Intermolecular, Inc.

Western Digital Technologies, Inc.

Other

Tesla, Inc.

Jianhua Hu

Minh Le

Cherngye Hwang

Sandeep Nijhawan

Diane L Brown

Teresa B Sapirman

Tong Ju

Zhigang Xie

Yangsen Kang

Masaya Nishioka

Heng-Kai Hsu

Heng Kai Hsu

The present disclosure generally relates to a storage device comprising soft bias structures having high coercivity and high anisotropy, and a method of forming thereof. The soft bias structures may be formed by moving a wafer in a first direction under a plume of NiFe to deposit a first NiFe layer at a first angle, moving the wafer in a second direction anti-parallel to the first direction to deposit a second NiFe layer at a second angle on the first NiFe layer, and repeating one or more times. The soft bias structures may be formed by rotating a wafer to a first position, depositing a first NiFe layer at a first angle, rotating the wafer to a second position, depositing a second NiFe layer at a second angle on the first NiFe layer, and repeating one or more times. The first and second NiFe layers have different grain structures.

Longitudinal sensor bias structures and method of formation thereof

One embodiment can provide a solar module. The solar module can include one or more moisture-resistant photovoltaic structures. A respective photovoltaic structure can include a base layer, an emitter layer positioned on a first side of the base layer, and a moisture barrier layer positioned on a first side of the emitter layer, thereby reducing the amount of moisture that reaches a junction between the base layer and the emitter layer.

Moisture-resistant solar cells for solar roof tiles

Provided are light emitting diodes (LEDs) and methods of fabricating such LEDs. An LED may include a transparent conductive oxide (TCO) layer having a varying refractive index. For example, the refractive index may be higher at the interface of the TCO layer with an epitaxial stack than on the side of the TCO layer. The refractive index variability allows reducing light intensity losses in the LED. The refractive index variability may be achieved by feeding a substrate through a deposition chamber having a variable concentration of at least one process gas, such as oxygen. Specifically, the concentration of the process gas may be higher at one slit opening than at another slit opening. As the substrate moves through the deposition chamber, the TCO layer is continuously deposited. Due to the concentration variability, the resulting TCO layer may have a variable composition throughout the thickness of the TCO layer.

Variable composition transparent conductive oxide layer and methods of forming thereof

Transparent conductive layers usable as ohmic contacts for III-V semiconductors with work functions between 4.1 and 4.7 eV are formed by annealing layers of transparent oxide with thin (0.1-5nm) layers of conductive metal. When the layers interdiffuse during the annealing, some of the conductive metal atoms remain free to reduce resistivity and others oxidize to reduce optical absorption. Examples of the transparent oxides include indium-tin oxide, zinc oxide, and aluminum zinc oxide with up to 5 wt % Al. Examples of the metals include aluminum and titanium. The work function of the transparent conductive layer can be tuned to match the contacted semiconductor by adjusting the ratio of metal to transparent oxide.

Oxides with thin metallic layers as transparent ohmic contacts for p-type and n-type gallium nitride

Transparent ohmic contacts to p-GaN and other high-work-function (&#x2267;4.2 eV) semiconductors are fabricated from zinc stannate (e.g., ZnSnO). ZnO and SnOmay be sputtered from separate targets and annealed to form the zinc stannate. The Zn:Sn ratio may be tuned over the range between 1:2 and 2:1 to optimize bandgap, work function, conductivity, and transparency for the particular semiconductor and wavelength of interest. Conductivity may be improved by crystallizing the zinc stannate, by doping with up to 5 wt % Al or In, or both.

Zinc stannate ohmic contacts for p-type gallium nitride

The present invention relates to a plurality of light emitting diodes connected in series to elevate the working voltage and to enable the devices to be connected directly to the AC voltage sources. The LED device has five pluralities of series-connected diodes. Four pluralities of series-connected diodes are arranged to at as a rectifier bridge so the fifth plurality of diodes is always forward biased and energized. The light emitting diodes in the device are arranged to accommodate various AC line voltages, diode operating voltages, and diode reverse breakdown voltages. The plurality of diodes was manufactured by first etching epitaxial layer to the insulating substrate to isolate individual diodes, and then use metal lines to interconnect them according to the layout design. The number of die-attach and wire-bonding steps used in the subsequent chip array and lamp manufacturing process is therefore greatly reduced or eliminated. This invention simplifies LED array and lamp process flow, lowers the manufacturing cost, improves product reliability and LED device efficacy.

Growing community of inventors

Palo Alto, CA, United States of America

Jianhua Hu