Lexvu Opto Microelectronics Technology (shanghai) Ltd

Shanghai Jadic Optoelectronics Technology Co., Ltd

Semiconductor Manufacturing International (shanghai) Corporation

Jianhong Mao

Deming Tang

Fengqin Han

Lei Zhang

Zhiwei Wang

Xianyong Pu

Yiqun Chen

Jing Fu

Herb He Huang

Zhongshan Hong

Yanghui Xiang

Shan Huang

Cheng Xu

Wenfen Chang

A photosensitive imaging apparatus and a method of forming such an apparatus are disclosed. The apparatus includes: a first semiconductor substrate, including a photosensitive semiconductor layer including an array of photodetectors; and a second semiconductor substrate, stacked with the first semiconductor substrate and including a pixel-circuitry semiconductor layer including an array of in-pixel amplifier circuitries. Each in-pixel amplifier circuitry includes at least one first pixel MOS transistor. Each first pixel MOS transistor has an active region disposed between the gate layer thereof and the first semiconductor substrate. The photosensitive imaging apparatus allows an effective reduction in noises produced during light reception of the in-pixel amplifier circuitries and an increased light utilization of the photodetectors. In addition, by separating the pixel-circuitry semiconductor layer from the photosensitive semiconductor layer, the apparatus achieves better process compatibility and is conducive to separate design and process optimization of the in-pixel amplifier circuitries and the photodetectors.

Photosensitive imaging apparatus and method of forming same

An apparatus for detecting macromolecules in a biological fluid is discloses which includes a first substrate and a second substrate. The first substrate includes a plurality of sampling apertures, at least some of which have different diameters. The sampling apertures are configured to screen and isolate the macromolecules in the biological fluid. The second substrate is stacked with the first substrate and includes a plurality of detectors vertically corresponding in position to the sampling apertures. Each of the detectors is configured to detect whether one of the macromolecules is present in a corresponding one of the sampling apertures and produce a detection output signal. A method for detecting macromolecules in a biological fluid is also disclosed. The apparatus has high integration and simple manufacturability, while the method is easy to use.

Apparatus and method for detecting and analyzing macromolecules in biological fluid

A display device having a MEMS transmissive light valve and a method for forming the same are provided. The method includes: providing a multilayer semiconductor substrate comprising a bottom semiconductor layer, a middle buried layer and a top semiconductor layer; forming a light guide opening in the top semiconductor layer; forming at least one MOS device in a remaining part of the top semiconductor layer; forming an interconnection layer and an interlayer dielectric layer on the at least one MOS; forming a MEMS transmissive light valve, which is electrically connected to the interconnection layer, on the light guide opening, where the MEMS transmissive light valve is surrounded by the interlayer dielectric layer; forming a transparent backplane on a top surface of the interlayer dielectric layer; and removing the bottom semiconductor layer.

Display device having MEMS transmissive light valve and method for forming the same

The present invention provides a method of fabricating a 3D stacked IC SiP which includes: providing a first semiconductor wafer having a plurality of first dies formed thereon, each having a first wire bond pad and a first dielectric layer, at least a portion of the first wire bond pad is not covered by the first dielectric layer and constitutes an exposed area of the first die; providing a plurality of second dies, each having a second wire bond pad and a second dielectric layer, at least a portion of the second wire bond pad is not covered by the second dielectric layer and constitutes an exposed area of the second die different in size from that of the first die; aligning the second dies with the first dies and bonding the second dielectric layer to the first dielectric layer; plating the first semiconductor wafer bonded with the second dies.

Methods of fabrication and testing of three-dimensional stacked integrated circuit system-in-package

A micro-electro-mechanical system based device for adjusting aperture and a manufacturing method thereof are disclosed. The system includes: an opaque deformable aperture ring, multiple groups of conductive deformable crossbeams and conductive structs; and one or more fixed parts. In each group, each conductive deformable crossbeam corresponds to a conductive struct. The conductive deformable crossbeams and the conductive structs are arranged around the deformable aperture ring and spaced from each other. The conductive deformable crossbeams are suspended in the air, their inner edges are connected with an external edge of the deformable aperture ring, and their external edges are connected with the fixed parts. The conductive structs are connected with the fixed parts and remain stationary. Electrostatic force between the conductive deformable crossbeam and the conductive struct causes the deformable aperture ring to be stretched and rotate, so that area of an inner bore of the deformable aperture ring is changed.

