid state photomultipliers having an array of microcells. The microcells, in one embodiment, in response to incident photons, generate a digital pulse signal having a duration of about 2 ns or less.

Active pulse shaping of solid state photomultiplier signals

A silicon photomultiplier includes a plurality of microcells providing a pulse output in response to an incident radiation, each microcell including circuitry configured to enable and disable the pulse output. Each microcell includes a cell disable switch. The control logic circuit controls the cell disable switch and a self-test circuit. A microcell's pulse output is disabled when the cell disable switch is in a first state. A method for self-test calibration of microcells includes providing a test enable signal to the microcells, integrating dark current for a predetermined time period, comparing the integrated dark current to a predetermined threshold level, and providing a signal if above the predetermined threshold level.

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Ballston Spa, NY, United States of America

Jianjun Guo