Applied Materials, Inc.

Jianhua Hu

Ming Xi

Fufa Chen

Yin Lin

Frederick C Wu

Li Wu

Yehuda Demayo

The present disclosure pertains to the discovery that TiN films having a thickness of greater than about 400 &angst; and, particularly greater than 1000 &angst;, and a resistivity of less than about 175 &mgr;&OHgr;cm, can be produced by a CVD technique in which a series of TiN layers are deposited to form a desired TiN film thickness. Each layer is deposited employing a CVD deposition/treatment step. During a treatment step, residual halogen (typically chlorine) was removed from the CVD deposited film. Specifically, a TiN film having a thickness of greater than about 400 &angst; was prepared by a multi deposition/treatment step process where individual TiN layers having a thickness of less than 400 &angst; were produced in series to provide a finished TiN layer having a combined desired thickness. Each individual TiN layer was CVD deposited and then treated by exposing the TiN surface to ammonia in an annealing step carried out in an ammonia ambient. The TiN film formed in this manner not only had a resistivity of less than about 175 &mgr;&OHgr;cm, but was substantially free of micro cracks as well, including films having a thickness greater than 1,000 &angst;.

Method for the CVD deposition of a low residual halogen content multi-layered titanium nitride film having a combined thickness greater than 1000 &angst;

The present invention is a method of wafer processing which improves the reliability of an integrated titanium (Ti)/titanium nitride (TiN) CVD film formed from a reaction of titanium tetrachloride (TiCi,) and ammonia (NH,). A Ti film is subject to a treatment of NH,gas to render the Ti film unreactive towards attack by chlorine and hydrogen chloride. A thin seed layer of TiN film is deposited upon the treated Ti film using a thermal TiCl,/NH,reaction. Subsequent TiN film deposition upon the seed layer results in a successful integration of a Ti/TiN film stack for a Ti film thickness up to about 300 &angst;.

Method of performing titanium/titanium nitride integration

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Sunnyvale, CA, United States of America

Jianhua Hu