Micro-electro-mechanical system based device for adjusting aperture and manufacturing method thereof

A micro-electro-mechanical system based focusing device and manufacturing method thereof are disclosed. The system includes: a deformable lens, multiple groups of conductive deformable crossbeams and conductive structs; and one or more fixed parts. In each group, each conductive deformable crossbeam corresponds to a conductive struct. The conductive deformable crossbeams and the conductive structs are arranged around the deformable lens and spaced from each other. The conductive deformable crossbeams are suspended in the air, their inner edges are connected with an external edge of the deformable lens and their external edges are connected with the fixed parts. The conductive structs are fixedly connected with the fixed parts and remain stationary. Electrostatic force between the conductive deformable crossbeam and the conductive struct causes the deformable lens to be stretched and rotate, thus, surface curvature and focal length are changed. The device has a small size, low power consumption and low manufacturing cost.

Micro-electro-mechanical system based focusing device and manufacturing method thereof

A panel display device is provided, which includes: a transparent back panel having a first surface and a second surface, where the first surface is adapted for reflecting incident lights from the outside, and the second surface is adapted for transmitting lights from the outside; a backlight source, disposed at one side of the second surface of the transparent back panel, which is adapted for emitting lights to the transparent back panel; a polarized grating, disposed at one side of the first surface of the transparent back panel, which includes a plurality of grating strips with gaps formed between neighboring grating strips, where the polarized grating enables the incident lights from the transparent back panel to be polarized and then pass through the gaps; a semiconductor switch array; and a transmission light valve array. The panel display device of the disclosure increase the utilization efficiency of lights.

Panel display device

A MEMS device and a forming method thereof are provided. The MEMS device includes a semiconductor substrate with a well region formed therein. A source region, a drain region and a channel region are formed in the well region. The source region and the drain region are covered by an isolating layer, and the channel region is covered by a gate dielectric layer. The device further includes a gate electrode layer which is disposed above the gate dielectric layer, with a gap disposed therebetween. The width of the gap corresponds to the width of the channel region. The MEMS can work well at high voltages with less leakage current.

MEMS device and method of forming the same

The present invention relates to a pressure sensor, which may include a first electrode plate, a second electrode plate, a third electrode plate, a fourth electrode plate and a fifth electrode plate, which are successively laminated on a substrate, wherein the first electrode plate, the third electrode plate and the fourth electrode plate are fixed to the substrate, the first electrode plate and the second electrode plate are disposed opposite to each other and have a gap formed therebetween, the second electrode plate is suspended over the first electrode plate to constitute a first capacitor; the second electrode plate and the third electrode plate are disposed opposite to each other and have a gap formed therebetween, to constitute a second capacitor; and the fifth electrode plate is suspended over the fourth electrode plate to constitute a third capacitor, and can move along a direction perpendicular to the substrate.

Pressure sensor, oscillator, ultrasonic wave sensor and measuring method thereof

A display device provided with an MEMS light valve, comprising: a substrate, a fixed grating located on the substrate, an MEMS light valve for controlling the opening and closing of the fixed grating; a guide is disposed on the substrate. The MEMS light valve comprises: a movable grating, a movable electrode and fixed electrodes; the moveable grating is located in the guide and is electrically connected to the guide when contacting the guide; one end of the movable electrode is fixedly connected with the movable grating, and the other end is suspended; and the fixed electrodes and the movable electrode form a capacitor. When a potential difference forms between the fixed electrodes and the movable electrode, the movable electrode drives the movable grating to move in the guide, thereby opening and closing the fixed grating. Therefore, the MEMS light valve sensitivity can be enhanced and reliability is improved.

