Nokia Technologies Oy

Shanghai Jiaotong University

Advanced Semiconductor Manufacturing Corporation Limited

Gta Semiconductor Co., Ltd.

Advanced Semiconductor Manufacturing Co. Ltd.

Jianhua Liu

Xueliang Wang

Jinrong Lang

Yaneng Min

Benoist Sebire

Chunli Wu

Jing He

Yang Lu

Hongzhuan Chen

Shuangqi Tang

There is provided an apparatus, said apparatus including circuitry for operating in a first discontinuous reception mode including at least one awake period and at least one sleep period, receiving, during operation in the at least one awake period, a first indication from a network to perform at least one of pausing operation of the first discontinuous reception mode such that the apparatus continues operation in the at least one awake period and disabling operation of the first discontinuous reception mode such that the apparatus continues operation in a second discontinuous reception mode.

Apparatus, method and computer program

An IGBT and a manufacturing method therefor, wherein a target region in the IGBT is doped with first ions; the target region comprises at least one of a P-type substrate (), a P-type well region (), and a P-type source region (); and the diffusion coefficient of the first ions is greater than the diffusion coefficients of boron ions. A PN junction formed by means of the present invention is a gradual junction, thereby improving breakdown voltage, shortening turn-off time, and improving anti-latch capability.

IGBT and manufacturing method therefor

An insulated gate bipolar transistor and a fabrication method therefor, wherein the fabrication method for the insulated gate bipolar transistor comprises the following steps: implanting hydrogen ions, arsenic ions, or nitrogen ions into a substrate from a back surface of the insulated gate bipolar transistor so as to form an n-type heavily doped layer () of a reverse conduction diode, the reverse conduction diode being a reverse conduction diode built into the insulated gate bipolar transistor. The described fabrication method and the obtained insulated gate bipolar transistor from a recombination center in an n+ junction of the reverse conduction diode, thereby accelerating the reverse recovery speed of the built-in reverse conduction diode, shortening the reverse recovery time thereof, and improving the performance of the insulated gate bipolar transistor.

Insulated gate bipolar transistor and fabrication method therefor

A stearoyl amino acid salt having a structural formula of the general formula (I), wherein Ris H or an aromatic base capable of being substituted by one or more substituents, or a Cstraight chain or an alkyl with a branched chain, the substituent being an alcoholic hydroxyl group or a phenolic hydroxyl group; and Ris a Csaturated or unsaturated aliphatic group. Also provided are methods of preparing the stearoyl amino acid salt, and methods of using the stearoyl amino acid salt. Compared to a prototype drug stearoyl amino acid, the stearoyl amino acid salt described herein has excellent physicochemical properties, good stability, high relative bioavailability, a strong drug effect and a high safety factor. It is thus expected to become a candidate for clinical treatment of neurodegenerative diseases and acute brain injury, and a clinical drug for weight loss, thus having broad application prospects. 

Stearoyl amino acid salt and preparation method and application thereof

The present invention provides an EEPROM core structure embedded into BCD process and forming method thereof. The EEPROM core structure embedded into BCD process comprises a selection transistor and a storage transistor connected in series, wherein the selection transistor is an LDNMOS transistor. The present invention may embed the procedure for forming the EEPROM core structure into the BCD process, which is favorable to reduce the complexity of the process.

EEPROM core structure embedded into BCD process and forming method thereof

Growing community of inventors

Shanghai, China

Jianhua Liu