Globalfoundries Singapore Pte. Ltd.

Chartered Semiconductor Manufacturing Ltd (corporation)

Jianhui Ye

Mei Sheng Zhou

Huang Liu

Liang Choo Hsia

Wei Lu

Chim Seng Seet

Alex K H See

Chun Hui Low

A composite etch stop layer which comprises primary and secondary stop layers is used to form contacts in a dielectric layer to contact regions in a substrate. The secondary etch stop layer includes a high-k dielectric material to achieve high etch selectivity with the dielectric layer during contact formation. The secondary stop layer is removed to expose the contact regions. Removal of the secondary stop layer is achieved with high selectivity to the materials therebelow.

Method of forming high-k dielectric stop layer for contact hole opening

A method of patterning conductive lines using a bottom anti-reflective coating (BARC) composed of Poly-p-phenylene sulfide (PPS) film 30 formed using a Physical Vapor Deposition (PVD) process. The PPS BARC 30 is easy to remove and has superior planarization. The method comprises:

Physical vapor deposition poly-p-phenylene sulfide film as a bottom

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Bristow, VA, United States of America

Jianhui Ye