Display device provided with MEMS light valve and forming method thereof

A micro-electro-mechanical microphone and manufacturing method thereof are provided. The micro-electro-mechanical microphone includes a diaphragm, which is formed on a surface of one side of a semiconductor substrate, exposed to the outside surroundings, and can vibrate freely under the pressure generated by sound waves; an electrode plate with air holes, which is under the diaphragm; an isolation structure for fixing the diaphragm and the electrode plate; an air gap cavity between the diaphragm and the electrode plate, and a back cavity under the electrode plate and in the semiconductor substrate; and a second cavity formed on the surface of the same side of the semiconductor substrate and in an open manner The air gap cavity is connected with the back cavity through the air holes of the electrode plate The back cavity is connected with the second cavity through an air groove formed in the semiconductor substrate.

Method for manufacturing a micro-electro-mechanical microphone

A photosensitive imaging device and a method for forming a semiconductor device are provided. The method includes: providing a first device layer formed on a first substrate, wherein a conductive top bonding pad layer is formed on the first device layer; providing a continuous second device layer formed on a second substrate, wherein a continuous conductive adhesion layer is formed on the continuous second device layer; bonding the first device layer with the second device layer, where the top bonding pad layer on the first device layer is directly connected with the conductive continuous adhesion layer on the continuous second device layer; removing the second substrate; selectively etching the continuous second device and the continuous conductive adhesion layer to form a groove array; and filling up the groove array with an insulation material to form a plurality of second devices. Alignment accuracy may be improved.

Photosensitive imaging device and method for forming semiconductor device

A MEMS inertial sensor and a method for manufacturing the same are provided. The method includes: depositing a first carbon layer on a semiconductor substrate; patterning the first carbon layer to form a fixed anchor bolt, an inertial anchor bolt and a bottom sealing ring; forming a contact plug in the fixed anchor bolt and a contact plug in the inertial anchor bolt; forming a first fixed electrode, an inertial electrode and a connection electrode on the first carbon layer, where the first fixed electrode and the inertial electrode constitute a capacitor; forming a second carbon layer on the first fixed electrode and the inertial electrode; and forming a sealing cap layer on the second carbon layer and the top sealing ring. Under an inertial force, only the inertial electrode may move, the fixed electrode will almost not move or vibrate, which improves the accuracy of the MEMS inertial sensor.

MEMS inertial sensor and method for manufacturing the same

A crystal oscillator and manufacturing method thereof are provided. The crystal oscillator includes: a semiconductor substrate; an interlayer dielectric layer located on the surface of the semiconductor substrate, an excitation plate and a positive electrode plug and a negative electrode plug being formed inside the interlayer dielectric layer, and the positive electrode plug and the negative electrode plug being located at the both sides of the excitation plate; a bottom cavity on top of the excitation plate, located between the positive electrode plug and the negative electrode plug; a vibrating crystal located on the surface of the interlayer dielectric layer, across the bottom cavity and connected with the positive electrode plug and the negative plug, wherein the vibrating crystal connects the positive electrode plug and the negative electrode plug at its both sides and besides the other both sides are the free ends and do not contact with the surrounding objects; an isolating layer located on top of the interlayer dielectric layer, a gap between the isolating layer and the vibrating crystal thus forming a top cavity; a covering layer formed on the surface of the isolating layer. The crystal oscillator is manufactured based on Complementary Metal-Oxide-Semiconductor Transistor (CMOS) technology, and can be integrated into the semiconductor chip easily and can meet the requirement for the miniature components.

MEMS oscillator and manufacturing method thereof

A method for manufacturing a micro-electro-mechanical system (MEMS) device is provided. The method comprises: providing a semiconductor substrate, the semiconductor substrate having a metal interconnection structure () formed therein; forming a first sacrificial layer () on the surface of the semiconductor substrate, the material of the first sacrificial layer is amorphous carbon; etching the first sacrificial layer to form a first recess (); covering and forming a first dielectric layer () on the surface of the first sacrificial layer; thinning the first dielectric layer by a chemical mechanical polishing (CMP) process, until exposing the first sacrificial layer; forming a micromechanical structure layer () on the surface of the first sacrificial layer and exposing the first sacrificial layer, wherein a part of the micromechanical structure layer is connected to the first dielectric layer. The method avoids polishing the amorphous carbon, shortens the period of production, and improves the production efficiency.

Growing community of inventors

Shanghai, China

Jianhong Mao